Raman and luminescence spectroscopy study of europium doped zirconia

2008 ◽  
Vol 23 (7) ◽  
pp. 1854-1861 ◽  
Author(s):  
James Ovenstone ◽  
Robert Withnall ◽  
Jack Silver

A Raman spectrometer was used to probe the structure and luminescence of a range of europium-doped zirconia phosphors prepared by different routes. We have demonstrated that the synthesis method and precursor type have a strong influence on the structure and luminescence of the final phosphor product. Raman spectroscopy has also demonstrated the presence of local order around the dopant ions that is not apparent in x-ray diffraction (XRD) and corresponds with changes in luminescence. As europium concentration is increased from 1 mol% to 20 mol%, the long range structure (from XRD) changes from tetragonal to cubic. Raman spectroscopy, however, shows that the 1 mol% material has a localized structure similar to the monoclinic undoped zirconia. This localized symmetry can explain the differences observed previously in emission spectra.

2018 ◽  
Vol 13 (1) ◽  
Author(s):  
Luxi Zhang ◽  
Weitao Su ◽  
Yanwei Huang ◽  
He Li ◽  
Li Fu ◽  
...  

2016 ◽  
Vol 16 (4) ◽  
pp. 3617-3621 ◽  
Author(s):  
Yuping Wang ◽  
Mingxia Li ◽  
Kai Pan ◽  
Rong Li ◽  
Naiying Fan ◽  
...  

Rhombic NaLa(MoO4)2:Ln3+ (Ln = Eu and Tb) nanocrystals were synthesized by a hydrothermal method. The structures and morphologies of the nanocrystals were characterized by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy. The results indicated that the crystalline size increased with increasing Na2MoO4 content. The photoluminescence properties of NaLa(MoO4)2:Ln3+ nanocrystals were investigated in detail. In the emission spectra of NaLa(MoO4)2:Eu3+ nanocrystals, the 5D0 → 7F2 is dominant, and the peak positions and spectral shapes of emissions were independent of Eu3+ concentration. The luminescence intensity increased with increasing Eu3+ concentration, up to about 10 mol%, and then decreased. In the emission spectra of NaLa(MoO4)2:Tb3+ nanocrystals, the 5D4 → 7F5 is dominant. The sample with a dopant concentration of 20 mol% showed the highest emission intensity.


2019 ◽  
Vol 351 (2-3) ◽  
pp. 121-128
Author(s):  
Fei Qin ◽  
Xiang Wu ◽  
Shan Qin ◽  
Dongzhou Zhang ◽  
Vatali B. Prakapenka ◽  
...  

2008 ◽  
Vol 18 (47) ◽  
pp. 5746 ◽  
Author(s):  
Aude Isambert ◽  
Emmanuel Angot ◽  
Philippe Hébert ◽  
Julien Haines ◽  
Claire Levelut ◽  
...  

2010 ◽  
Vol 120 (2-3) ◽  
pp. 263-271 ◽  
Author(s):  
John G. Fisher ◽  
Dibyaranjan Rout ◽  
Kyoung-Seok Moon ◽  
Suk-Joong L. Kang

2018 ◽  
Vol 57 (21) ◽  
pp. 13115-13127 ◽  
Author(s):  
Katarzyna M. Kosyl ◽  
Wojciech Paszkowicz ◽  
Olga Ermakova ◽  
Damian Wlodarczyk ◽  
Andrzej Suchocki ◽  
...  

2017 ◽  
Vol 28 (2) ◽  
pp. 025501 ◽  
Author(s):  
Tanja Etzelstorfer ◽  
Andreas Wyss ◽  
Martin J Süess ◽  
Franziska F Schlich ◽  
Richard Geiger ◽  
...  

2013 ◽  
Vol 740-742 ◽  
pp. 117-120 ◽  
Author(s):  
Adrien Michon ◽  
Ludovic Largeau ◽  
Antoine Tiberj ◽  
Jean Roch Huntzinger ◽  
Olivia Mauguin ◽  
...  

We have grown graphene films on 6H-SiC(0001) using propane CVD and evidenced the strong impact of the hydrogen/argon mixture used as the carrier gas on the graphene/SiC interface and on the orientation of graphene layers. By studying a set of samples grown with different hydrogen/argon mixture using Raman spectroscopy and grazing incidence X-ray diffraction, we evidence the links between graphene/SiC interface and strain in graphene.


2013 ◽  
Vol 124 (5) ◽  
pp. 768-771 ◽  
Author(s):  
M. Tokarczyk ◽  
G. Kowalski ◽  
K. Grodecki ◽  
J. Urban ◽  
W. Strupiński

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