Electron Spin Resonance and Ultra Violet (UV) Photoluminescence of Ge Implanted CuGaSe2 Thin Films Prepared by the CCSVT (Chemical Close-spaced Vapor Transport) Technique

2007 ◽  
Vol 1012 ◽  
Author(s):  
Serge Doka ◽  
Jasmin Hofstetter ◽  
Marin Rusu ◽  
Ernest Arushanov ◽  
Lips Klaus ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Ultra Violet ◽  
Vapor Transport ◽  
Polycrystalline Thin Film ◽  
Spin Resonance ◽  
Deep Donor ◽  
Donor States ◽  
P Type ◽  
Peak Emission

AbstractNon-equilibrium ion implantation of Ge in p-type polycrystalline thin film CuGaSe2 (CGSe) prepared by Chemical Close-spaced Vapor Transport (CCSVT) has been performed with the goal to achieve n-type doping of this chalcopyrite semiconductor. Using Electron Spin Resonance (ESR) it is shown that Ge implantation induces a paramagnetic specie at g = 2.003. A model is proposed that assigns the ESR signal to electrons trapped by donor states that are electrically inactive. Moreover, UV photoluminescence of Ge implanted films has evidenced a new peak emission at 1.47 eV, which is resolved as a radiative recombination of a hole bound to the native copper vacancy and an electron bound to a deep donor with an ionization energy of ED =360±10 meV.

scholarly journals Mn charge states in GaMnN as a function of Mn concentration and co-doping

2007 ◽  
Vol 1040 ◽  
Author(s):  
Enno Malguth ◽  
Axel Hoffmann ◽  
Wolfgang Gehlhoff ◽  
Matthew H. Kane ◽  
Ian T. Ferguson
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Magnetic Semiconductor ◽  
Electron Spin Resonance Spectroscopy ◽  
Resonance Spectroscopy ◽  
Mg Doping ◽  
Co Doping ◽  
Spin Resonance ◽  
P Type ◽  
Mn Concentration

AbstractIn the context of the pursuit of a dilute magnetic semiconductor for spintronic applications, a set of GaMnN samples with varying Mn concentration and Si or Mg co-doping was investigated by optical and electron spin resonance spectroscopy. The results clearly demonstrate how the charge state of Mn is changed between 2+, 3+ and 4+ by Mg and Si co-doping. For p-type GaMnN we show that the introduction of the Mn3+/4+ donor can be compensated by Mg co-doping lowering the Fermi energy below the Mn3+/4+ level. While our results are in agreement with the hypothesis that the infrared photoluminescence appearing in GaMnN upon Mg doping originates from Mn4+, an unambiguous proof is still to be presented. Under this assumption, our measurements show that the Mn4+ center must be excited via an extra-center process at 2.54 eV.

Defect and Tail States in Microcrystalline Silicon investigated by pulsed ESR

2000 ◽  
Vol 609 ◽  
Author(s):  
P. Kanschat ◽  
H. Mell ◽  
K. Lips ◽  
W. Fuhs
Keyword(s):  
Electron Spin Resonance ◽  
Detailed Analysis ◽  
Electron Spin ◽  
Qualitative Model ◽  
Dangling Bond ◽  
Microcrystalline Silicon ◽  
Band Tail ◽  
Spin Resonance ◽  
Donor States ◽  
Broad Structure

ABSTRACTWe report on a detailed analysis of paramagnetic states in a doping series of microcrystalline silicon, μc-Si:H, by pulsed electron spin resonance. We identify two dangling bond like structures at g = 2.0052 (db1) and g = 2.0043 (db2). Whereas db1 is evenly distributed in the gap, the db2 state is found to be localized in the lower part of the gap. The CE resonance at g ≈ 1.998 is assigned to electrons in conduction band tail states. In p-doped samples, we observe a broad structure CH at g ≈ 2.08 which we identify with holes trapped in valence band tail states. It is shown that the CH state behaves very similar on illumination as the CE resonance. In n-type samples a pair of hyperfine split lines (A ≈ 11 mT) is found which apparently does not originate from 31P-donor states. On the basis of our results we propose a qualitative model for paramagnetic states in μc-Si:H.

Shallow Donor States in InP - Electron-Spin-Resonance Induced Overhauser Shift -

1993 ◽  
Vol 117-118 ◽  
pp. 369-374 ◽  
Author(s):  
Kenji Murakami ◽  
Takasumi Ohyanagi ◽  
Kazusato Hara ◽  
K. Masuda
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Shallow Donor ◽  
Spin Resonance ◽  
Donor States

ESR Study on Hydrogen Passivation of Intrinsic Defects in p-Type and Semi-Insulating 4H-SiC

2016 ◽  
Vol 858 ◽  
pp. 318-321 ◽  
Author(s):  
Kohki Murakami ◽  
Soki Tanai ◽  
Takafumi Okuda ◽  
Jun Suda ◽  
Tsunenobu Kimoto ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Hydrogen Passivation ◽  
Intrinsic Defects ◽  
Spin Resonance ◽  
P Type

We studied the hydrogen passivation/depassivation of four types of intrinsic defects (EI5/6, HEI7/8, HEI9/10, and P6/7) in p-type and semi-insulating 4H-SiC by means of electron spin resonance (ESR) for examining the origin of career-lifetime-killing defects. We suggest that the HEI7/8 and P6/7 centers are the strongest candidate for the origin of the lifetime-killing defects.

scholarly journals Paramagnetic defects in GaN

1998 ◽  
Vol 3 ◽  
Author(s):  
M. Palczewska ◽  
B. Suchanek ◽  
R. Dwili˜ski ◽  
K. Paku ,a ◽  
A. Wagner ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Shallow Donor ◽  
Resonance Signal ◽  
Electrical Measurements ◽  
Deep Acceptor ◽  
Isotropic Line ◽  
Spin Resonance ◽  
P Type ◽  
Mg Doped

In this work, paramagnetic defects in wurtzite GaN crystals were systematically studied using the Electron Spin Resonance (ESR) technique and using electrical measurements. Three different resonance signals were found. The first had g|| = 1.9514 ± 0.0005 and g⊥ = 1.9486 ± 0.0005, a commonly observed defect in n-type crystals ascribed to the shallow donor of GaN [1]. The second ESR signal, an anisotropic line of g|| = 2.0728 ± 0.0015 and g⊥ = 1.9886 ± 0.0015, was observed only in Mg-doped p-type GaN layers, and was assigned to the Mg acceptor. The last ESR resonance signal, an isotropic line with g = 2.0026 ± 0.0005 was observed only in AMMONO GaN crystals after thermal annealing, as well as in Mg-doped GaN epitaxial layers. It was tentatively identified as due to a deep acceptor.

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