Physical-topology modeling of silicon/gallium arsenide Schottky transistor of submicron technology LSI

In this paper described researched essentials and physical mechanisms of MESFET on epitaxy layers of GaAs with monocrystalline silicon wafer. Conducted computer modeling of MESFET with p-channel: distributions of potential, volumetric charge, current in channel and its characteristics. Based on conducted modeling discovered new effect in MESFET, shielding of volumetric charge, which sufficiently influences on current distribution in channel.

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Photosensitivity of MESFETs on Epitaxy Layers of GaAs with Monocrystalline Silicon Wafer

Фізика і хімія твердого тіла ◽

10.15330/pcss.20.4.453-456 ◽

2019 ◽

Vol 20 (4) ◽

pp. 453-456

Author(s):

S.P. Novosyadliy ◽

V.M. Gryga ◽

A.V. Pavlyshyn ◽

V.M. Lukovkin

Keyword(s):

Absorption Spectrum ◽

Silicon Wafer ◽

Contact Layer ◽

Monocrystalline Silicon ◽

Physical Mechanisms ◽

Deep Centers ◽

Dipole Layer ◽

Two Factors ◽

Source Current ◽

Si Wafer

In this paper described researched essentials and physical mechanisms which determine photosensitivity of MESFET on epitaxy layers of GaAs with monocrystalline silicon wafer under their illumination in impure zone absorption spectrum. Conducted experiments showed that source current changing with the type of deep centers, change of value is determined by two factors: change width of volumetric charge barrier contact layer and width of dipole layer on border section of active heterojunction layer of Si-wafer.

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Experimental investigation into polishing of monocrystalline silicon wafer using double-disc chemical assisted magnetorheological finishing process

Proceedings of the Institution of Mechanical Engineers Part C Journal of Mechanical Engineering Science ◽

10.1177/0954406220983849 ◽

2021 ◽

pp. 095440622098384

Author(s):

Mayank Srivastava ◽

Pulak M Pandey

Keyword(s):

Surface Roughness ◽

Silicon Wafer ◽

Flow Rate ◽

Silicon Wafers ◽

Monocrystalline Silicon ◽

Slurry Flow ◽

Magnetorheological Finishing ◽

Finishing Process ◽

Process Factors ◽

Slurry Flow Rate

In the present work, a novel hybrid finishing process that combines the two preferred methods in industries, namely, chemical-mechanical polishing (CMP) and magneto-rheological finishing (MRF), has been used to polish monocrystalline silicon wafers. The experiments were carried out on an indigenously developed double-disc chemical assisted magnetorheological finishing (DDCAMRF) experimental setup. The central composite design (CCD) was used to plan the experiments in order to estimate the effect of various process factors, namely polishing speed, slurry flow rate, percentage CIP concentration, and working gap on the surface roughness ([Formula: see text]) by DDCAMRF process. The analysis of variance was carried out to determine and analyze the contribution of significant factors affecting the surface roughness of polished silicon wafer. The statistical investigation revealed that percentage CIP concentration with a contribution of 30.6% has the maximum influence on the process performance followed by working gap (21.4%), slurry flow rate (14.4%), and polishing speed (1.65%). The surface roughness of polished silicon wafers was measured by the 3 D optical profilometer. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were carried out to understand the surface morphology of polished silicon wafer. It was found that the surface roughness of silicon wafer improved with the increase in polishing speed and slurry flow rate, whereas it was deteriorated with the increase in percentage CIP concentration and working gap.

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Locally-enhanced light scattering by a monocrystalline silicon wafer

AIP Advances ◽

10.1063/1.5020181 ◽

2018 ◽

Vol 8 (3) ◽

pp. 035007

Author(s):

Li Ma ◽

Pan Zhang ◽

Zhen-Hua Li ◽

Chun-Xiang Liu ◽

Xing Li ◽

...

Keyword(s):

Light Scattering ◽

Silicon Wafer ◽

Monocrystalline Silicon

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Texturization of as-cut p-type monocrystalline silicon wafer using different wet chemical solutions

Applied Physics A ◽

10.1007/s00339-018-1818-8 ◽

2018 ◽

Vol 124 (6) ◽

Cited By ~ 5

Author(s):

Galib Hashmi ◽

Muhammad Hasanuzzaman ◽

Mohammad Khairul Basher ◽

Mahbubul Hoq ◽

Md. Habibur Rahman

Keyword(s):

Silicon Wafer ◽

Monocrystalline Silicon ◽

Chemical Solutions ◽

Wet Chemical ◽

P Type

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Key technique for texturing a uniform pyramid structure with a layer of silicon nitride on monocrystalline silicon wafer

Applied Surface Science ◽

10.1016/j.apsusc.2012.12.001 ◽

2013 ◽

Vol 266 ◽

pp. 245-249 ◽

Cited By ~ 16

Author(s):

Bohr-Ran Huang ◽

Ying-Kan Yang ◽

Wen-Luh Yang

Keyword(s):

Silicon Nitride ◽

Silicon Wafer ◽

Monocrystalline Silicon ◽

Pyramid Structure

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Comparison of the Electrical Properties of PERC Approach Applied to Monocrystalline and Multicrystalline Silicon Solar Cells

International Journal of Photoenergy ◽

10.1155/2016/8982376 ◽

2016 ◽

Vol 2016 ◽

pp. 1-6 ◽

Cited By ~ 5

Author(s):

Enyu Wang ◽

He Wang ◽

Hong Yang

Keyword(s):

Solar Cells ◽

Silicon Wafer ◽

Crystalline Silicon ◽

Cost Effective ◽

Monocrystalline Silicon ◽

Multicrystalline Silicon ◽

Silicon Solar Cells ◽

Next Generation ◽

Crystalline Silicon Solar Cells ◽

Commercial Applications

At present, the improvement in performance and the reduction of cost for crystalline silicon solar cells are a key for photovoltaic industry. Passivated emitter and rear cells are the most promising technology for next-generation commercial solar cells. The efficiency gains of passivated emitter and rear cells obtained on monocrystalline silicon wafer and multicrystalline silicon wafer are different. People are puzzled as to how to develop next-generation industrial cells. In this paper, both monocrystalline and multicrystalline silicon solar cells for commercial applications with passivated emitter and rear cells structure were fabricated by using cost-effective process. It was found that passivated emitter and rear cells are more effective for monocrystalline silicon solar cells than for multicrystalline silicon solar cells. This study gives some hints about the industrial-scale mass production of passivated emitter and rear cells process.

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