The effects of the microstructure of ZnO films on the electrical performance of their thin film transistors

ABSTRACTIn this work, the annealing effects at 180°C in Aluminum-ZnO contacts as function of time were studied. Also, the application in TFTs of ZnO films obtained at low-temperature (200°C) are presented. The ZnO films obtained by ultrasonic Spray Pyrolysis at 200 °C were deposited over Aluminum contacts on SiO2/Si wafers to demonstrate the use of active layer in thin-film transistors. The results show that an improvement can be obtained in metal-ZnO interfaces by low-temperature annealing treatments. However, long annealing time degrade the metal-ZnO interface and may affect the electrical performance of the device.

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Effects of Interfacial Passivation on the Electrical Performance, Stability, and Contact Properties of Solution Process Based ZnO Thin Film Transistors

Materials ◽

10.3390/ma11091761 ◽

2018 ◽

Vol 11 (9) ◽

pp. 1761 ◽

Cited By ~ 7

Author(s):

Liaojun Wan ◽

Fuchao He ◽

Yu Qin ◽

Zhenhua Lin ◽

Jie Su ◽

...

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

Solution Process ◽

Electrical Performance ◽

Zno Films ◽

Zno Thin Film ◽

Chlorobenzoic Acid ◽

Interfacial Modification ◽

Temperature Solution

This paper reports low temperature solution processed ZnO thin film transistors (TFTs), and the effects of interfacial passivation of a 4-chlorobenzoic acid (PCBA) layer on device performance. It was found that the ZnO TFTs with PCBA interfacial modification layers exhibited a higher electron mobility of 4.50 cm2 V−1 s−1 compared to the pristine ZnO TFTs with a charge carrier mobility of 2.70 cm2 V−1 s−1. Moreover, the ZnO TFTs with interfacial modification layers could significantly improve device shelf-life stability and bias stress stability compared to the pristine ZnO TFTs. Most importantly, interfacial modification layers could also decrease the contact potential barrier between the source/drain electrodes and the ZnO films when using high work-function metals such as Ag and Au. These results indicate that high performance TFTs can be obtained with a low temperature solution process with interfacial modification layers, which strongly implies further potential for their applications.

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Effective performance improvement of organic thin film transistors with multi-layer modifications

The European Physical Journal Applied Physics ◽

10.1051/epjap/2020200138 ◽

2020 ◽

Vol 91 (3) ◽

pp. 30201

Author(s):

Hang Yu ◽

Jianlin Zhou ◽

Yuanyuan Hao ◽

Yao Ni

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Performance Enhancement ◽

Organic Thin Film Transistors ◽

Electrical Performance ◽

Hole Injection ◽

Organic Thin Film ◽

Effective Performance ◽

Significant Performance ◽

P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

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Effect of Illumination on Organic Polymer Thin-Film Transistors

MRS Proceedings ◽

10.1557/proc-771-l10.17 ◽

2003 ◽

Vol 771 ◽

Cited By ~ 3

Author(s):

Michael C. Hamilton ◽

Sandrine Martin ◽

Jerzy Kanicki

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Drain Current ◽

Charge Carriers ◽

Electrical Performance ◽

Organic Polymer ◽

Light Illumination ◽

Polymer Thin Film ◽

Channel Region ◽

White Light Illumination

AbstractWe have investigated the effects of white-light illumination on the electrical performance of organic polymer thin-film transistors (OP-TFTs). The OFF-state drain current is significantly increased, while the drain current in the strong accumulation regime is relatively unaffected. At the same time, the threshold voltage is decreased and the subthreshold slope is increased, while the field-effect mobility of the charge carriers is not affected. The observed effects are explained in terms of the photogeneration of free charge carriers in the channel region due to the absorbed photons.

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Effects of Target Quality on Electrical Performance and Stability of In-Sn-Zn-O Thin-Film Transistors

IEEE Electron Device Letters ◽

10.1109/led.2021.3062369 ◽

2021 ◽

Vol 42 (4) ◽

pp. 529-532

Author(s):

Zhendong Wu ◽

Hengbo Zhang ◽

Xiaolong Wang ◽

Weisong Zhou ◽

Lingyan Liang ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Electrical Performance

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Hydrogenation of Mg-Doped InGaZnO Thin-Film Transistors for Enhanced Electrical Performance and Stability

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3077214 ◽

2021 ◽

pp. 1-5

Author(s):

Ablat Abliz

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Electrical Performance ◽

Mg Doped

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Improving the electrical performance of solution processed oligothiophene thin-film transistors via structural similarity blending

Journal of Materials Chemistry C ◽

10.1039/c7tc00748e ◽

2017 ◽

Vol 5 (21) ◽

pp. 5048-5054 ◽

Cited By ~ 1

Author(s):

Tim Leydecker ◽

Laura Favaretto ◽

Duc Trong Duong ◽

Gabriella Zappalà ◽

Karl Börjesson ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Field Effect ◽

Structural Similarity ◽

Single Component ◽

Electrical Performance ◽

Field Effect Mobility ◽

Solution Processed

Here we show that the blending of structurally similar oligothiophene molecules is an effective approach to improve the field-effect mobility and Ion/Ioff as compared to single component based transistors.

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Tuning the electrical performance and bias stability of a semiconducting SWCNT thin film transistor with an atomic layer deposited AlZrOx composite

RSC Advances ◽

10.1039/c7ra10448k ◽

2017 ◽

Vol 7 (83) ◽

pp. 52517-52523 ◽

Cited By ~ 6

Author(s):

Jun Li ◽

Chuan-Xin Huang ◽

Jian-Hua Zhang

Keyword(s):

Thin Film ◽

Carbon Nanotube ◽

Thin Film Transistors ◽

Thin Film Transistor ◽

Atomic Layer ◽

Electrical Performance ◽

Solution Processed ◽

Single Walled Carbon Nanotube ◽

Single Walled Carbon ◽

Bias Stability

Solution-processed semiconducting single-walled carbon nanotube (s-SWCNT) thin film transistors (TFTs) based on different atomic layer deposited AlZrOx insulators are fabricated and characterized.

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