Resolution Performance of Programmable Proximity Aperture MeV Ion Beam Lithography System

AbstractAn ion beam lithography system for light and heavy ions has been developed at the University of Jyväskylä's Accelerator Laboratory. The system employs a programmable proximity aperture to define the beam. The proximity aperture is made up of four Ta blades with precise straight edges that cut the beam in the horizontal and vertical directions. The blade positions and dimensions are controlled by a pair of high-precision linear-motion positioners. The sample is mounted on a X-Y-Z stage capable of moving with 100 nm precision steps under computer control. The resolution performance of the system is primarily governed by the proximity aperture. Pattern edge sharpness is set by the beam divergence, aperture blade straightness, and secondary and scattered particles from the aperture blade edges. Ray tracing simulations using the object oriented toolkit GEANT4 were performed to investigate the beam spatial resolution on the sample defined by the proximity aperture. The results indicate that the edge-scattering does not significantly affect the pattern edge sharpness.

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Development of wide range energy focused ion beam lithography system

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590195 ◽

1998 ◽

Vol 16 (4) ◽

pp. 2484 ◽

Cited By ~ 6

Author(s):

M. Kinokuni

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Ion Beam Lithography ◽

Wide Range ◽

Lithography System

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Maskless ion beam lithography system

Microelectronic Engineering ◽

10.1016/s0167-9317(99)00042-8 ◽

1999 ◽

Vol 46 (1-4) ◽

pp. 469-472 ◽

Cited By ~ 4

Author(s):

Y. Lee ◽

R.A. Gough ◽

T.J. King ◽

Q. Ji ◽

K.N. Leung ◽

...

Keyword(s):

Ion Beam ◽

Ion Beam Lithography ◽

Lithography System

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Multi-Ion Beam Lithography and Processing Studies

MRS Proceedings ◽

10.1557/opl.2011.1210 ◽

2011 ◽

Vol 1354 ◽

Cited By ~ 3

Author(s):

Bill R. Appleton ◽

Sefaattin Tongay ◽

Maxime Lemaitre ◽

Brent Gila ◽

David Hays ◽

...

Keyword(s):

Ion Beam ◽

Mass Separation ◽

Morphological Transformation ◽

University Of Florida ◽

Temporal Precision ◽

Ion Beam Lithography ◽

Si Nanocrystals ◽

Wide Range ◽

Liquid Metal Alloy ◽

The University

ABSTRACTThe University of Florida (UF) have recently collaborated with Raith Inc. to modify Raith’s ion beam lithography, nanofabrication and engineering (ionLiNE) station that utilizes only Ga ions, into a multi-ion beam system (MionLiNE) by adding the capabilities to use liquid metal alloy sources (LMAIS) to access a variety of ions and an EXB filter for mass separation. The MionLiNE modifications discussed below provide a wide range of spatial and temporal precision that can be used to investigate ion solid interactions under extended boundary conditions, as well as for ion lithography and nanofabrication. Here we demonstrate the ion beam lithographic capabilities of the MionLiNE for fabricating patterned arrays of Au and Si nanocrystals, with nanoscale dimensions, in SiO2 substrates, by direct implantation; and show that the same directwrite/maskless-implantation features can be used for in situ fabrication of nanoelectronic devices. Additionally, the spatial and temporal capabilities of the MionLiNE are used to explore the effects of dose rate on the long-standing surface morphological transformation that occurs in ion bombarded Ge.

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ION BEAM MATERIALS ANALYSIS AND MODIFICATIONS AT keV TO MeV ENERGIES AT THE UNIVERSITY OF NORTH TEXAS

International Journal of Modern Physics Conference Series ◽

10.1142/s2010194514601471 ◽

2014 ◽

Vol 27 ◽

pp. 1460147 ◽

Cited By ~ 2

Author(s):

BIBHUDUTTA ROUT ◽

MANGAL S. DHOUBHADEL ◽

PRAKASH R. POUDEL ◽

VENKATA C. KUMMARI ◽

WICKRAMAARACHCHIGE J. LAKSHANTHA ◽

...

Keyword(s):

Ion Implantation ◽

Nuclear Physics ◽

Ion Beam ◽

High Energy ◽

Particle Accelerators ◽

Educational Training ◽

North Texas ◽

University Of North Texas ◽

Ion Beam Lithography ◽

The University

The University of North Texas (UNT) Ion Beam Modification and Analysis Laboratory (IBMAL) has four particle accelerators including a National Electrostatics Corporation (NEC) 9SDH-2 3 MV tandem Pelletron, a NEC 9SH 3 MV single-ended Pelletron, and a 200 kV Cockcroft-Walton. A fourth HVEC AK 2.5 MV Van de Graaff accelerator is presently being refurbished as an educational training facility. These accelerators can produce and accelerate almost any ion in the periodic table at energies from a few keV to tens of MeV. They are used to modify materials by ion implantation and to analyze materials by numerous atomic and nuclear physics techniques. The NEC 9SH accelerator was recently installed in the IBMAL and subsequently upgraded with the addition of a capacitive-liner and terminal potential stabilization system to reduce ion energy spread and therefore improve spatial resolution of the probing ion beam to hundreds of nanometers. Research involves materials modification and synthesis by ion implantation for photonic, electronic, and magnetic applications, micro-fabrication by high energy (MeV) ion beam lithography, microanalysis of biomedical and semiconductor materials, development of highenergy ion nanoprobe focusing systems, and educational and outreach activities. An overview of the IBMAL facilities and some of the current research projects are discussed.

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