Microwave Phase Shifters: Epitaxial Growth by Pulsed Laser Deposition of Dielectric Ba0.5Sr0.5TiO3 Thin Films on MgO

2005 ◽  
Vol 902 ◽  
Author(s):  
YauYau Tse ◽  
P. S. Suherman ◽  
T. J. Jackson ◽  
I. P. Jones

AbstractBa0.5Sr0.5TiO3 (BSTO) thin films were grown on (001) MgO using pulsed-laser deposition (PLD). The microstructures of in-situ and ex-situ annealed BSTO films were studied by X-ray diffraction and transmission electron microscopy (TEM). The films showed a cube on cube epitaxial relationship with <100> BSTO // <100> MgO. They were essentially single crystals with a columnar structure and possessed smooth surfaces. The interfaces of the BSTO films and substrates were atomically sharp, with misfit dislocations. Better crystallinity and full strain relaxation was obtained in films grown in 10-1 mbar oxygen and annealed ex-situ. A 30% increase in dielectric tuneability was achieved compared with in-situ annealing and deposition at 10-4 mbar. Threading dislocations are the dominant defects in the films grown in 10-1 mbar oxygen and annealed ex-situ, while the films with in-situ annealing show columnar structures with low angle boundaries.

1993 ◽  
Vol 6 (7) ◽  
pp. 490-496 ◽  
Author(s):  
M Viret ◽  
J F Lawler ◽  
J G Lunney

1999 ◽  
Vol 574 ◽  
Author(s):  
D. Kumar ◽  
K. G. Cho ◽  
Zhang Chen ◽  
V. Craciun ◽  
P. H. Holloway ◽  
...  

AbstractThe growth, structural and cathodoluminescent (CL) properties of europium activated yttrium oxide (Eu:Y2O3) thin films are reported. The Eu:Y2O3 films were grown in-situ using a pulsed laser deposition technique. Our results show that Eu:Y2O3 films can grow epitaxially on (100) LaAlO3 substrates under optimized deposition parameters. The epitaxial growth of Eu:Y2O3 films on LaAlO3, which has a lattice mismatch of ∼ 60 %, is explained by matching of the atom positions in the lattices of the film and the substrate after a rotation. CL data from these films are consistent with highly crystalline Eu:Y2O3 films with an intense CL emission at 611 nm.


2019 ◽  
Vol 3 (9) ◽  
pp. 55-63 ◽  
Author(s):  
Antonello Tebano ◽  
Carmela Aruta ◽  
Pier Gianni Medaglia ◽  
Giuseppe Balestrino ◽  
Norberto G. Boggio ◽  
...  

2001 ◽  
Vol 688 ◽  
Author(s):  
Víctor Rodríguez-Santiago ◽  
Yelitza González ◽  
Félix E. Fernández ◽  
Carl H. Mueller ◽  
Fred W. Van Keuls ◽  
...  

AbstractStrontium barium niobate (SrxBa1−xNb2O6 - SBN) with 0.25≤x≤0.75 is a ferroelectric material of interest for diverse optoelectronic applications. Dielectric properties of bulk SBN crystals were comprehensively studied over 30 years ago for a range of compositions and at frequencies up to 30 MHz, but there is little information on properties at higher frequencies. In particular, and up to the best of our knowledge, there are no published results about SBN thin film dielectric properties at high frequencies. For the study reported here, SBN thin films with x = 0.61 were grown on MgO and LaAlO3 substrates by Pulsed Laser Deposition (PLD). Films with good crystallinity and oriented with c-axis normal to the substrate surface were obtained on both types of substrates, while films on MgO had much better texture due to better lattice matching. Interdigital electrode (IDE) capacitors and coupled microstrip phase shifters (CMPS) were fabricated with both types of samples in order to study dielectric response. Capacitance of the IDE capacitors was measured at 1 MHz as a function of temperature and bias voltage, revealing very low losses but poor capacitance tunability, particularly for samples on MgO. Response of the CMPS structures was measured at room temperature and at high frequencies, up to 21 GHz. Insertion losses were measured up to 28 GHz.


2006 ◽  
Vol 252 (13) ◽  
pp. 4573-4577 ◽  
Author(s):  
Maria Branescu ◽  
A. Vailionis ◽  
I. Ward ◽  
J. Huh ◽  
G. Socol

1991 ◽  
Vol 27 (2) ◽  
pp. 1459-1462 ◽  
Author(s):  
R.M. Bowman ◽  
A.I. Ferguson ◽  
C.M. Pegrum

1991 ◽  
Vol 12 (5) ◽  
pp. 335-338 ◽  
Author(s):  
S.S. Shushtarian ◽  
S.B. Ogale ◽  
G.N. Chaudhari ◽  
P. Singh ◽  
V.J. Rao

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