Towards Two-Dimensional Oxides for Optoelectronic Applications

MRS Advances ◽  
2018 ◽  
Vol 3 (3) ◽  
pp. 147-151 ◽  
Author(s):  
Jonathan C. Rackham ◽  
Bin Zou ◽  
Michelle A. Moram
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Barium Zirconate ◽  
Two Dimensional ◽  
Bulk Ceramic ◽  
Barium Zirconate Titanate ◽  
Vegard’S Law ◽  
Ceramic Targets

ABSTRACTPreliminary thin films of barium zirconate-titanate (BZT) are grown by pulsed laser deposition from bulk ceramic targets on magnesium oxide (001) substrates. Growth conditions are optimized for film crystallinity and thick (100 nm) films are deposited. These films are seen to be growing with a cube-on-cube epitaxial relation. The lattice constant of the alloy follows Vegard’s law as expected but shows a reasonable amount of non-linearity in the relation between band gap and composition.

scholarly journals Epitaxial growth and magnetic/transport properties of La0.7Sr0.3MnO3 thin films grown on SrTiO3 with optimized growth conditions

RSC Advances ◽  
2017 ◽  
Vol 7 (50) ◽  
pp. 31327-31332 ◽  
Author(s):  
K. Wang ◽  
M. H. Tang ◽  
Y. Xiong ◽  
G. Li ◽  
Y. G. Xiao ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Transport Properties ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Colossal Magnetoresistive ◽  
Magnetic Transport

Epitaxial growth of colossal magnetoresistive thin films of La0.7Sr0.3MnO3 (LSMO) has been achieved on TiO2-terminated (001) SrTiO3 (STO) single-crystal substrates using PLD (pulsed laser deposition).

scholarly journals Influence of the growth conditions on the transparent conductive properties of ZnO：Al thin films grown by pulsed laser deposition

2013 ◽  
Vol 62 (21) ◽  
pp. 216102
Author(s):  
Han Jun ◽  
Zhang Peng ◽  
Gong Hai-Bo ◽  
Yang Xiao-Peng ◽  
Qiu Zhi-Wen ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Conductive Properties

The effect of target crystallography on the growth of Pb(Mg1/3Nb2/3)O3 thin films using pulsed laser deposition

1999 ◽  
Vol 14 (6) ◽  
pp. 2355-2358 ◽  
Author(s):  
M. H. Corbett ◽  
G. Catalan ◽  
R. M. Bowman ◽  
J. M. Gregg
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Lead Magnesium

Pulsed laser deposition has been used to make two sets of lead magnesium niobate thin films grown on single-crystal h100j MgO substrates. One set was fabricated using a perovskite-rich target while the other used a pyrochlore-rich target. It was found that the growth conditions required to produce almost 100% perovskite Pb(Mg1/3Nb2/3)O3 (PMN) films were largely independent of target crystallography. Films were characterized crystallographically using x-ray diffraction and plan view transmission electron microscopy, chemically using energy dispersive x-ray analysis, and electrically by fabricating a planar thin film capacitor structure and monitoring capacitance as a function of temperature. All characterization techniques indicated that perovskite PMN thin films had been successfully fabricated.

scholarly journals Growth of two-dimensional WS2 thin films by pulsed laser deposition technique

2018 ◽  
Vol 668 ◽  
pp. 69-73 ◽  
Author(s):  
Kun Tian ◽  
Karthikeyan Baskaran ◽  
Ashutosh Tiwari
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Two Dimensional ◽  
Deposition Technique

The Optimization of Niobium Diselenide Thin Films Through Control of Pulsed Laser Deposition Parameters

1992 ◽  
Vol 285 ◽  
Author(s):  
Allan E. Day ◽  
Samuel J.P. Laube ◽  
M.S. Donley ◽  
J.S. Zabinski
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Optimal Growth ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Film Properties ◽  
Niobium Diselenide ◽  
Deposition Parameters ◽  
And Control

ABSTRACTNiobium diselenide has potential for use as a conductive lubricant, but to achieve the optimal properties of low friction coefficient, high conductivity and oxidation resistance, the SeJNb ratio and crystallinity must be carefully controlled. It has been shown that Pulsed Laser Deposition (PLD) permits the required degree of control, even over films with complex stoichiometries. (4–8). In this study, PLD was used to grow stoichiometric, crystalline thin films of niobium diselenide and to study the effects of laser deposition parameters on film properties. Film chemistry and crystallinity were evaluated using XPS, RBS, and glancingangle XRD. Friction and wear measurements were taken on a ball-on-flat tribometer. The deposition apparatus incorporates a fully computerized data acquisition and control system that facilitated the correlation of the laser deposition parameters to film properties. This study has shown that film chemistry could be changed from substoichiometric to superstoichiometric and crystallinity varied between amorphous to highly crystalline by appropriate choice of PLD parameters. The property correlations and acquisition system that permitted the identification of the optimal growth conditions will be described.

Epitaxial Growth of GaN Thin Films Using a Hybrid Pulsed Laser Deposition System

1999 ◽  
Vol 572 ◽  
Author(s):  
Philippe Mérel ◽  
Mohamed Chaker ◽  
Henri Pépin ◽  
Malek Tabbal
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Laser Intensity ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Nitrogen Flux ◽  
High Quality ◽  
Rocking Curve

ABSTRACTA hybrid Pulsed Laser Deposition system was developed to perform epitaxial growth of GaN on sapphire(0001). This system combines the laser ablation of a cooled Ga target with a well-characterized atomic nitrogen source. Taking advantage of the flexibility of this unique deposition system, high quality GaN thin films were deposited by optimizing both the laser intensity and the nitrogen flux. To date, our best GaN films show a FWHM of the GaN(0002) rocking curve peak equal to 480 arcsec. This result has been obtained at a laser intensity of I = 7×107 W/cm2, a substrate temperature of 800°C and under Ga-rich growth conditions.

Preparation of two-dimensional thin films by backside irradiation pulsed laser deposition method using powder target

2019 ◽  
Vol 59 (SA) ◽  
pp. SAAC01 ◽  
Author(s):  
Hiroharu Kawasaki ◽  
Tamiko Ohshima ◽  
Yoshihito Yagyu ◽  
Takeshi Ihara ◽  
Masanori Shinohara ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Two Dimensional ◽  
Deposition Method ◽  
Powder Target

Structural Properties and Ionic Conductivity of Ce0.8Gd0.2O2 and Ce0.8Sm0.2O2 Thin Films Grown by Pulsed Laser Deposition

2005 ◽  
Author(s):  
Boscope M. K. Sze ◽  
C. N. Wong ◽  
K. H. Wong
Keyword(s):  
Thin Films ◽  
Ionic Conductivity ◽  
Solid Oxide Fuel Cells ◽  
Pulsed Laser Deposition ◽  
Ambient Pressure ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Deposited Films

Thin films of Ce0.8Gd0.2O2 and Ce0.8Sm0.2O2 oxide electrolytes have been fabricated by pulsed laser deposition on (100)LaAlO3 substrates at temperature from 300 °C to 700 °C and under 100 mTorr oxygen ambient pressure. The crystal structure, crystallinity and lattice parameters of the as-deposited films are investigated by X-ray diffraction. High quality epitaxial and polycrystalline films are obtained at different growth conditions. We have made impedance measurements on these films in the temperature range from 300 °C to 850 °C. Our results reveal a mark increase in the ionic conductivity of these films in comparison with those of the corresponding bulk materials. The observed enhancements are closely related to the crystallinity of the films. Conductivities of 0.1 S/cm or higher for Ce0.8Gd0.2O2 and Ce0.8Sm0.2O2 are obtained at 500 °C. We have demonstrated that in utilizing these thin films solid oxide fuel cells operating at below 500 °C are possible.

Structural and optical properties of Zn1−xCoxO and ZnCo2O4 thin films

2005 ◽  
Vol 891 ◽  
Author(s):  
Kousik Samanta ◽  
Pijush Bhattacharya ◽  
Ram S. Katiyar ◽  
W. Iwamoto ◽  
R. R. Urbano ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Optical Absorption ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Structural And Optical Properties ◽  
Ceramic Targets ◽  
Co Concentrations

ABSTRACTThin films of Co substituted ZnO and ZnCo2O4 were deposited on c-axis (0001) oriented Al2O3 substrates using pulsed laser deposition. The XRD results showed all the films were highly (002) oriented with a less intense peak of (311) for ZnCo2O4 thin film. Micro-Raman spectra of ceramic targets showed the modes related to wurtzite ZnO and spinel ZnCo2O4 structures. In thin films of Zn1−xCoxO no modes corresponding to ZnCo2O4 were detected. The intensity of E1(LO) and multiphonon peak at 584 and 540 cm−1 respectively, increased with increase in Co substitution. The optical absorption of the films showed that the band gap decreased with increase of Co concentrations at room temperature along with the sub-bandgap absorptions due to d-d transitions of Co2+. Similar sub-bandgap d-d transition was also observed in the absorption spectra ZnCo2O4 thin films. The highest saturated magnetization (0.2μB/Co) was obtained for 5%Co substituted ZnO.

Sign in / Sign up

Export Citation Format

Share Document