A Systematic Study of Metal-assisted Chemical Etching Parameters for Well-Ordered Silicon Nanowire Array Fabrication
Keyword(s):
ABSTRACTMetal-assisted chemical etching is a simple and low-cost silicon nanowire fabrication method which allows control of nanowire diameter, length, shape and orientation. In this work, we fabricated well-ordered silicon nanowire array by patterning gold thin film by nanosphere lithography and etching single crystalline silicon wafer by metal-assisted chemical etching technique. We investigated relation between etched solution concentration and nanowire morphology, wafer crystal orientation, etching rate. This well-ordered silicon nanowires arrays have the potential applications in many fields but especially next generation energy related applications from solar cells to lithium-ion batteries.
2012 ◽
Vol 51
(2)
◽
pp. 02BP09
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2012 ◽
Vol 51
(2S)
◽
pp. 02BP09
◽
2011 ◽
2015 ◽
Vol 29
(30)
◽
pp. 1530007
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