Gravure contact printing of flexible, high-performance polymer light emitting diodes for large-area displays and lighting

2011 ◽  
Vol 1340 ◽  
Author(s):  
Alasdair J. Campbell ◽  
Dae-Young Chung ◽  
Jingsong Huang ◽  
Dong-Seok Leem ◽  
Donal D. C. Bradley

ABSTRACTGravure contact printing is the highest volume, large area printing technique known. It is ideally suited for the fabrication of large-area polymer light emitting diode (PLED) based lighting, backlights and displays. Here we show how gravure can be used to fabricate the poly (3,4-ethylene dioxythiophene) : poly(styrene sulfonate) hole injection layer and the light emitting polymer emissive layer in a conventional PLED, as well as the cesium carbonate electron injection layer in an inverted PLED. The performance equals or exceeds that of devices where these layers are deposited by conventional spin-coating.

2008 ◽  
Vol 18 (19) ◽  
pp. 3036-3042 ◽  
Author(s):  
Tsung-Hsun Lee ◽  
Jung-Chun-Andrew Huang ◽  
Georgi L'vovich Pakhomov ◽  
Tzung-Fang Guo ◽  
Ten-Chin Wen ◽  
...  

2005 ◽  
Vol 87 (1) ◽  
pp. 013504 ◽  
Author(s):  
Tzung-Fang Guo ◽  
Fuh-Shun Yang ◽  
Zen-Jay Tsai ◽  
Ten-Chin Wen ◽  
Sung-Nien Hsieh ◽  
...  

1999 ◽  
Vol 558 ◽  
Author(s):  
H. Spreitzer ◽  
H. Becker ◽  
W. Kreuder ◽  
E. Kluge ◽  
H. Schenk

ABSTRACTPoly(p-phenylene vinylene)s (PPVs) are very promising materials for optoelectronic applications, especially for displays based on polymer light emitting diodes (PLEDs). We report here our findings concerning defect structures in this materials and the influence of the discovered irregularities on an important property of the materials, i.e. the operational life in a PLED. Recent improvements, which were deviated from this findings are presented: optimized PPVs with a lower amount of defects result in a strong increase of operational lifetime.


2002 ◽  
Vol 725 ◽  
Author(s):  
Paul W.M. Blom ◽  
Teunis van Woudenbergh ◽  
Hans Huiberts

AbstractThe electro-optical characteristics of a polymer light emitting diode (PLED) with a strongly reduced hole injection have been investigated. The device consists of a poly-p-phenylene vinylene semiconductor with a Ag hole injecting contact, which has an injection barrier of about 1 eV. It is observed that the light and current density of such an injection-limited PLED strongly exceed the expected device characteristics. Numerical calculations of the injection-limited PLED show that the enhanced performance can be explained by a very high electric field at the hole injecting contact, due to trapped electrons.


2012 ◽  
Vol 107 ◽  
pp. 148-153 ◽  
Author(s):  
Hongkyu Kang ◽  
Geunjin Kim ◽  
In-Wook Hwang ◽  
Yonghee Kim ◽  
Kyu Cheol Lee ◽  
...  

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