MATERIALS OF THE KONSTANTINOVSKAYA CULTURE FROM THE TEMERNITSKOYE FORTIFIED SETTLEMENT

В 2017-2018 гг. на территории Темерницкого городища в центральной части г. Ростова-на-Дону было обнаружено поселение энеолитического времени (константиновская культура). В статье отдельно рассмотрены эти материалы, представленные в подавляющем большинстве керамикой и кремневыми изделиями (рис. 2-4). Часть их находилась в переотложенном состоянии - в разрушенном слое или хозяйственных ямах первых веков н. э. Оставшаяся половина найдена в нижних практически стерильных слоях предматерика и в заполнении двух выявленных рвов энеолитического времени (рис. 1). Единственный сохранившийся участок культурного слоя исследован в западной части раскопа. Именно с этого участка происходят два шила, обогащенная медная руда и несколько фрагментов неорнаментированных стенок сосудов с примесью раковины. Находки из металла (2 шила, плоская капля металла, медная руда) проанализированы на микрофлуоресцентном рентгеновском спектрометре (рис. 5). По совокупности технологических, морфологических и орнаментальных признаков керамики энеолитический слой Темерницкого городища можно атрибутировать ранним этапом константиновской культуры Нижнего Подонья. Помимо эпонимного поселения наиболее близки к найденным материалы нижнего горизонта Ливенцовского поселения и слой 6 поселения Раздорское I. К исследованным материалам энеолитического времени Темерницкого городища хронологически близким является погребение, обнаруженное на территории грунтового некрополя Темерницкого городища. In 2017-2018 an Eneolithic settlement (attributed to the Konstantinovskaya culture) was discovered in the territory of the Temernitskoye fortified site in the center of Rostov-on-the-Don. The paper considers these materials represented mostly_by ceramics and flint items (Fig. 2-4). Some of them were redeposited and found in a disturbed layer or household pits dating to first centuries AD. The remainder items were found in bottom and practically sterile layers over the virgin soil and in the fill of two identified Eneolithic ditches (Fig. 1). The only surviving section of the cultural layer was examined in the western part of the excavation area. It yielded two awls, enriched copper ore and several undecorated walls of shell-tempered vessels. Metal finds (two awls, a flat metal drop, copper ore) were analyzed by an X-ray microfluorescence spectrometer (Fig. 5). Based on technological, morphological and decorative characteristics of the ceramics, the Eneolithic layer of the Temernitskoye fortified settlement can be attributed to the early stage of the Konstantinovskaya culture of the Lower Don region. Besides the eponymic settlement, the materials retrieved from the lower horizon at the Liventsovka settlement and layer 6 from Razdorskaya I are the closest to the finds. A burial found in the necropolis of the Temernitskoye fortified settlement is chronologically close to the examined Eneolithic materials found at the Temernitskoye settlement.

Comparison of DFN Modelled Microfracture Systems with Petrophysical Data in Excavation Damaged Zone

Physical and petrographic properties of drill core specimens were determined as a part of investigations into excavation damage in the dedicated study area in the ONKALO® research facility in Olkiluoto, Western Finland. Microfractures in 16 specimens from two drillholes were analysed and used as a basis for fractal geometry-based discrete fracture network (DFN) modelling. It was concluded that the difference in resistivity between pegmatoid granite (PGR) and veined gneiss (VGN) specimens of similar porosity was likely due to differences in the types of microfractures. This hypothesis was confirmed from microfracture analysis and simulation: fractures in gneiss were short and mostly in one preferred orientation, whereas the fractures in granite were longer and had two preferred orientations. This may be due to microstructure differences of the rock types or could suggests that gneiss and granite may suffer different types of excavation damage. No dependencies on depth from the excavated surface were observed in the geometric parameters of the microfractures. This suggests that the excavation damaged zone cannot be identified based on the changes in the parameters of the microfracture networks, and that the disturbed layer observed by geophysical methods may be caused by macro-scale fractures.

Formation of radiation-disturbed layer in Al/SiO2/n-Si structures irradiated by helium ions with energy 5 MeV

This paper focuses on researching the change in the volt-farad characteristic of the Al/SiO2/n-Si structure irradiated by helium ions with the energy of 5 MeV in different frequencies of 1 kHz; 10 kHz; 100 kHz and 1 MHz. The voltage dependence of the capacitance and the frequency dependence of the dissolution angle are measured by LCR Agilent E4980A and Agilent 4285A meter. The complex electrical module’s hodograph of irradiated structure shows that there is a formation of quasi-continuous radiation-disturbed layer at fluence 1012 cm-2 with U < -7 V and at 1013 cm-2 with U < -20 V, which enhances the speed of charged particles, thereby increasing the reverse current in the irradiated structure.

On the relationship of proton irradiation and heat treatment of monocrystalline silicon with its structure

The method of two-crystal X-ray diffractometry is used to control the quality and perfection of monocrystalline silicon obtained by implantation of hydrogen ions and subsequent thermal annealing, which is used in a number of semiconductor technologies. The principal feature of this approach is the ability to quickly obtain reliable experimental results, which was confirmed in this paper by the use of X-ray topography. The presented data provide information on the state of the disturbed layer of silicon crystals of n-type conductivity (ρ = 100 Om ⋅ cm) by orientation (111), 2 mm thick, implanted by protons with energy E = 200, 300, 100 + 200 + 300 keV, dose D = 2 ⋅ 1016cm-2 and subjected to subsequent thermal treatment in the temperature range T from 100 to 900 °С. We have established a non-monotonic dependence of the integral characteristics of the disturbed layer, namely the average effective thickness Leff and the average relative deformation ∆а/а, on annealing temperature, with the maximum level of distortion in the field of temperature ∼300 °С, using the method of integral characteristics. Obtained data allowed to assess the general condition of disturbed layer during thermal treatment.

Aging Processes in Films of Iron-Yttrium Garnet Implanted by Boron Ions

Based on the results of X-ray structural analysis, changes in the crystalline structure that occurred during 15 years in surface layers of epitaxial films of iron-yttrium garnet implanted by B+ ions were studied. The processes that occur during the B+ ion implantation of in ferrite-garnet films, and the processes that accompany the low-temperature aging of ion-implanted films are considered. Strain profiles were determined from the experimental rocking curves, obtained immediately after ion implantation and after 15 years. It was found that the value of relative maximum deformation of surface layers decreases at constant thickness of the disturbed layer.

Об изменении реальной структуры кристаллов кремния, имплантированных ионами водорода, при их отжиге по данным трехкристальной рентгеновской дифрактометрии

In this paper, we present the results of a three-crystal X-ray diffractometry (XRD) study of the state of a disturbed layer formed in silicon crystals by implantation of hydrogen ions with energies of 100 + 200 + 300 keV and a total dose of 2 × 10^16 cm^–2 during the subsequent heat exposure in the temperature range from 200 to 1100°C. Here, X-ray studies were performed in the three-crystal XRD scheme when the sample under consideration operates as a second stationary crystal with various fixed angular detuning α from the Bragg position while the third (perfect) crystal-analyzer sweeps the angular distribution of radiation diffracted by the second crystal. Based on a comparison of the shape of diffraction and diffuse maxima for the samples under study, a qualitative conclusion about a significant transformation of radiation defects at post-implantation annealing was derived.

Investigating a Rock Art Site in Paraná State, South of Brazil

Jaguariaíva 1 is a sandstone rockshelter located in Jaguariaíva, Paraná State, Brazil, with rock art on the surface of the walls and ceiling. A stratigraphic analysis of the soil within the shelter showed six occupational layers and a superficial disturbed layer with evidence from the end of the 19th century. The establishment of a rock-art chronology became possible using fallen painted rock sections incorporated into three sedimentary levels underlying this rock shelter. These show superimpositions of several pictures of differently sized animals, such as deer, and lattice motifs, which are generally associated with the Planalto rock art tradition. The chronological study was performed based on radiocarbon (14C) analysis of charcoal collected from six excavated subsurface archaeological contexts. The two oldest layers, associated with hunters and gatherers of the Umbu tradition, were dated to 7680–7516 cal BP and 6913–6656 cal BP. There are four occupational layers from ceramists and farmers related to the south Jê linguistic family, and linked to the Itararé-Taquara archaeological tradition: layer 3 linked to the oldest of such occupation, dated to 3058–2796 cal BP, followed by layer 4, dated to 2080–1701 cal BP. Layers 5 and 6, dated to 1995–1526 cal BP and 540–152 cal BP, respectively.

Structure of Magnetically Ordered Si:Mn

The structure studies of single crystalline silicon implanted at 340 K or 610 K with Mn+ ions (Si:Mn) and subsequently processed under atmospheric and enhanced hydrostatic pressure at up to 1270 K are reported. The defect structure was determined by an analysis of X-ray diffuse scattering around the 004 reciprocal lattice point and by electron microscopy. High resolution X-ray diffraction techniques based on the conventional source of radiation were used for this purpose. The crystal structure of Si:Mn and the Si1-xMnx precipitates in the implantation – disturbed layer were studied by synchrotron radiation diffraction in the grazing incidence geometry. Processing of Si:Mn results in crystallization of amorphous Si within the buried implantation – disturbed layer and in formation of Mn4Si7 precipitates. Structural changes are dependent both on temperature of the Si substrate at implantation and on processing parameters.