Morphology of heavily B-doped diamond films

1993 ◽  
Vol 8 (11) ◽  
pp. 2845-2857 ◽  
Author(s):  
Koichi Miyata ◽  
Kazuo Kumagai ◽  
Kozo Nishimura ◽  
Koji Kobashi
Keyword(s):  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Plasma Chemical ◽  
X Ray ◽  
Plasma Chemical Vapor Deposition ◽  
Si Substrates ◽  
Surface Morphologies

B-doped diamond films were synthesized by microwave plasma chemical vapor deposition using a mixture of methane (0.5% or 1.2%) and diborane (B2H6) below 50 ppm on either Si substrates or undoped diamond films that had been synthesized using 0.5% or 1.2% methane. The surface morphologies of the synthesized films were observed by Secondary Electron Microscopy, and the infrared absorption and Raman spectra were measured. It was found that when diborane concentration was low, B-doped films preferred (111) facets. On the other hand, high diborane concentrations resulted in a deposition of needle-like material that was identified as graphite by x-ray diffraction.

Growth of highly (111)-oriented, highly coalesced diamond films on platinum (111) surface: A possibility of heteroepitaxy

1996 ◽  
Vol 11 (12) ◽  
pp. 2955-2956 ◽  
Author(s):  
Yoshihiro Shintani
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Plasma Chemical ◽  
X Ray ◽  
Plasma Chemical Vapor Deposition ◽  
Scanning Electron

A highly (111)-oriented, highly coalesced diamond film was grown on platinum (111) surface by microwave plasma chemical vapor deposition (MPCVD). Scanning electron microscopy and x-ray diffraction analyses revealed that the (111) diamond facets were azimuthally oriented epitaxially with respect to the orientation of the Pt(111) domain underneath, with the neighboring facets of diamond being coalesced with each other. The film was confirmed as diamond using Raman spectroscopy.

Growth of Highly (110) Oriented Diamond Film by Microwave Plasma Chemical Vapor Deposition

2018 ◽  
Vol 281 ◽  
pp. 893-899 ◽  
Author(s):  
Yi Fan Xi ◽  
Jian Huang ◽  
Ke Tang ◽  
Xin Yu Zhou ◽  
Bing Ren ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Nucleation Density ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Si Substrates ◽  
Nucleation Stage

In this study, we propose a simple and effective approach to enhance (110) orientation in diamond films grown on (100) Si substrates by microwave plasma chemical vapor deposition. It is found that the crystalline structure of diamond films strongly rely on the CH4 concentration in the nucleation stage. Under the same growth condition, when the CH4 concentration is less than 7% (7%) in the nucleation stage, the diamond films exhibit randomly oriented structure; once the value exceeds 7%, the deposited films are strongly (110) oriented. It could be verified by experiments that the formation of (110) orientation in diamond films are related to the high nucleation density and high fraction of diamond-like carbon existing in nucleation samples.

Study of Carbon Films on Silicon Substrates

2005 ◽  
Vol 482 ◽  
pp. 203-206 ◽  
Author(s):  
O. Jašek ◽  
M. Eliáš ◽  
Z. Frgala ◽  
Jiřina Matějková ◽  
Antonín Rek ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Silicon Substrates ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Si Substrates

Carbon based films on silicon substrates have been studied by high resolution FE SEM equipped by an EDS analyzer. The first type are carbon nanotube (CNT) [1] films prepared on Si/SiO2 substrates with Ni or Fe layers by radiofrequency plasma chemical vapor deposition. Dependence of nanotube films properties on Ni and Fe thickness and deposition conditions have been studied. The second type of films discussed are microcrystalline and nanocrystalline diamond films grown on pre-treated Si substrates by microwave plasma chemical vapor deposition (MPCVD). The pre-treatment was varied and its effect on diamond films was studied.

Evolution of surface relief of epitaxial diamond films upon growth resumption by microwave plasma chemical vapor deposition

CrystEngComm ◽  
2020 ◽  
Vol 22 (12) ◽  
pp. 2138-2146 ◽  
Author(s):  
G. Shu ◽  
V. G. Ralchenko ◽  
A. P. Bolshakov ◽  
E. V. Zavedeev ◽  
A. A. Khomich ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Surface Relief ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Step Growth ◽  
Growth Features

Homoepitaxial diamond growth may proceed with stops and resumptions to produce thick crystals. We found the resumption procedure to take place in a complex way, via a disturbance of step growth features, followed by the recovery after a certain time.

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