Carbon Nanotube Electronics and Optoelectronics

MRS Bulletin ◽  
2004 ◽  
Vol 29 (6) ◽  
pp. 403-410 ◽  
Author(s):  
Phaedon Avouris

AbstractCarbon nanotubes (CNTs) are one-dimensional nanostructures with unique properties. This article discusses why CNTs provide an ideal basis for a future carbonbased nanoelectronic technology, focusing specifically on single-carbon-nanotube fieldeffect transistors (CNT-FETs). Results of transport experiments and theoretical modeling will be used to address such issues as the nature of the switching mechanism, the role of the metal contacts, the role of the environment, the FET scaling properties, and the use of these findings to produce high-performance p-type, n-type, and ambipolar CNT-FETs and simple intra-nanotube circuits. CNTs are also direct-gap nanostructures that show promise in the field of optoelectronics. This article briefly reviews their optical behavior and presents results that show that ambipolar CNT-FETs can be used to produce electrically controlled light sources based on radiative electron–hole recombination. The reverse process—that is, the generation of photocurrents by the irradiation of single CNT—FETs—and photoconductivity spectra of individual CNTs are also demonstrated.

2011 ◽  
Vol 411 ◽  
pp. 427-431 ◽  
Author(s):  
Miao Miao Tan ◽  
Zi Yi Zhang ◽  
Lin Hui Zhao ◽  
Jian Cheng Zhang

With the development of nano materials, a novel research field of NEMS forms by combining nano materials, nano-structures and nano fabrication with MEMS. Carbon nanotube (CNT) is a kind of one-dimensional nano structures which has unique mechanical, electrical and chemical properties. Using CNTs, new nano-devices with new principle or high performance would be developed. This paper reviews the assembly methods of one dimensional nanostructure and analyzes the characteristics of various methods, which provides reference for the device manufacturing methods using nanotubes/nanowires.


2017 ◽  
Vol 6 (6) ◽  
pp. M3173-M3180 ◽  
Author(s):  
Sakineh E. Moghaddam ◽  
Richa Sethi ◽  
Farzaneh Shayeganfar ◽  
Robert G. Bryant ◽  
Lon J. Wilson

1996 ◽  
Vol 422 ◽  
Author(s):  
V. F. Masterov ◽  
L. G. Gerchikov

AbstractThe Er2O3 quantum dot (cluster) with dimensions about 1.2nm in silicon is discussed as the possible source of the Er related emission in Si:Er,O, excited by photogenerated carriers or in a light-emitting diodes (LED) at forward bias. This quantum dot is represented as a spherical quantum well 0.9eV in depth. The electron level with energy about 0.15eV below the bottom of the silicon conduction band plays role of an electron trap. The trapped electron interacts with a hole in valence band of silicon forming “indirect” exciton bonded to quantum well. The energy is transferred to f - shell of erbium by the Auger electron - hole recombination.


2021 ◽  
Author(s):  
Yaser Alisa ◽  
S. M. Hamidi ◽  
A. Shahnazi ◽  
M. Nabid

Abstract We can summarize the benefits of the water photocatalysis by two words: clean energy and purification of pollutants, and its problems as the large energy gap and electron-hole recombination. Scientists are still looking for a semiconductor whose energy gap lies in the visible region, with electron-hole pairs of longer life time. One of the proposed solutions in this field is combining the available semiconductors (such as TiO2) with a metal of plasmonic properties. The existing of the plasmonic metal will ensure that the visible portion of the solar region will involve in the photocatalysis action. It will be absorbed by the plasmonic metal, be transformed into a local energy that leads to excitation processes in the semiconductor. Also, the existing of the metal will guarantee a longer life time for the electron-gap pairs generated in the semiconductor, as the metal acts as a sink for the electrons generated in the semiconductor. In this paper, we created a unique photocatalyst based on one dimensional grating coated by gold thin film and covered by TiO2 cap layer. By examining the sample with visible radiation, we obtained a rate of sabotage of 25 percent within three hours.


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