Energy Harvesting from Non-Stationary Vibrations Using a Low-Threshold Voltage-Boost Rectifier Circuit

2021 ◽  
Vol 141 (7) ◽  
pp. 228-232
Author(s):  
Yukiya Tohyama ◽  
Hiroaki Honma ◽  
Hidehiko Sekiya ◽  
Hiroshi Toshiyoshi ◽  
Daisuke Yamane
2019 ◽  
Vol 28 (03) ◽  
pp. 1950048 ◽  
Author(s):  
Mohamed Mokhlès Mnif ◽  
Hassene Mnif ◽  
Mourad Loulou

The energy-harvesting radio frequency (RF) can be an attractive alternative energy capable of replacing all or some of the board batteries. The RF waves are present in several high frequencies ([Formula: see text] GHz) and at low power (a few [Formula: see text]W). An energy-harvesting circuit designed must provide 1[Formula: see text]V voltage at minimum that is able to operate an actuator or a sensor. The RF-DC rectifier is the main component of an energy-harvesting circuit. This paper presents a new design RF-DC rectifier circuit using the MOSFET transistors, the capacitors and the inductors. Our proposed circuit is a combination of an Inductor–Capacitor–Inductor–Capacitor (LCLC) serie-parallel resonant tank (SPRT) and rectifier cascade using the Dynamic threshold Voltage Cancellation (DVC) and the technique of the Internal threshold Voltage Cancellation (IVC). Our proposed circuit operates in dual frequencies [Formula: see text][Formula: see text]GHz and [Formula: see text][Formula: see text]GHz with a low input power [Formula: see text][Formula: see text][Formula: see text]W ([Formula: see text][Formula: see text]dbm) and [Formula: see text][Formula: see text][Formula: see text]W ([Formula: see text][Formula: see text]dbm), respectively. This circuit gives a Power Conversion Efficiency (PCE) of 56.9% and an output voltage [Formula: see text][Formula: see text]V for the frequency 2.543[Formula: see text]GHz and a PCE of 62.6% and an output voltage [Formula: see text][Formula: see text]V for the frequency 4[Formula: see text]GHz. The pre-layout simulations were performed using the Advanced Design System (ADS) and the technology used is CMOS 0.18[Formula: see text][Formula: see text]m from TSMC. The simulations were performed on the proposed circuit composed by three stages.


2019 ◽  
Vol 1407 ◽  
pp. 012101
Author(s):  
Y Tohyama ◽  
H Honma ◽  
N Ishihara ◽  
H Sekiya ◽  
H Toshiyoshi ◽  
...  

Author(s):  
A. Razavieh ◽  
Y. Chen ◽  
T. Ethirajan ◽  
M. Gu ◽  
S. Cimino ◽  
...  

Author(s):  
Benjamin King ◽  
Andrew J. Daszczynski ◽  
Nicole A. Rice ◽  
Alexander J. Peltekoff ◽  
Nathan J. Yutronkie ◽  
...  

Author(s):  
Cheng Jiang ◽  
Xiaokang Wu ◽  
Bin Wei ◽  
Ziyue Li ◽  
Qian Yang ◽  
...  

2018 ◽  
Vol 59 (4) ◽  
pp. 745-751 ◽  
Author(s):  
Yanping Zhang ◽  
Liyan Zhang ◽  
Lisheng Cheng ◽  
Yongxin Qin ◽  
Yi Li ◽  
...  

With the advent of modern wireless communication technology and increasing requirement of high speed network, network life-time is becoming a major area of concern. The need of network power management is gaining attention with the high data network in place and is making a paradigm shift towards green communication. Hence embedding the RF energy harvesting (EH) capability in a wireless network is becoming inevitable. To make RF EH a reality a high frequency rectifier is indeed indispensable along with other circuits in the system. The RF energy needs to be harvested from the available sources in the ambience. It is also seen that the current generation of RF sources radiates at a very low signal power. So, to successfully convert and store this energy, the rectifier must not only be able to provide a sufficiently higher percentage conversion ratio (PCE) but also be able to cater it at a lower range of signal power. This paper presents the design and analysis of a simplified 3-transistor high frequency rectifier. A threshold voltage compensation technique is also incorporated and it achieves a PCE upto 85% at -2dBm in its single stage implementation. This is observed to be one of the highest in-class efficiency as compared to recently reported designs. From the frequency response it is seen to exhibit wide band performance spanning almost all popular wireless bands. The dynamic power dissipation (DPD) is calculated to be 6.25pW at -2dB, whereas the leakage power (LP) is observed to be zero.


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