Low-Temperature Processed Flexible In–Ga–Zn–O Thin-Film Transistors Exhibiting High Electrical Performance

ABSTRACTIn this work, the annealing effects at 180°C in Aluminum-ZnO contacts as function of time were studied. Also, the application in TFTs of ZnO films obtained at low-temperature (200°C) are presented. The ZnO films obtained by ultrasonic Spray Pyrolysis at 200 °C were deposited over Aluminum contacts on SiO2/Si wafers to demonstrate the use of active layer in thin-film transistors. The results show that an improvement can be obtained in metal-ZnO interfaces by low-temperature annealing treatments. However, long annealing time degrade the metal-ZnO interface and may affect the electrical performance of the device.

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Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness

Scientific Reports ◽

10.1038/srep26287 ◽

2016 ◽

Vol 6 (1) ◽

Cited By ~ 11

Author(s):

Ye Kyun Kim ◽

Cheol Hyoun Ahn ◽

Myeong Gu Yun ◽

Sung Woon Cho ◽

Won Jun Kang ◽

...

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

Electrical Performance ◽

Amorphous Ingazno

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Enhancement in electrical performance of indium gallium zinc oxide-based thin film transistors by low temperature thermal annealing

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2011.02.012 ◽

2010 ◽

Vol 13 (5-6) ◽

pp. 320-324 ◽

Cited By ~ 11

Author(s):

Sang-Jin Jeon ◽

Jong-Woong Chang ◽

Kwang-Soo Choi ◽

Jyoti Prakash Kar ◽

Tae-Il Lee ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Low Temperature ◽

Thermal Annealing ◽

Thin Film Transistors ◽

Electrical Performance ◽

Indium Gallium Zinc Oxide ◽

Indium Gallium

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P-7: Improving Electrical Performance of the Scaled Low-Temperature Poly-Si Thin Film Transistors Using Vacuum Encapsulation Technique

SID Symposium Digest of Technical Papers ◽

10.1889/1.3069348 ◽

2008 ◽

Vol 39 (1) ◽

pp. 1192

Author(s):

Wei-Kai Lin ◽

Ta-Chuan Liao ◽

Chun-Yu Wu ◽

Shih-Wei Tu ◽

Yen-Ting Liu ◽

...

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

Electrical Performance ◽

Si Thin Film

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Effects of Interfacial Passivation on the Electrical Performance, Stability, and Contact Properties of Solution Process Based ZnO Thin Film Transistors

Materials ◽

10.3390/ma11091761 ◽

2018 ◽

Vol 11 (9) ◽

pp. 1761 ◽

Cited By ~ 7

Author(s):

Liaojun Wan ◽

Fuchao He ◽

Yu Qin ◽

Zhenhua Lin ◽

Jie Su ◽

...

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

Solution Process ◽

Electrical Performance ◽

Zno Films ◽

Zno Thin Film ◽

Chlorobenzoic Acid ◽

Interfacial Modification ◽

Temperature Solution

This paper reports low temperature solution processed ZnO thin film transistors (TFTs), and the effects of interfacial passivation of a 4-chlorobenzoic acid (PCBA) layer on device performance. It was found that the ZnO TFTs with PCBA interfacial modification layers exhibited a higher electron mobility of 4.50 cm2 V−1 s−1 compared to the pristine ZnO TFTs with a charge carrier mobility of 2.70 cm2 V−1 s−1. Moreover, the ZnO TFTs with interfacial modification layers could significantly improve device shelf-life stability and bias stress stability compared to the pristine ZnO TFTs. Most importantly, interfacial modification layers could also decrease the contact potential barrier between the source/drain electrodes and the ZnO films when using high work-function metals such as Ag and Au. These results indicate that high performance TFTs can be obtained with a low temperature solution process with interfacial modification layers, which strongly implies further potential for their applications.

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