AlGaN/GaN High Electron Mobility Transistors on Si/SiO2/poly-SiC Substrates
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ABSTRACTThe dc and rf performance of AlGaN/GaN High Electron Mobility Transistors (HEMTs) grown by Molecular Beam Epitaxy on Si-on-poly (SopSiC) substrates is reported. The HEMT structure incorporated a 7 period GaN/AlN superlattice between the AlGaN barrier and GaN channel for improved carrier confinement. The knee voltage of devices with 2 μm gate-drain spacing was 2.12 V and increased to 3 V at 8 μm spacing. The maximum frequency of oscillation, fMAX, was ∼40 GHz for devices with 0.5 μm gate length and 2 μm gate-drain spacing. Parameter extraction from the measured rf characteristics showed a maximum intrinsic transconductance of 143 mS.mm−1.
2004 ◽
Vol 43
(4B)
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pp. 2255-2258
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2010 ◽
Vol 49
(1)
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pp. 014301
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2000 ◽
Vol 39
(Part 2, No. 7B)
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pp. L720-L722
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1997 ◽
Vol 36
(Part 1, No. 4A)
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pp. 2022-2027
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