Polymorphism of Ti3SiC2

2002 ◽  
Vol 17 (5) ◽  
pp. 948-950 ◽  
Author(s):  
R. Yu ◽  
Q. Zhan ◽  
L. L. He ◽  
Y. C. Zhou ◽  
H. Q. Ye

We investigated the crystal structure of Ti3SiC2 by means of high-resolution electron microscopy (HREM). Two polymorphs, α– and β–Ti3SiC2, were identified. The amount of the α phase was larger than the β phase, indicating that the former has lower energy than the latter. We also found that the bright spots in HREM images of Ti3SiC2 do not necessarily correspond to the atomic columns; thus an intuitive interpretation of the image contrast in terms of the stacking sequences of the close-packed layers should be made cautiously

2013 ◽  
Vol 456 ◽  
pp. 533-536
Author(s):  
Yan Zhi Lou

In this paper, high resolution electron microscopy (HREM) was used to observe nanosized Fe2M precipitates in M50NiL steel, and crystal structure of which was also investigated by selected area electron diffraction (SAED). At the same time, the orientation relationship between the Fe2M and the martensite matrix was also studied. The results suggested that crystal structure of Fe2M is close-packed hexagonal, and lattice parameters about a=b=0.473nm, c=0.772nm, α=β=90°, γ=120°. The orientation relationship between the nanoprecipitates Fe2M and martensite is and .


2009 ◽  
Vol 1184 ◽  
Author(s):  
Fanghua Li ◽  
Chunyan Tang

AbstractImage deconvolution is introduced as an effective tool to enhance the determination of crystal structures and defects in high-resolution electron microscopy. The essence is to transform a single image that does not intuitively represent the examined crystal structure into the structure image. The principle and method of image deconvolution together with the related image contrast theory, the pseudo weak phase object approximation (pseudo WPOA), are briefly described. The method has been applied to different types of dislocations, twin boundaries, stacking faults, and one-dimensional incommensurate modulated structures. Results on the semiconducting epilayers Si0.76Ge0.24/Si and 3C-SiC/Si are given in some detail. The results on other compounds including AlSb/GaAs, GaN, Y0.6Na0.4Ba2Cu2.7Zn0.3O7-δ, Ca0.28Ba0.72Nb2O6 and Bi2.31Sr1.69CuO6+δ are briefly summarized. It is also shown how to recognize atoms of Si from C based on the pseudo WPOA, when the defect structures in SiC was determined at the atomic level with a 200 kV LaB6 microscope.


1988 ◽  
Vol 38 (16) ◽  
pp. 11952-11954 ◽  
Author(s):  
H. Ihara ◽  
R. Sugise ◽  
K. Hayashi ◽  
N. Terada ◽  
M. Jo ◽  
...  

Nature ◽  
1978 ◽  
Vol 274 (5669) ◽  
pp. 322-324 ◽  
Author(s):  
M. A. O'Keefe ◽  
P. R. Buseck ◽  
S. Iijima

2007 ◽  
Vol 46 (2) ◽  
pp. 712-715 ◽  
Author(s):  
Kunio Yubuta ◽  
Yuh-ki Hasegawa ◽  
Yuzuru Miyazaki ◽  
Tsuyoshi Kajitani

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