Schottky Barrier Height Engineering in NiGe/n-Ge(001) Contacts by Germanidation Induced Dopant Segregation

2007 ◽  
Vol 994 ◽  
Author(s):  
S. L. Liew ◽  
C. T. Chua ◽  
D. H. L Seng ◽  
D. Z. Chi
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Dopant Segregation

AbstractSchottky barrier height (ÖB) engineering of NiGe/n-Ge(001) diodes was achieved through germanidation induced dopant segregation on As implanted-Ge substrates. was reduced from 0.55 eV to 0.16 eV with increasing As dose on n-Ge(001) while on p-Ge(001), the diodes exhibited increasing ÖB.

scholarly journals Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing

Materials ◽  
2016 ◽  
Vol 9 (5) ◽  
pp. 315 ◽  
Author(s):  
Chaochao Fu ◽  
Xiangbiao Zhou ◽  
Yan Wang ◽  
Peng Xu ◽  
Ming Xu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Dopant Segregation ◽  
Microwave Annealing
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