Ferroelectric domains in coarse-grained lead zirconate titanate ceramics characterized by scanning force microscopy

2003 ◽  
Vol 18 (8) ◽  
pp. 1777-1786 ◽  
Author(s):  
J. Muñoz-Saldaña ◽  
M. J. Hoffmann ◽  
G. A. Schneider

Ferroelectric domain configurations in silver- and lanthanum-doped lead zirconate titanate (PZT) ceramics were characterized by scanning force microscopy using contact as well as piezoelectric response force [i.e., piezoelectric force microscopy (PFM)] modes. Coarse crystallites of hard and soft PZT ceramics (12 μm in Ag-PZT and 30 μm in La-PZT average grain size, respectively) with surface oriented in the {001} planes were chosen to characterize the domain configuration. Results show the conventional right-angled domain structures, which correspond to the {110} twin-related 90° and 180° domains of homogeneous width from 50 to 150 nm. The ability of PFM to image the orientation of pure in-plane arrays of domains (containing 90°-aa- and 180°-aa-types of domain boundaries) is highlighted, and a more detailed notation for in-plane domains is proposed. In addition to such periodical domain arrays, other ordered domains were found, having a misfit of 26° with respect to the{110} domain walls and the {100} surface. This array of domain walls could not be predicted with a geometrical analysis of the intersection of domain walls at the surface according to the conventional spatial array of {110} crystallographic planes. It could be explained only with {210} planes being the domain walls. The reason for this unconventional domain configuration is explained with the clamped conditions of the investigated crystallites in the polycrystalline material.

Author(s):  
M.L.A. Dass ◽  
T.A. Bielicki ◽  
G. Thomas ◽  
T. Yamamoto ◽  
K. Okazaki

Lead zirconate titanate, Pb(Zr,Ti)O3 (PZT), ceramics are ferroelectrics formed as solid solutions between ferroelectric PbTiO3 and ant iferroelectric PbZrO3. The subsolidus phase diagram is shown in figure 1. PZT transforms between the Ti-rich tetragonal (T) and the Zr-rich rhombohedral (R) phases at a composition which is nearly independent of temperature. This phenomenon is called morphotropism, and the boundary between the two phases is known as the morphotropic phase boundary (MPB). The excellent piezoelectric and dielectric properties occurring at this composition are believed to.be due to the coexistence of T and R phases, which results in easy poling (i.e. orientation of individual grain polarizations in the direction of an applied electric field). However, there is little direct proof of the coexistence of the two phases at the MPB, possibly because of the difficulty of distinguishing between them. In this investigation a CBD method was found which would successfully differentiate between the phases, and this was applied to confirm the coexistence of the two phases.


Coatings ◽  
2012 ◽  
Vol 2 (2) ◽  
pp. 94-94
Author(s):  
Pavel Ctibor ◽  
Zdenek Pala ◽  
Hanna Boldyryeva ◽  
Josef Sedláček ◽  
Viliam Kmetík

Author(s):  
Salinee Choowitsakunlert ◽  
Rardchawadee Silapunt ◽  
Hideki Yokoi

This paper presents a study of the effect of antiferromagnetic (AFM) integration on the nano AFM-pinned multiferroic (MF) composites structure. The nano MF composites structure is a potential candidate for a future magnetic read head. The simulation of the AFM/ferromagnetic (FM) bilayers characteristics and the evaluation of the magnetoelectric (ME) effect induced in the 1-dimensional (1D) L-T mode model of AFM-pinned structure of AFM/FM/Ferroelectric (FE)/FM/AFM are performed. FM, FE, and two types of AFM materials are Terfenol-D, lead zirconate titanate (PZT), and PtMn and Cr2O3, respectively. The magnetoelectric (ME) effect is investigated using the 1D standard square law. Magnetic-field induced strain in the FM layer, piezoelectric response of the PZT layer, and the ME coefficient are determined. Specifically, the influence of AFM on the MF composites structure for various AFM thicknesses is of interest. It is found that the maximum electric field and potential across the PZT layer are achieved at 2.7 nm thick of PtMn. The result is well agreed by associated magnetic field-induced strain and ME coefficient.


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