scholarly journals Performance of Injection-Limited Polymer Light-Emitting Diodes

2002 ◽  
Vol 725 ◽  
Author(s):  
Paul W.M. Blom ◽  
Teunis van Woudenbergh ◽  
Hans Huiberts
Keyword(s):  
Electric Field ◽  
Current Density ◽  
Light Emitting Diode ◽  
Numerical Calculations ◽  
Hole Injection ◽  
Phenylene Vinylene ◽  
Light Emitting ◽  
Polymer Light Emitting Diodes ◽  
Injection Barrier ◽  
Very High

AbstractThe electro-optical characteristics of a polymer light emitting diode (PLED) with a strongly reduced hole injection have been investigated. The device consists of a poly-p-phenylene vinylene semiconductor with a Ag hole injecting contact, which has an injection barrier of about 1 eV. It is observed that the light and current density of such an injection-limited PLED strongly exceed the expected device characteristics. Numerical calculations of the injection-limited PLED show that the enhanced performance can be explained by a very high electric field at the hole injecting contact, due to trapped electrons.

Gravure contact printing of flexible, high-performance polymer light emitting diodes for large-area displays and lighting

2011 ◽  
Vol 1340 ◽  
Author(s):  
Alasdair J. Campbell ◽  
Dae-Young Chung ◽  
Jingsong Huang ◽  
Dong-Seok Leem ◽  
Donal D. C. Bradley
Keyword(s):  
High Performance ◽  
Light Emitting Diode ◽  
Hole Injection ◽  
Large Area ◽  
Contact Printing ◽  
Light Emitting ◽  
High Performance Polymer ◽  
Printing Technique ◽  
Polymer Light Emitting Diodes ◽  
Poly Styrene Sulfonate

ABSTRACTGravure contact printing is the highest volume, large area printing technique known. It is ideally suited for the fabrication of large-area polymer light emitting diode (PLED) based lighting, backlights and displays. Here we show how gravure can be used to fabricate the poly (3,4-ethylene dioxythiophene) : poly(styrene sulfonate) hole injection layer and the light emitting polymer emissive layer in a conventional PLED, as well as the cesium carbonate electron injection layer in an inverted PLED. The performance equals or exceeds that of devices where these layers are deposited by conventional spin-coating.

scholarly journals Investigation of Efficient Hole Injection Layer for Enhancement of Opto-Electrical Properties of an Organic Light Emitting Diode

2021 ◽  
Vol 2062 (1) ◽  
pp. 012025
Author(s):  
Neha Jain ◽  
Vikas Singh ◽  
Vivek Prajapati
Keyword(s):  
Current Density ◽  
Light Emitting Diode ◽  
Hole Injection ◽  
Electrical And Optical Properties ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Hole Injection Layer ◽  
Organic Light ◽  
Electroluminescence Intensity ◽  
The Given

Abstract A multilayer Organic Light Emitting Diode (OLED) has been simulated and analysed for the investigation of an efficient Hole Injection Layer (HIL). Study includes the simulation of different devices which comprises of the different materials as HIL. Three devices have been simulated and their characteristics have been extracted to compare the electrical and optical properties of the OLEDs. It has been found that the device with HAT-CN as HIL has achieved the highest value of the current at the mentioned applied voltage and hence the current density. There is drastic enhancement in the current density of the device when an HIL is inserted in comparison to when it is not used in the OLED. Also, there is an approximate enhancement of around 20% in the device performance when HIL is changed from MoO3 to HAT-CN. The device without any HIL included has the highest electric field at the given voltage. Optical characteristics of the device includes Electroluminescence Intensity with respect to the varying wavelength and it has been observed that OLED achieved the maximum light intensity at an approximate wavelength of around 320 nm.

Demonstration of wafer‐level light emitting diode with very high output power

2014 ◽  
Vol 50 (25) ◽  
pp. 1970-1972 ◽  
Author(s):  
Yibin Zhang ◽  
Fei Xu ◽  
Desheng Zhao ◽  
Hongjuan Huang ◽  
Wei Wang ◽  
...  
Keyword(s):  
Output Power ◽  
Light Emitting Diode ◽  
High Output Power ◽  
Wafer Level ◽  
Light Emitting ◽  
Very High ◽  
High Output

Electron-irradiated n+-Si as hole injection tunable anode of organic light-emitting diode

2012 ◽  
Vol 110 (1) ◽  
pp. 95-99 ◽  
Author(s):  
Y. Z. Li ◽  
Z. L. Wang ◽  
Y. Z. Wang ◽  
H. Luo ◽  
W. J. Xu ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Hole Injection ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Light

Optimization for white organic light-emitting diode based on DCJTB as color conversion layer

2018 ◽  
Vol 32 (27) ◽  
pp. 1850299
Author(s):  
Pei Wang ◽  
Zhen Wang ◽  
Ai Chen ◽  
Jia-Feng Xie ◽  
Xin Zheng
Keyword(s):  
Current Efficiency ◽  
Current Density ◽  
White Light ◽  
Power Efficiency ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Light ◽  
High Efficient ◽  
Color Conversion

In this paper, combining phosphorescence and fluorescence to form white light was realized based on DCJTB:PMMA/ITO/NPB/TCTA/FIrpic:TCTA/TPBi/Ir(ppy)3:TPBi/TPBi/Cs2CO3/Al. The effects of red fluorescence on this white light device was studied by adjusting the concentration of DCJTB. The study shows that the device with a DCJTB concentration of 0.7% in the color conversion layer (CCL) generates a peak current efficiency and power efficiency of 23.4 cd ⋅ A[Formula: see text] and 7.5 lm ⋅ W[Formula: see text], respectively. And it is closest to the equal-energy white point of (0.33, 0.33) which shows a CIE (Commission Internationale de L’Eclairage) coordinate of (0.35, 0.43) and a color rendering index (CRI) of 70 at current density of 10 mA ⋅ cm[Formula: see text]. In order to improve the efficiency, we design and fabricate both high efficient and pure white organic light-emitting diode (WOLED) by replacing the single blue emission layer (EML) with double EMLs of FIrpic:TCTA and FIrpic:TPBi. The further study shows that, when the layers of EML is three and the concentration of DCJTB at 0.7%, the device exhibits good performance specifically, at current density of 10 mA ⋅ cm[Formula: see text], the current efficiency of 28.2 cd ⋅ A[Formula: see text] (power efficiency of 10.3 lm ⋅ W[Formula: see text]), and the CIE coordinate of (0.33, 0.31) (CRI of 80.38).

Polymer light-emitting diodes based on novel soluble poly(p-phenylene vinylene)

1999 ◽  
Author(s):  
HongJin Jiang ◽  
Yan Zhou ◽  
Jingsong Huang ◽  
Boon Siew Ooi ◽  
Yee Loy Lam ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Phenylene Vinylene ◽  
Light Emitting ◽  
Polymer Light Emitting Diodes ◽  
Soluble Poly

scholarly journals Use of Hybrid PEDOT:PSS/Metal Sulfide Quantum Dots for a Hole Injection Layer in Highly Efficient Green Phosphorescent Organic Light-Emitting Diodes

2021 ◽  
Vol 9 ◽  
Author(s):  
Wenqing Zhu ◽  
Kuangyu Ding ◽  
Chen Yi ◽  
Ruilin Chen ◽  
Bin Wei ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Efficiency ◽  
Light Emitting Diode ◽  
Metal Sulfide ◽  
Molybdenum Sulfide ◽  
Hole Injection ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Highly Efficient ◽  
Organic Light

In this study, we have synthesized the molybdenum sulfide quantum dots (MoS2 QDs) and zinc sulfide quantum dots (ZnS QDs) and demonstrated a highly efficient green phosphorescent organic light-emitting diode (OLED) with hybrid poly (3,4-ethylenedioxythiophene)/poly (styrenesulfonate) (PEDOT:PSS)/QDs hole injection layer (HIL). The electroluminescent properties of PEDOT:PSS and hybrid HIL based devices were explored. An optimized OLED based on the PEDOT:PSS/MoS2 QDs HIL exhibited maximum current efficiency (CE) of 72.7 cd A−1, which shows a 28.2% enhancement as compared to counterpart with single PEDOT:PSS HIL. The higher device performance of OLED with hybrid HIL can be attributed to the enhanced hole injection capacity and balanced charge carrier transportation in the OLED devices. The above analysis illustrates an alternative way to fabricate the high efficiency OLEDs with sulfide quantum dots as a HIL.

scholarly journals Luminous Efficiency Improvement of OLED by Thickness Variation of Organic Materials

2019 ◽  
Vol 8 (6) ◽  
pp. 4379-4382
Keyword(s):  
Light Emitting Diode ◽  
Luminous Efficiency ◽  
Hole Injection ◽  
Thickness Variation ◽  
Emission Layer ◽  
New Approach ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Interfaces ◽  
Different Thickness

Organic light emitting diode is a Solid state lighting devices, the charge transporters must be infused from the anode and cathode yet the execution, lifetime, effectiveness and solidness of these devices are normally administered by the correct thickness of the material layers and terminal/organic interfaces at the anode contacts. In this paper we exhibit a new approach using different thickness of organic material of emissive layer and hole injection layer in OLED. We could enhance the effectiveness of doping materials by framing exciplex improved OLED devices and concentrate their execution enhancement by utilizing different thickness. In this work different thickness of emission layer, ETL layer and HIL is taken and maximum luminous efficiency of different devices were observed

Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer

2014 ◽  
Vol 23 (2) ◽  
pp. 028502 ◽  
Author(s):  
Xiao-Peng Yu ◽  
Guang-Han Fan ◽  
Bin-Bin Ding ◽  
Jian-Yong Xiong ◽  
Yao Xiao ◽  
...  
Keyword(s):  
Performance Improvement ◽  
Light Emitting Diode ◽  
Hole Injection ◽  
Light Emitting ◽  
Hole Injection Layer
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