Ion-assisted pulsed laser deposition of cubic BN films on Si (001) substrates

1992 ◽  
Vol 7 (7) ◽  
pp. 1618-1620 ◽  
Author(s):  
A.K. Ballal ◽  
L. Salamanca-Riba ◽  
G.L. Doll ◽  
C.A. Taylor ◽  
R. Clarke
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Pulsed Laser Deposition ◽  
Lattice Constant ◽  
Infrared Absorption ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zinc Blende ◽  
Transmission Electron ◽  
Axis Parallel

We report on oriented and adherent cubic BN films grown on (001) faces of silicon using the method of ion-assisted pulsed laser deposition. The structure of the films is cubic zinc-blende with a lattice constant of 3.62 Å, as determined by infrared absorption and transmission electron microscopy. The films were found to be polycrystalline, and oriented with the cubic BN [110] axis parallel to the Si [001] direction.

Growth of TiN/AlN Superlattice by Pulsed Laser Deposition

2002 ◽  
Vol 750 ◽  
Author(s):  
H. Wang ◽  
A. Gupta ◽  
Ashutosh Tiwari ◽  
X. Zhang ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Pulsed Laser Deposition ◽  
High Speed ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Internal Stresses ◽  
Layer By Layer ◽  
Special Configuration ◽  
Transmission Electron

ABSTRACTTiN-AlN binary-components have attracted a lot of interests in coatings of high speed cutting tools, due to their higher oxidation resistance, higher hardness, lower internal stresses and better adhesion. Especially, nanometer-scale multilayer structures of AlN/TiN show superior structural and mechanical properties due to their tremendous interface area and become one of the promising candidates for superhard coatings. Here we present a novel method to grow highly aligned TiN/AlN superlattice by pulsed laser deposition. In this method TiN and AlN targets are arranged in a special configuration that they can be ablated in sequence, giving alternate layer by layer growth of TiN(1nm)/AlN(4nm). X-ray diffraction and transmission electron microscopy (TEM) analysis showed the structure to be cubic for both TiN and AlN in the nanoscale multilayers. Microstructure and uniformity for the superlattice structure were studied by TEM and Scanning transmission electron microscopy with Z-contrast (STEM). Nanoindentation results indicated a higher hardness for this new structure than pure AlN and rule-of-mixtures value. Four point probe electrical resistivity measurements showed overall insulating behavior.

scholarly journals Scanning and Transmission Electron Microscopy Studies of Alkali Halides Films Grown by Pulsed Laser Deposition

2013 ◽  
Vol 19 (S2) ◽  
pp. 1588-1589
Author(s):  
D.R. Acosta ◽  
E. Mejia ◽  
C. Sanchez ◽  
J. Martinez ◽  
C. Magana
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Alkali Halides ◽  
Laser Deposition ◽  
Transmission Electron

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

A Simple and Effective Route to Annihilate Defects in Nanocrystalline SnO2 Thin Films Prepared by Pulsed Laser Deposition

2007 ◽  
Vol 1026 ◽  
Author(s):  
Zhiwen Chen ◽  
C. M. L. Wu ◽  
C. H. Shek ◽  
J. K. L. Lai ◽  
Z. Jiao ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Pulsed Laser Deposition ◽  
Gas Sensors ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Transmission Electron ◽  
Sno2 Thin Films

AbstractThe microstructural defects of nanocrystalline SnO2 thin films prepared by pulsed laser deposition have been investigated using transmission electron microscopy, high-resolution transmission electron microscopy and Raman spectroscopy. Defects inside nanocrystalline SnO2 thin films could be significantly reduced by annealing the SnO2 thin films at 300 °C for 2 h. High-resolution transmission electron microscopy showed that stacking faults and twins were annihilated upon annealing. In particular, the edges of the SnO2 nanoparticles demonstrated perfect lattices free of defects after annealing. Raman spectra also confirmed that annealing the specimen was almost defect-free. By using thermal annealing, defect-free nanocrystalline SnO2 thin films can be prepared in a simple and practical way, which holds promise for applications as transparent electrodes and solid-state gas sensors.

Epitaxial Growth of Magnetic Nickel Nanodots by Pulsed Laser Deposition

2002 ◽  
Vol 755 ◽  
Author(s):  
H. Zhou ◽  
D. Kumar ◽  
A. Kvit ◽  
A. Tiwari ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Titanium Nitride ◽  
Pulsed Laser Deposition ◽  
Orientation Relationship ◽  
Deposition Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Crystalline Quality ◽  
Transmission Electron

ABSTRACTEpitaxial nickel magnetic nanodots were obtained by pulsed laser deposition (PLD) technique on Si (100) substrate using epitaxial TiN film as the template. Characterization methods include: high-resolution transmission electron microscopy (HRTEM), scanning transmission electron microscopy (STEM) Z-contrast imaging, selected area electron diffraction (SAD), and X-ray diffraction (XRD) techniques. The results showed that as long as no coalescence between neighboring dots occurred, the dots are all single crystal. The predominant orientation relationship observed is Ni (100) // TiN (100) // Si (100), the so-called “cube-on-cube” orientation relationship. Other rotational orientation relationships, where the nickel crystal rotates an angle with respect to TiN (011) directions, were also observed. The dots are in faceted island shapes, bounded by (111) and (001) facets. The actual size of dots varies from a few nanometers to tens of nanometers, depending on the deposition time and temperature. The shape of a certain dot was found to be closely related to its epitaxial orientation. Effects of deposition temperature and template crystalline quality were studied. It was found that deposition temperature in a certain range does not have much influence on the epitaxial orientation of dots, while the crystalline quality of titanium nitride (the underlying template) is primarily responsible for the orientation variation. At the optimum condition, samples with a large fraction of cube-on-cube orientated nickel dots could be obtained in a rather wide temperature range (up to 250 °C), as evidenced by the strong reflections from both SAD and XRD. Samples containing more than one layer of nickel and titanium nitride matrix were also studied. The results showed that the degree of orientation perfection could be greatly improved by decreasing the size of dots.

Synthesis and Characterization of Metal-Ceramic Thin Film Nanocomposites With Improved Mechanical Properties

2002 ◽  
Author(s):  
D. Kumar ◽  
N. Sudhir ◽  
S. Yarmolenko ◽  
Q. Wei ◽  
J. Sankar ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Transmission Electron ◽  
Thin Film Composites ◽  
Film Composites

Thin films composite materials consisting of metallic nanocrystals embedded in an insulator host have been synthesized using alternating-target pulsed laser deposition of Fe/Ni and Al2O3. The evaluation of structural quality of the thin film composites using high resolution transmission electron microscopy and scanning transmission electron microscopy with atomic number contrast has revealed the formation of a biphase system with thermodynamically driven segregation of Ni and alumina during pulsed laser deposition. The best hardness values of the thin film composites, measured using nanoindentation techniques, was found to 20–30% larger than pure alumina films fabricated under identical conditions. The improvement in values of hardness of Al2O3 thin films by embedding metal nanocrystals is related to the evolution of a microstructure which efficiently hinders the manipulation and movement of dislocation and the growth of microcracks, which in turn, is achieved by grain boundary hardening.

Growth of Epitaxial Cu/TiN/6H-SiC(0001) Heterostructures by Pulsed Laser Deposition

1999 ◽  
Vol 580 ◽  
Author(s):  
A. Kvit ◽  
A.K. Sharma ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Transmission Electron Micrograph ◽  
X Ray Diffraction ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron

AbstractEpitaxial Cu/TiN heterostructures were grown on hexagonal (6H)-SiC(0001) substrate by pulsed laser deposition using the domain epitaxy, where integral multiple of lattice constant or major planes match across the interface1. Such layers are needed for metallization of SiC bond integrated circuit devices. These Cu and TiN layers on SiC(0001) were grown at 600 degrees centigrade in a high vacuum (<10−6 Torr). This structure was characterized using X-ray diffraction technique and transmission electron microscopy. The X-ray diffraction recorded only (111) and (222) reflection of Cu and TiN. The full-width at half maximum of ω-rocking curve of (111) reflection of Cu (0.4 degree) and TEM results indicated a high epitaxial quality. The plan view transmission electron micrograph shows that Cu forms three-dimensional islands indicating that the Cu/TiN interface energy is very high. The island size varies from 0.2 to 2 μm. Analysis of selective aperture diffraction patterns and cross-sectional transmission electron microscopy, including high-resolution imaging, showed relationships Cu(111)//TiN(111)//6H-SiC(0001). The TiN/SiC an interface was locally atomically sharp and free from secondary phases or obvious interdiffusion. The typical defects in the TiN(111) layers consisted of threading domain boundaries. The mechanism of three-dimension growth of copper on TiN layers was discussed.

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