Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005.

2005 ◽

Cited By ~ 8

Author(s):

A. Weber ◽

A. Birner ◽

W. Krautschneider

Keyword(s):

Data Retention

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Analytical model for nanowire and nanotube transistors covering both dissipative and ballistic transport

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. ◽

10.1109/essder.2005.1546623 ◽

2005 ◽

Cited By ~ 5

Author(s):

G. Mugnaini ◽

G. Iannaccone

Keyword(s):

Analytical Model ◽

Ballistic Transport ◽

Nanotube Transistors

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UTB SOI SRAM cell stability under the influence of intrinsic parameter fluctuation

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. ◽

10.1109/essder.2005.1546708 ◽

2005 ◽

Cited By ~ 5

Author(s):

K. Samsudin ◽

B. Cheng ◽

A.R. Brown ◽

S. Roy ◽

A. Asenov

Keyword(s):

Parameter Fluctuation ◽

Intrinsic Parameter ◽

Sram Cell ◽

Cell Stability

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High performance ZnO nanowire field effect transistor

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. ◽

10.1109/essder.2005.1546624 ◽

2005 ◽

Cited By ~ 1

Author(s):

S.N. Cha ◽

J.E. Jang ◽

Y. Choi ◽

G.W. Ho ◽

D.-J. Kang ◽

...

Keyword(s):

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Zno Nanowire ◽

Effect Transistor

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Low switching losses devices architectures for power management applications integrated in a low cost 0.13μm CMOS technology

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. ◽

10.1109/essder.2005.1546688 ◽

2005 ◽

Author(s):

C. Grelu ◽

N. Baboux ◽

R.A. Bianchi ◽

C. Plossu

Keyword(s):

Power Management ◽

Low Cost ◽

Cmos Technology ◽

Switching Losses

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Enhancement of data retention time in DRAM using step gated asymmetric(STAR) cell transistors

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. ◽

10.1109/essder.2005.1546617 ◽

2005 ◽

Cited By ~ 3

Author(s):

M.W. Jang ◽

M.S. Seo ◽

Y.T Kim ◽

S.Y. Cha ◽

Y.B. Kim ◽

...

Keyword(s):

Retention Time ◽

Data Retention

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Simulation and characterization of high-frequency performances of advanced MIM capacitors

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. ◽

10.1109/essder.2005.1546693 ◽

2005 ◽

Cited By ~ 1

Author(s):

J. Piquet ◽

O. Cueto ◽

F. Charlet ◽

M. Thomas ◽

C. Bermond ◽

...

Keyword(s):

High Frequency ◽

Mim Capacitors

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Improving DC and AC characteristics of ohmic contact carbon nanotube field effect transistors

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. ◽

10.1109/essder.2005.1546704 ◽

2005 ◽

Cited By ~ 2

Author(s):

M. Pourfath ◽

H. Kosina ◽

B.H. Cheong ◽

W.J. Park ◽

S. Selberherr

Keyword(s):

Carbon Nanotube ◽

Ohmic Contact ◽

Field Effect ◽

Field Effect Transistors

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Finite element simulation of thermomechanical stress evolution in cu/low-k interconnects during manufacturing and subsequent thermal cycling

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. ◽

10.1109/essder.2005.1546692 ◽

2005 ◽

Cited By ~ 1

Author(s):

N. Cherault ◽

J. Besson ◽

C. Goldberg ◽

N. Casanova ◽

M.-H. Berger

Keyword(s):

Finite Element ◽

Thermal Cycling ◽

Finite Element Simulation ◽

Stress Evolution ◽

Thermomechanical Stress ◽

Element Simulation ◽

Low K

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Immunity to substrate effect in advanced ΩFET devices

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. ◽

10.1109/essder.2005.1546590 ◽

2005 ◽

Author(s):

R. Ritzenthaler ◽

O. Faynot ◽

C. Jahan ◽

A. Kuriyama ◽

L. Brevard ◽

...

Keyword(s):

Substrate Effect

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Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005.
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Data retention analysis on individual cells of 256Mb DRAM in 110nm technology

Analytical model for nanowire and nanotube transistors covering both dissipative and ballistic transport

UTB SOI SRAM cell stability under the influence of intrinsic parameter fluctuation

High performance ZnO nanowire field effect transistor

Low switching losses devices architectures for power management applications integrated in a low cost 0.13μm CMOS technology

Enhancement of data retention time in DRAM using step gated asymmetric(STAR) cell transistors

Simulation and characterization of high-frequency performances of advanced MIM capacitors

Improving DC and AC characteristics of ohmic contact carbon nanotube field effect transistors

Finite element simulation of thermomechanical stress evolution in cu/low-k interconnects during manufacturing and subsequent thermal cycling

Immunity to substrate effect in advanced ΩFET devices

Export Citation Format

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005.Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Data retention analysis on individual cells of 256Mb DRAM in 110nm technology

Analytical model for nanowire and nanotube transistors covering both dissipative and ballistic transport

UTB SOI SRAM cell stability under the influence of intrinsic parameter fluctuation

High performance ZnO nanowire field effect transistor

Low switching losses devices architectures for power management applications integrated in a low cost 0.13μm CMOS technology

Enhancement of data retention time in DRAM using step gated asymmetric(STAR) cell transistors

Simulation and characterization of high-frequency performances of advanced MIM capacitors

Improving DC and AC characteristics of ohmic contact carbon nanotube field effect transistors

Finite element simulation of thermomechanical stress evolution in cu/low-k interconnects during manufacturing and subsequent thermal cycling

Immunity to substrate effect in advanced ΩFET devices

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005.
Latest Publications