Graphene Terahertz Lasers: Injection versus Optical Pumping

2013 ◽  
Vol 1505 ◽  
Author(s):  
Taiichi Otsuji ◽  
Akira Satou ◽  
Maxim Ryzhii ◽  
Vladimir Mitin ◽  
Victor Ryzhii

ABSTRACTIn this paper we demonstrate that graphene is one of the best materials for new types of terahertz lasers as optical and/or injection pumping of graphene can exhibit negative-dynamic conductivity in the terahertz spectral range. We analyze the formation of nonequilibrium states in optically pumped graphene layers and in forward-biased graphene structures with lateral p-i-n junctions and consider the conditions of population inversion and lasing. The latter provides a significant advantage of the injection pumping in realization of graphene terahertz lasers. We benchmark graphene as a prospective material for injection-type terahertz lasers.

2010 ◽  
Vol 107 (5) ◽  
pp. 054505 ◽  
Author(s):  
V. Ryzhii ◽  
A. A. Dubinov ◽  
T. Otsuji ◽  
V. Mitin ◽  
M. S. Shur

2012 ◽  
Vol 1437 ◽  
Author(s):  
Taiichi Otsuji ◽  
Stephane Boubanga Tombet ◽  
Akira Satou ◽  
Maxim Ryzhii ◽  
Victor Ryzhii

ABSTRACTIn this paper recent advances in terahertz-wave generation in graphene are reviewed. First, fundamental basis of the optoelectronic properties of graphene is introduced. Second, nonequilibrium carrier relaxation and recombination dynamics in optically or electrically pumped graphene is described to introduce a possibility of negative dynamic conductivity in a wide terahertz range. Third, recent theoretical advances toward the creation of current-injection graphene terahertz lasers are described. Fourth, unique terahertz dynamics of the two-dimensional plasmons in graphene are described. Finally, the advantages of graphene materials and devices for terahertz-wave generation are summarized.


2012 ◽  
Vol 1432 ◽  
Author(s):  
D. Cheney ◽  
R. Deist ◽  
B. Gila ◽  
F. Ren ◽  
P. Whiting ◽  
...  

ABSTRACTBy pumping AlGaN/GaN HEMTs with below band-gap light we observe changes in drain current that correspond to the trapping and detrapping of carriers within the band-gap. These changes in drain current are indicators of trap density, since the energy from a specific wavelength of light pumps traps whose activation energies are less than or equal to that of the light source.AlGaN/GaN HEMTs on SiC with dual submicron gates with widths of 125nm, 140nm, or 170nm, are DC-stressed under three different conditions along a load line: VGS=0, VDS=5 (on-state), VGS=-2, VDS=9.2 and, VGS=-6, VDS=25 (off-state). The stress tests are interrupted at 20% degradation and the optically pumped comparisons to the baseline are measured.This paper describes the optical pumping technique and results from experiments of AlGaN/GaN HEMTs under the three DC stress biases along a load line.


2001 ◽  
Vol 188 (1) ◽  
pp. 91-94 ◽  
Author(s):  
A.V. Sakharov ◽  
A.S. Usikov ◽  
W.V. Lundin ◽  
D.A. Bedarev ◽  
A.F. Tsatsulnikov ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document