A Model Dielectric Function for Graphene from the Infrared to the Ultraviolet

2013 ◽  
Vol 1505 ◽  
Author(s):  
A. Boosalis ◽  
R. Elmquist ◽  
M. Real ◽  
N. Nguyen ◽  
M. Schubert ◽  
...  

ABSTRACTA modified critical point model dielectric function for graphene is derived here and used to analyze spectroscopic ellipsometry data obtained over a wide spectral range from 3 to 9 eV. Critical point and exciton resonance energies are extracted and discussed. Our findings indicate that epitaxial graphene on SiC to exhibits equivalent exciton behavior to that of suspended graphene. We further apply our model dielectric function to evaluate dielectric function data for highly oriented pyrolytic graphite reported in the literature. Excellent agreement is found between the critical point model developed here and the literature data even for the low energy spectral range up to 1 eV.

2012 ◽  
Vol 60 (8) ◽  
pp. 1219-1223
Author(s):  
Tae Jung Kim ◽  
Tae Ho Ghong ◽  
Jae Jin Yoon ◽  
Soon Yong Hwang ◽  
Nilesh Barange ◽  
...  

RSC Advances ◽  
2014 ◽  
Vol 4 (63) ◽  
pp. 33549-33554 ◽  
Author(s):  
Rüdiger Schmidt-Grund ◽  
Steffen Richter ◽  
Stefan G. Ebbinghaus ◽  
Michael Lorenz ◽  
Carsten Bundesmann ◽  
...  

The dielectric function tensor elements of an YMnO3 single crystal yield M0 critical point like band-band absorption with discrete spectrally localized Lorentzian transitions within the band gaps.


2018 ◽  
Vol 124 (11) ◽  
pp. 115302 ◽  
Author(s):  
Ufuk Kılıç ◽  
Derek Sekora ◽  
Alyssa Mock ◽  
Rafał Korlacki ◽  
Shah Valloppilly ◽  
...  

1997 ◽  
Vol 481 ◽  
Author(s):  
J. P. Callan ◽  
A. M.-T. Kim ◽  
L. Huangt ◽  
E. N. Glezer ◽  
E. Mazur

ABSTRACTWe use a new broadband spectroscopic technique to measure ultrafast changes in the dielectric function of a material over the spectral range 1.5–3.5 eV following intense 70-fs laser excitation. The results reveal the nature of the phase transformations which occur in the material following excitation. We studied the response of GaAs and Si. For GaAs, there are three distinct regimes of behavior as the pump fluence is increased — lattice heating, lattice disordering, and a semiconductor-to-metal transition.


2021 ◽  
Vol 6 (1) ◽  
Author(s):  
S. Chibani ◽  
D. Farina ◽  
P. Massat ◽  
M. Cazayous ◽  
A. Sacuto ◽  
...  

AbstractWe report the evolution of nematic fluctuations in FeSe1−xSx single crystals as a function of Sulfur content x across the nematic quantum critical point (QCP) xc ~ 0.17 via Raman scattering. The Raman spectra in the B1g nematic channel consist of two components, but only the low energy one displays clear fingerprints of critical behavior and is attributed to itinerant carriers. Curie–Weiss analysis of the associated nematic susceptibility indicates a substantial effect of nemato-elastic coupling, which shifts the location of the nematic QCP. We argue that this lattice-induced shift likely explains the absence of any enhancement of the superconducting transition temperature at the QCP. The presence of two components in the nematic fluctuations spectrum is attributed to the dual aspect of electronic degrees of freedom in Hund’s metals, with both itinerant carriers and local moments contributing to the nematic susceptibility.


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