Stable superconducting niobium ultrathin films

2011 ◽  
Vol 1344 ◽  
Author(s):  
Cécile Delacour ◽  
Luc Ortega ◽  
Bernard Pannetier ◽  
Vincent Bouchiat
Keyword(s):  
Critical Temperature ◽  
Ultrathin Films ◽  
Structural Transition ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Early Stages ◽  
Superconducting Sample ◽  
Atomically Flat

ABSTRACTWe report on a combined structural and electronic analysis of niobium ultrathin films (from 2.5 to 10 nm) epitaxially grown in ultra-high vacuum on atomically flat sapphire wafers. We demonstrate a structural transition in the early stages of Nb growth, which coincides with the onset of a superconducting-metallic transition (SMT). The SMT takes place on a very narrow thickness range (1 ML). The thinnest superconducting sample (3 nm/ 9ML) has an offset critical temperature above 4.2K and allows to be processed by standard nanofabrication techniques to generate air and time stable superconducting nanostructures.

Low-energy point-reflection EM

1995 ◽  
Vol 53 ◽  
pp. 610-611
Author(s):  
J. C. H. Spence ◽  
X. Zhang ◽  
J. M. Zuo ◽  
U. Weierstall ◽  
E. Munro ◽  
...  
Keyword(s):  
Low Voltage ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Experimental Point ◽  
Crystalline Substrate ◽  
Point Reflection ◽  
Reflection Geometry ◽  
Optical Analog ◽  
Point Projection ◽  
Atomically Flat

The limited penetration of the low-voltage point-projection microscope (PPM) may be avoided by using the reflection geometry to image clean surfaces in ultra-high vacuum. Figure 1 shows the geometry we are using for experimental point-reflection (PRM) imaging. A nanotip field-emitter at about 100 - 1000 volts is placed above a grounded atomically flat crystalline substrate, which acts as a mirror and anode. Since most of the potential is dropped very close to the tip, trajectories are reasonably straight if the sample is in the far-field of the tip. A resolution of 10 nm is sought initially. The specular divergent RHEED beam then defines a virtual source S' below the surface, resulting in an equivalent arrangement to PPM (or defocused CBED). Shadow images of surface asperities are then expected on the distant detector, out of focus by the tip-to-sample distance. These images can be interpreted as in-line electron holograms and so reconstructed (see X. Zhang et al, these proceedings). Optical analog experiments confirm the absence of foreshortening when the detector is parallel to the surface.

Silicon Wafer Bonding: Effect of Wafer Surface Treatment on Interface Structure and Chemistry

2000 ◽  
Vol 6 (S2) ◽  
pp. 1074-1075
Author(s):  
M.J Cox ◽  
M.J. Kim ◽  
Hong Xu ◽  
R.W. Carpenter
Keyword(s):  
Wafer Bonding ◽  
High Vacuum ◽  
Interface Structure ◽  
Single Step ◽  
Ultra High Vacuum ◽  
Native Oxide ◽  
Wafer Surface ◽  
Step Process ◽  
Bonding Effect ◽  
Atomically Flat

The two most important characteristics of any surface considered for wafer bonding are cleanliness, surface smoothness and macroscopic flatness. Silicon wafers in the as-received condition have a native oxide on the surface several nanometers thick [1], Figure la shows that they also have a layer of hydrocarbons. While they are not clean, they are smooth. Our wafers were plasma or ion cleaned, chemically treated, and ultra high vacuum (UHV) thermal desorption annealed in different combinations to find the best method for providing smooth, contamination free substrates that will produce an atomically flat, chemically clean Si/Si bonded interface.The first approach was a single step process to remove the contaminants and then bond the clean wafers. Cleaning was accomplished by ion bombardment of the surface in an UHV chamber with base pressure 1x109 Torr. This ion cleaning chamber is connected between the UHV (2x10-10 ) bonding chamber and UHV (1x10-10) analysis chamber, allowing wafers to be cleaned, analyzed, and bonded without breaking vacuum [2].

Interrelation Between Structure and Magnetism of Ultra-Thin Mn Films Epitaxially Grown on (001) BCC Fe

1997 ◽  
Vol 475 ◽  
Author(s):  
S. Andrieu ◽  
Ph. Bauer ◽  
H. Fischer ◽  
M. Piecuch ◽  
M. Finazzi ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Electron Diffraction ◽  
Structural Transition ◽  
Magnetic Circular Dichroism ◽  
Magnetic Transition ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
X Ray ◽  
Structural And Magnetic Properties ◽  
X Ray Absorption

ABSTRACTIn this paper, the interrelation between structural and magnetic properties of ultra-thin Mn films epitaxially grown on (001) bcc Fe is studied. The Mn growth and in-plane structure were controlled by electron diffraction (RHEED). The structures of the Mn films were determined by using X-Ray absorption spectroscopy (SEXAFS). Finally, the magnetic properties were studied by using X-Ray magnetic circular dichroïsm (XMCD). All the experiments were performed under ultra-high vacuum. As shown by XMCD experiments, a magnetic transition is observed at 2 Mn monolayers. The analysis of RHEED and SEXAFS experimental results clearly demonstrates that a structural transition comes with this magnetic transition.

Heteroepitaxial Growth of Zinc Oxide Single Crystal Thin Films on (111) Plane YSZ by Pulsed Laser Deposition

1999 ◽  
Vol 570 ◽  
Author(s):  
Hiromichi Ohta ◽  
Hiroaki Tanji ◽  
Masahiro Orita ◽  
Hideo Hosono ◽  
Hiroshi Kawazoe
Keyword(s):  
Vacuum Chamber ◽  
High Vacuum ◽  
Yttria Stabilized Zirconia ◽  
Ultra High Vacuum ◽  
Zno Films ◽  
Heteroepitaxial Growth ◽  
Stabilized Zirconia ◽  
Epitaxial Relationship ◽  
Eximer Laser ◽  
Atomically Flat

ABSTRACTHeteroepitaxial ZnO films were grown on (111) surface of yttria stabilized zirconia (YSZ) and (0001) surface of sapphire by PLD method, using KrF eximer laser (248nm) in an ultra-high-vacuum chamber. ZnO grown on YSZ (111) at the substrate temperature of 800°C had an epitaxial relationship at the ZnO/YSZ interface of ZnO [1120]//YSZ [110]. Hexagonalshaped grains were observed whose surfaces were atomically flat. The grain size of ZnO increased and the Hall mobility rose toward 1400nm and 75cm2/Vs. respectively as film thickness increased from 10 nm to 800 nm.

Structural Studies of Submonolayers of Carbon Atoms on Graphite

1992 ◽  
Vol 270 ◽  
Author(s):  
M. Ge ◽  
K. Sattler ◽  
J. Xhie ◽  
N. Venkateswaran
Keyword(s):  
Pyrolytic Graphite ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Carbon Particles ◽  
Linear Chains ◽  
High Vacuum Condition ◽  
Ultra High Vacuum Condition ◽  
Atomically Flat

ABSTRACTSubmonolayer coverages of carbon adsorbed on highly-oriented pyrolytic graphite were examined by scanning tunneling microscopy under ultra-high vacuum condition. Linear carbon wires were found on atomically flat graphite surfaces. The wires had different thicknesses, from single atomic width to about lnm. The long wires extended to over several hundred nanometers. Two directions, graphite β-β direction and 30° rotated, were preferred for the long wire orientation. Parallel wire alignment, with several nanometers of inter-wire spacings were observed. Carbon particles, from 0.7 to 2 nm in diameter were found to be attached to the carbon wires. Particles from different wires formed parallel linear chains about perpendicular to the wire direction.

Atomic Scale Engineering of SrTiO3 Single Crystal Surfaces and Bicrystal Boundaries for Epitaxial Growth of Oxide Thin Films

1997 ◽  
Vol 474 ◽  
Author(s):  
Q. D. Jiang ◽  
J. Zegenhagen
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Atomic Scale ◽  
Spiral Growth ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Annealing Procedure ◽  
Atomically Flat

ABSTRACTWe introduce a new annealing procedure to prepare well defined surfaces of SrTiO3 single crystal and bicrystal substrates. Annealing SrTiO3 (001) substrates in oxygen and then in ultra high vacuum produces a uniformly TiO2-terminated, atomically flat and ordered SrTiO3 (001) surfaces, as revealed by Auger electron spectroscopy, low energy electron diffraction, and high resolution scanning tunneling microscopy. Applying this annealing procedure to slightly off-cut (∼1.2°) SrTiO3 (001) surfaces has a strong influence on the resulting step structure. Particular annealing procedures can be used to tailor the structure and morphology of the surface and of bicrystal boundaries down to the atomic level. For example, steps of SrTiO3 (001) surfaces can be adjusted to a height of one, two, or multiple times the unit-cell size of STO (aSTO=0.3905 nm). Atomically flat SrTiO3 (001) substrates were used for deposition of SmBa2Cu3O7-δ (SBCO) thin films. The thickness (in a range from 10 nm to 200 nm) dependency of the surface morphology of SmBa2Cu3O7-δ films was investigated with UHV-STM. No spiral growth was observed. Surfaces of all films exhibit stacks of flat terraces which are frequently separated by steps, smaller than the c-axis length cSBCO of SBCO (cSBCO=1.17 nm).

Using Atomic Steps to Control Pentacene Crystal Orientation Texture

2006 ◽  
Vol 965 ◽  
Author(s):  
Valerian Ignatescu ◽  
Jing-Chih M. Hsu ◽  
Alex C. Mayer ◽  
Jack M. Blakely ◽  
George G. Malliaras
Keyword(s):  
High Temperature ◽  
Deposition Rate ◽  
Crystal Orientation ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Atomic Steps ◽  
Significant Alignment ◽  
Afm Analysis ◽  
Atomically Flat ◽  
Miscut Angle

ABSTRACTWe have studied the effect of substrate atomic steps on the azimuthal alignment of vapor-deposited pentacene crystals. Si(111) substrates with a low miscut angle were annealed at high temperature in ultra-high vacuum before the pentacene deposition; this produced surfaces with atomically flat terraces and arrays of parallel atomic steps. AFM analysis shows that pentacene deposited on these heated samples, at a low deposition rate, results in significant alignment of the pentacene crystals along the atomic steps.

Thin Pyrolytic Graphite Films for Electron Microscope Substrates

1971 ◽  
Vol 29 ◽  
pp. 226-227 ◽  
Author(s):  
George H. N. Riddle ◽  
Benjamin M. Siegel
Keyword(s):  
Vacuum Chamber ◽  
Pyrolytic Graphite ◽  
High Vacuum ◽  
Dark Field ◽  
Ultra High Vacuum ◽  
Graphite Substrate ◽  
Nickel Substrate ◽  
Routine Procedure ◽  
Field Electron Microscopy ◽  
Dark Field Electron

A routine procedure for growing very thin graphite substrate films has been developed. The films are grown pyrolytically in an ultra-high vacuum chamber by exposing (111) epitaxial nickel films to carbon monoxide gas. The nickel serves as a catalyst for the disproportionation of CO through the reaction 2C0 → C + CO2. The nickel catalyst is prepared by evaporation onto artificial mica at 400°C and annealing for 1/2 hour at 600°C in vacuum. Exposure of the annealed nickel to 1 torr CO for 3 hours at 500°C results in the growth of very thin continuous graphite films. The graphite is stripped from its nickel substrate in acid and mounted on holey formvar support films for use as specimen substrates.The graphite films, self-supporting over formvar holes up to five microns in diameter, have been studied by bright and dark field electron microscopy, by electron diffraction, and have been shadowed to reveal their topography and thickness. The films consist of individual crystallites typically a micron across with their basal planes parallel to the surface but oriented in different, apparently random directions about the normal to the basal plane.

A High Voltage Electron Microscopy Study of Sub-Oxide Formation in Vanadium

1971 ◽  
Vol 29 ◽  
pp. 212-213
Author(s):  
R. H. Geiss ◽  
R. L. Ladd ◽  
K. R. Lawless
Keyword(s):  
High Vacuum ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Ultra High Vacuum ◽  
Pure Oxygen ◽  
Pressure Oxidation ◽  
High Voltage Electron Microscopy ◽  
Oxidation Study ◽  
Voltage Electron ◽  
Good Agreement

Detailed electron microscope and diffraction studies of the sub-oxides of vanadium have been reported by Cambini and co-workers, and an oxidation study, possibly complicated by carbon and/or nitrogen, has been published by Edington and Smallman. The results reported by these different authors are not in good agreement. For this study, high purity polycrystalline vanadium samples were electrochemically thinned in a dual jet polisher using a solution of 20% H2SO4, 80% CH3OH, and then oxidized in an ion-pumped ultra-high vacuum reactor system using spectroscopically pure oxygen. Samples were oxidized at 350°C and 100μ oxygen pressure for periods of 30,60,90 and 160 minutes. Since our primary interest is in the mechanism of the low pressure oxidation process, the oxidized samples were cooled rapidly and not homogenized. The specimens were then examined in the HVEM at voltages up to 500 kV, the higher voltages being necessary to examine thick sections for which the oxidation behavior was more characteristic of the bulk.

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