scholarly journals Photosensitivity of MESFETs on Epitaxy Layers of GaAs with Monocrystalline Silicon Wafer

2019 ◽  
Vol 20 (4) ◽  
pp. 453-456
Author(s):  
S.P. Novosyadliy ◽  
V.M. Gryga ◽  
A.V. Pavlyshyn ◽  
V.M. Lukovkin
Keyword(s):  
Absorption Spectrum ◽  
Silicon Wafer ◽  
Contact Layer ◽  
Monocrystalline Silicon ◽  
Physical Mechanisms ◽  
Deep Centers ◽  
Dipole Layer ◽  
Two Factors ◽  
Source Current ◽  
Si Wafer

In this paper described researched essentials and physical mechanisms which determine photosensitivity of MESFET on epitaxy layers of GaAs with monocrystalline silicon wafer under their illumination in impure zone absorption spectrum. Conducted experiments showed that source current changing with the type of deep centers, change of value is determined by two factors: change width of volumetric charge barrier contact layer and width of dipole layer on border section of active heterojunction layer of Si-wafer.

scholarly journals Physical-topology modeling of silicon/gallium arsenide Schottky transistor of submicron technology LSI

2020 ◽  
Vol 21 (2) ◽  
pp. 361-364
Author(s):  
S. P. Novosyadliy ◽  
V. M. Lukovkin ◽  
R. Melnyk ◽  
A. V. Pavlyshyn
Keyword(s):  
Gallium Arsenide ◽  
Computer Modeling ◽  
Silicon Wafer ◽  
Current Distribution ◽  
Monocrystalline Silicon ◽  
Physical Mechanisms ◽  
Charge Current

In this paper described researched essentials and physical mechanisms of MESFET on epitaxy layers of GaAs with monocrystalline silicon wafer. Conducted computer modeling of MESFET with p-channel: distributions of potential, volumetric charge, current in channel and its characteristics. Based on conducted modeling discovered new effect in MESFET, shielding of volumetric charge, which sufficiently influences on current distribution in channel.

Experimental investigation into polishing of monocrystalline silicon wafer using double-disc chemical assisted magnetorheological finishing process

2021 ◽  
pp. 095440622098384
Author(s):  
Mayank Srivastava ◽  
Pulak M Pandey
Keyword(s):  
Surface Roughness ◽  
Silicon Wafer ◽  
Flow Rate ◽  
Silicon Wafers ◽  
Monocrystalline Silicon ◽  
Slurry Flow ◽  
Magnetorheological Finishing ◽  
Finishing Process ◽  
Process Factors ◽  
Slurry Flow Rate

In the present work, a novel hybrid finishing process that combines the two preferred methods in industries, namely, chemical-mechanical polishing (CMP) and magneto-rheological finishing (MRF), has been used to polish monocrystalline silicon wafers. The experiments were carried out on an indigenously developed double-disc chemical assisted magnetorheological finishing (DDCAMRF) experimental setup. The central composite design (CCD) was used to plan the experiments in order to estimate the effect of various process factors, namely polishing speed, slurry flow rate, percentage CIP concentration, and working gap on the surface roughness ([Formula: see text]) by DDCAMRF process. The analysis of variance was carried out to determine and analyze the contribution of significant factors affecting the surface roughness of polished silicon wafer. The statistical investigation revealed that percentage CIP concentration with a contribution of 30.6% has the maximum influence on the process performance followed by working gap (21.4%), slurry flow rate (14.4%), and polishing speed (1.65%). The surface roughness of polished silicon wafers was measured by the 3 D optical profilometer. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were carried out to understand the surface morphology of polished silicon wafer. It was found that the surface roughness of silicon wafer improved with the increase in polishing speed and slurry flow rate, whereas it was deteriorated with the increase in percentage CIP concentration and working gap.

scholarly journals Locally-enhanced light scattering by a monocrystalline silicon wafer

AIP Advances ◽  
2018 ◽  
Vol 8 (3) ◽  
pp. 035007
Author(s):  
Li Ma ◽  
Pan Zhang ◽  
Zhen-Hua Li ◽  
Chun-Xiang Liu ◽  
Xing Li ◽  
...  
Keyword(s):  
Light Scattering ◽  
Silicon Wafer ◽  
Monocrystalline Silicon

Texturization of as-cut p-type monocrystalline silicon wafer using different wet chemical solutions

2018 ◽  
Vol 124 (6) ◽  
Author(s):  
Galib Hashmi ◽  
Muhammad Hasanuzzaman ◽  
Mohammad Khairul Basher ◽  
Mahbubul Hoq ◽  
Md. Habibur Rahman
Keyword(s):  
Silicon Wafer ◽  
Monocrystalline Silicon ◽  
Chemical Solutions ◽  
Wet Chemical ◽  
P Type

scholarly journals Comparison of the Electrical Properties of PERC Approach Applied to Monocrystalline and Multicrystalline Silicon Solar Cells

2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
Enyu Wang ◽  
He Wang ◽  
Hong Yang
Keyword(s):  
Solar Cells ◽  
Silicon Wafer ◽  
Crystalline Silicon ◽  
Cost Effective ◽  
Monocrystalline Silicon ◽  
Multicrystalline Silicon ◽  
Silicon Solar Cells ◽  
Next Generation ◽  
Crystalline Silicon Solar Cells ◽  
Commercial Applications

At present, the improvement in performance and the reduction of cost for crystalline silicon solar cells are a key for photovoltaic industry. Passivated emitter and rear cells are the most promising technology for next-generation commercial solar cells. The efficiency gains of passivated emitter and rear cells obtained on monocrystalline silicon wafer and multicrystalline silicon wafer are different. People are puzzled as to how to develop next-generation industrial cells. In this paper, both monocrystalline and multicrystalline silicon solar cells for commercial applications with passivated emitter and rear cells structure were fabricated by using cost-effective process. It was found that passivated emitter and rear cells are more effective for monocrystalline silicon solar cells than for multicrystalline silicon solar cells. This study gives some hints about the industrial-scale mass production of passivated emitter and rear cells process.

Nano-finishing of the monocrystalline silicon wafer using magnetic abrasive finishing process

2019 ◽  
Vol 58 (13) ◽  
pp. 3447 ◽  
Author(s):  
Mohammad Mosavat ◽  
Abdolreza Rahimi ◽  
Mohammad Javad Eshraghi ◽  
Saeideh Karami
Keyword(s):  
Silicon Wafer ◽  
Monocrystalline Silicon ◽  
Magnetic Abrasive Finishing ◽  
Finishing Process ◽  
Abrasive Finishing

Influence of random pyramid surface texture on silver screen-printed contact formation for monocrystalline silicon wafer solar cells

2015 ◽  
Vol 132 ◽  
pp. 589-596 ◽  
Author(s):  
Ankit Khanna ◽  
Prabir K. Basu ◽  
Aleksander Filipovic ◽  
Vinodh Shanmugam ◽  
Christian Schmiga ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Wafer ◽  
Surface Texture ◽  
Monocrystalline Silicon ◽  
Contact Formation ◽  
Screen Printed

scholarly journals Comparative Study on Electronic, Emission, Spontaneous Property of Porous Silicon in Different Solvents

2014 ◽  
Vol 2014 ◽  
pp. 1-14 ◽  
Author(s):  
M. Naziruddin Khan ◽  
M. A. Majeed Khan ◽  
A. S. Al Dwayyan ◽  
J. Puzon Labis
Keyword(s):  
Porous Silicon ◽  
Silicon Wafer ◽  
Wafer Surface ◽  
Etching Technique ◽  
Solvent Influence ◽  
Cross Section Area ◽  
Section Area ◽  
Simple Chemical ◽  
Crystalline Nature ◽  
Si Wafer

Luminescent porous silicon (Psi) fabricated by simple chemical etching technique in different organic solvents was studied. By quantifying the silicon wafer piece, optical properties of the Psi in solutions were investigated. Observation shows that no photoluminescence light of Psi in all solvents is emitted. Morphology of Psi in different solvents indicates that the structure and distribution of Psi are differently observed. Particles are uniformly dispersive with the sizes around more or less 5–8 nm. The crystallographic plane and high crystalline nature of Psi is observed by selected area diffraction (SED) and XRD. Electronic properties of Psi in solutions are influenced due to the variation of quantity of wafer and nature of solvent. Influence in band gaps of Psi calculated by Tauc’s method is obtained due to change of absorption edge of Psi in solvents. PL intensities are observed to be depending on quantity of silicon wafer, etched cross-section area on wafer surface. Effects on emission peaks and bands of Psi under temperature annealing are observed. The spontaneous signals of Psi measured under high power Pico second laser 355 nm source are significant, influenced by the nature of solvent, pumped energy, and quantity of Si wafer piece used in etching process.

scholarly journals Growth and Self-Assembly of Silicon–Silicon Carbide Nanoparticles into Hybrid Worm-Like Nanostructures at the Silicon Wafer Surface

Nanomaterials ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 954 ◽  
Author(s):  
Manuel Perez-Guzman ◽  
Rebeca Ortega-Amaya ◽  
Yasuhiro Matsumoto ◽  
Andres Espinoza-Rivas ◽  
Juan Morales-Corona ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Silicon Wafer ◽  
Self Assembly ◽  
Silicon Nanoparticles ◽  
Hybrid Nanostructures ◽  
Wafer Surface ◽  
Silicon Carbide Nanoparticles ◽  
Silicon Based ◽  
Silicon Silicon ◽  
Si Wafer

This work describes the growth of silicon–silicon carbide nanoparticles (Si–SiC) and their self-assembly into worm-like 1D hybrid nanostructures at the interface of graphene oxide/silicon wafer (GO/Si) under Ar atmosphere at 1000 °C. Depending on GO film thickness, spread silicon nanoparticles apparently develop on GO layers, or GO-embedded Si–SiC nanoparticles self-assembled into some-micrometers-long worm-like nanowires. It was found that the nanoarrays show that carbon–silicon-based nanowires (CSNW) are standing on the Si wafer. It was assumed that Si nanoparticles originated from melted Si at the Si wafer surface and GO-induced nucleation. Additionally, a mechanism for the formation of CSNW is proposed.

Sign in / Sign up

Export Citation Format

Share Document