scholarly journals Atomic-scale Authentication with Resonant Tunneling Diodes

MRS Advances ◽  
2016 ◽  
Vol 1 (22) ◽  
pp. 1625-1629
Author(s):  
J. Roberts ◽  
I. E. Bagci ◽  
M. A. M. Zawawi ◽  
J. Sexton ◽  
N. Hulbert ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Confinement ◽  
Resonant Tunneling ◽  
Room Temperature ◽  
Atomic Scale ◽  
Resonant Tunneling Diodes ◽  
Physical Unclonable Functions ◽  
Tunneling Diodes ◽  
The Individual

ABSTRACTThe room temperature electronic characteristics of resonant tunneling diodes (RTDs) containing AlAs/InGaAs quantum wells are studied. Differences in the peak current and voltages, associated with device-to-device variations in the structure and width of the quantum well are analyzed. A method to use these differences between devices is introduced and shown to uniquely identify each of the individual devices under test. This investigation shows that quantum confinement in RTDs allows them to operate as physical unclonable functions.

Asymmetric quantum-well structures for AlGaN/GaN/AlGaN resonant tunneling diodes

2016 ◽  
Vol 119 (16) ◽  
pp. 164501 ◽  
Author(s):  
Lin'an Yang ◽  
Yue Li ◽  
Ying Wang ◽  
Shengrui Xu ◽  
Yue Hao
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Quantum Well Structures ◽  
Tunneling Diodes ◽  
Asymmetric Quantum

Growth and characterization of CaF2/Ge/CaF2/Si(111) quantum dots for resonant tunneling diodes operating at room temperature

2002 ◽  
Vol 81 (3) ◽  
pp. 499-501 ◽  
Author(s):  
A. I. Yakimov ◽  
A. S. Derjabin ◽  
L. V. Sokolov ◽  
O. P. Pchelyakov ◽  
A. V. Dvurechenskii ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Resonant Tunneling ◽  
Room Temperature ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes

Factors reducing the cut-off frequency of resonant tunneling diodes

2012 ◽  
Vol 4 (6) ◽  
pp. 605-611
Author(s):  
Nikolay Alkeev ◽  
Stanislav Averin ◽  
Aleksey Dorofeev ◽  
Nadezda Gladysheva
Keyword(s):  
Quantum Well ◽  
Equivalent Circuit ◽  
Delay Time ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Electron States ◽  
Tunneling Diodes ◽  
Active Layers ◽  
In Series ◽  
Additional Resistance

The impedance dependence of resonant tunneling diodes (RTDs) based on the GaAs/AlAs heterosystem is investigated in the range of 0.1–40 GHz. The analysis shows that the impedance of about 90% of unbiased RTDs is well described by an equivalent circuit (EC) consisting of parallel-connected resistance and capacitance and an additional resistance connected in series with this parallel combination. When a bias voltage is applied to these RTDs, one needs a “quantum” inductance LQ to describe the impedance behavior. We find the value of LQ and calculate the delay time of electrons in the quantum well (QW) of an RTD. The impedance of the rest 10% of the RTDs is well described by an EC that takes into account the recharge of localized electron states at the heterointerfaces of the active layers. Expressions for the cut-off frequencies that take into account the delay of electrons in the QW and the localized electron states at the heterointerfaces are derived. It is shown that the delay of electrons in the QW and localized electron states at the heterointerfaces may significantly reduce the cut-off frequency of RTDs.

SPIN FILTERING IN MAGNETIC HETEROSTRUCTURES

2001 ◽  
Vol 15 (24n25) ◽  
pp. 3247-3252 ◽  
Author(s):  
D. O. Demchenko ◽  
A. N. Chantis ◽  
A. G. Petukhov
Keyword(s):  
Solid State ◽  
Quantum Wells ◽  
Resonant Tunneling ◽  
Magnetic Films ◽  
Resonant Tunneling Diodes ◽  
Exchange Splitting ◽  
Double Barrier ◽  
Molecular Beam Epitaxial ◽  
Tunneling Diodes ◽  
Spin Filtering

Several techniques were proposed to achieve solid state spin filtering such as magnetic tunnel junctions comprised of half-metallic compounds or solid state Stern-Gerlach apparatus. Another alternative consists in using spin-dependent resonant tunneling through magnetically active quantum wells. Recent advances in molecular beam epitaxial growth made it possible to fabricate exotic heterostructures comprised of magnetic films or buried layers (ErAs, GaxMn1-xAs) integrated with conventional semiconductors (GaAs) and to explore quantum transport in these heterostructures. It is particularly interesting to study spin-dependent resonant tunneling in double-barrier resonant tunneling diodes (RTD) with magnetic elements such as GaAs/AlAs/ErAs/AlAs/ErAs/AlAs/GaAs, GaxMn1-xAs/AlAs/GaAs/AlAs/GaAs, and GaAs/AlAs/GaxMn1-xAs/AlAs/GaAs. We present the results of our theoretical studies and computer simulations of transmission coefficients and current-voltage characteristics of resonant tunneling diodes based on these double-barrier structures. Resonant tunneling of holes (GaxMn1-xAs-based RTDs) is considered. Our approach is based on k·p perturbation theory with exchange splitting effects taken into account. We analyze exchange splitting of different resonant channels as a function of magnetization as well as spin polarization of the transmitted current as a function of bias. We found that resonant tunneling I – V characteristics of the double-barrier magnetic hererostructures strongly depend on the doping level in the emitter as well as on the orientation of the magnetization.

Sign in / Sign up

Export Citation Format

Share Document