Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005.
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TOTAL DOCUMENTS

178

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Published By IEEE

0780392035

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Low switching losses devices architectures for power management applications integrated in a low cost 0.13μm CMOS technology

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. ◽

10.1109/essder.2005.1546688 ◽

2005 ◽

Author(s):

C. Grelu ◽

N. Baboux ◽

R.A. Bianchi ◽

C. Plossu

Keyword(s):

Power Management ◽

Low Cost ◽

Cmos Technology ◽

Switching Losses

Enhancement of data retention time in DRAM using step gated asymmetric(STAR) cell transistors

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. ◽

10.1109/essder.2005.1546617 ◽

2005 ◽

Cited By ~ 3

Author(s):

M.W. Jang ◽

M.S. Seo ◽

Y.T Kim ◽

S.Y. Cha ◽

Y.B. Kim ◽

...

Keyword(s):

Retention Time ◽

Data Retention

High performance ZnO nanowire field effect transistor

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. ◽

10.1109/essder.2005.1546624 ◽

2005 ◽

Cited By ~ 1

Author(s):

S.N. Cha ◽

J.E. Jang ◽

Y. Choi ◽

G.W. Ho ◽

D.-J. Kang ◽

...

Keyword(s):

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Zno Nanowire ◽

Effect Transistor

Data retention analysis on individual cells of 256Mb DRAM in 110nm technology

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. ◽

10.1109/essder.2005.1546616 ◽

2005 ◽

Cited By ~ 8

Author(s):

A. Weber ◽

A. Birner ◽

W. Krautschneider

Keyword(s):

Data Retention

Analytical model for nanowire and nanotube transistors covering both dissipative and ballistic transport

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. ◽

10.1109/essder.2005.1546623 ◽

2005 ◽

Cited By ~ 5

Author(s):

G. Mugnaini ◽

G. Iannaccone

Keyword(s):

Analytical Model ◽

Ballistic Transport ◽

Nanotube Transistors

UTB SOI SRAM cell stability under the influence of intrinsic parameter fluctuation

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. ◽

10.1109/essder.2005.1546708 ◽

2005 ◽

Cited By ~ 5

Author(s):

K. Samsudin ◽

B. Cheng ◽

A.R. Brown ◽

S. Roy ◽

A. Asenov

Keyword(s):

Parameter Fluctuation ◽

Intrinsic Parameter ◽

Sram Cell ◽

Cell Stability

Finite element simulation of thermomechanical stress evolution in cu/low-k interconnects during manufacturing and subsequent thermal cycling

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. ◽

10.1109/essder.2005.1546692 ◽

2005 ◽

Cited By ~ 1

Author(s):

N. Cherault ◽

J. Besson ◽

C. Goldberg ◽

N. Casanova ◽

M.-H. Berger

Keyword(s):

Finite Element ◽

Thermal Cycling ◽

Finite Element Simulation ◽

Stress Evolution ◽

Thermomechanical Stress ◽

Element Simulation ◽

Low K

Immunity to substrate effect in advanced ΩFET devices

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. ◽

10.1109/essder.2005.1546590 ◽

2005 ◽

Author(s):

R. Ritzenthaler ◽

O. Faynot ◽

C. Jahan ◽

A. Kuriyama ◽

L. Brevard ◽

...

Keyword(s):

Substrate Effect

Tunneling and intersubband coupling in ultra-thin body double-gate mosfets

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. ◽

10.1109/essder.2005.1546593 ◽

2005 ◽

Author(s):

V. Sverdlov ◽

A. Gehring ◽

H. Kosina ◽

S. Selberherr

Keyword(s):

Thin Body ◽

Double Gate

Characterization and modeling of Al/sub 2/O/sub 3/ MIM capacitors: temperature and electrical field effects

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. ◽

10.1109/essder.2005.1546636 ◽

2005 ◽

Author(s):

S. Becu ◽

S. Cremer ◽

O. Noblanc ◽

J.-L. Autran ◽

P. Delpech

Keyword(s):

Electrical Field ◽

Field Effects ◽

Mim Capacitors

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005.Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Low switching losses devices architectures for power management applications integrated in a low cost 0.13μm CMOS technology

Enhancement of data retention time in DRAM using step gated asymmetric(STAR) cell transistors

High performance ZnO nanowire field effect transistor

Data retention analysis on individual cells of 256Mb DRAM in 110nm technology

Analytical model for nanowire and nanotube transistors covering both dissipative and ballistic transport

UTB SOI SRAM cell stability under the influence of intrinsic parameter fluctuation

Finite element simulation of thermomechanical stress evolution in cu/low-k interconnects during manufacturing and subsequent thermal cycling

Immunity to substrate effect in advanced ΩFET devices

Tunneling and intersubband coupling in ultra-thin body double-gate mosfets

Characterization and modeling of Al/sub 2/O/sub 3/ MIM capacitors: temperature and electrical field effects

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005.
Latest Publications