Periodic Alignment of Silicon Dot Fabricated by Linearly Polarized Nd:YAG Pulse Laser

2006 ◽  
Vol 910 ◽  
Author(s):  
Kensuke Nishioka ◽  
Susumu Horita
Keyword(s):  
Thin Film ◽  
Energy Density ◽  
Laser Beam ◽  
Density Distribution ◽  
Pulse Laser ◽  
Incident Beam ◽  
Sio2 Film ◽  
Energy Density Distribution ◽  
Linearly Polarized ◽  
Si Thin Film

AbstractPeriodically aligned submicron Si dots were fabricated by only irradiating linearly polarized Nd:YAG pulse laser to the amorphous silicon (a-Si) thin film deposited on silicon dioxide (SiO2) film. Interference between the incident beam and the scattered surface wave leads to the spatial periodicity of beam energy density distribution on the surface of the irradiated samples. The a-Si thin film was melted by laser beam, and then, the molten thin Si film was split and condensed due to its surface tensile according to the periodic energy density distribution. The polycrystalline Si (poly-Si) fine lines were formed periodically. After the first irradiation, the sample was rotated by 90o, and the laser beam was irradiated. The periodic energy density distribution was generated on the Si fine lines. Then, the lines were split off and condensed according to the periodic energy density distribution, and the periodically aligned submicron Si dots were fabricated on the SiO2 film.

Fabrication of Periodic Arrays of Nano-sized Si and Ni dots on SiO2 Using Linearly Polarized Nd:YAG Pulsed Laser

2007 ◽  
Vol 1059 ◽  
Author(s):  
Kensuke Nishioka ◽  
Susumu Horita
Keyword(s):  
Energy Density ◽  
Laser Beam ◽  
Density Distribution ◽  
Pulsed Laser ◽  
Incident Beam ◽  
Space Structure ◽  
Energy Density Distribution ◽  
Periodic Arrays ◽  
Beam Energy Density ◽  
Linearly Polarized

ABSTRACTPeriodic arrays of nano-sized Si and Ni dots were fabricated by only irradiating a linearly polarized Nd:YAG pulsed laser beam to Si and Ni thin films deposited on silicon dioxide (SiO2) film. The interference between an incident beam and a scattered surface wave leads to the spatial periodicity of beam energy density distribution on the surface of the irradiated samples. A thin film was melted using a laser beam, and the molten film was split and condensed owing to its surface tensile according to the periodic energy density distribution. Then, the fine lines (line and space structure) were formed periodically. After the formation of fine lines, the sample was rotated by 90°, and the laser beam was irradiated. The periodic energy density distribution was generated on the fine lines, and the lines split and condensed according to the periodic energy density distribution. Eventually, the periodically aligned nano-sized dots were fabricated on the SiO2 film.

Measurement facility for the relative radiation energy density distribution for pulse-periodic lasers

1988 ◽  
Vol 31 (10) ◽  
pp. 966-967
Author(s):  
V. I. Andreev ◽  
A. P. Palivoda ◽  
S. P. Fetisov ◽  
N. V. Shalomeeva ◽  
V. A. Yakovlev
Keyword(s):  
Energy Density ◽  
Density Distribution ◽  
Radiation Energy ◽  
Measurement Facility ◽  
Radiation Energy Density ◽  
Energy Density Distribution

Formation of periodic grain boundary in an Si thin film crystallized by a linearly polarized Nd:YAG pulse laser with an ultra sonic oscillator

2004 ◽  
Vol 808 ◽  
Author(s):  
Hirokazu Kaki ◽  
Takehiko Ootani ◽  
Susumu Horita
Keyword(s):  
Grain Boundary ◽  
Pulse Laser ◽  
Pulse Number ◽  
Novel Technique ◽  
Thermal Distribution ◽  
Irradiation Pulse ◽  
Linearly Polarized ◽  
Boundary Location ◽  
Amorphous Si ◽  
Si Thin Film

ABSTRACTIn order to obtain a large silicon (Si) grain and to control the location of its boundary in a Si film melting-crystallized by a pulse laser, we have proposed to use periodic thermal distribution spontaneously induced by irradiation of a linearly polarized laser beam. We estimated the suitable amorphous Si (a-Si) thickness taking account of multiple reflection theoretically and confirmed it experimentally. Also, we proposed a novel technique to reduce the irradiation pulse number to control the grain boundary location stably in the crystallized Si film, in which the elastic wave was generated on the surface of a-Si film prior to melting-crystallization by using an ultra sonic oscillator. Owing to this technique, we can control the grain boundary location periodically with only 1 pulse irradiation in the crystallized Si film.

Sign in / Sign up

Export Citation Format

Share Document