Large Magnetoresistance Variation of Pseudo Spin Valves with Different Nano Oxide Layer Position

2007 ◽  
Vol 1032 ◽  
Author(s):  
Jeong Dae Suh ◽  
C.A. Ross

AbstractWe have investigated the influence of the nano-oxide layer positions on giant magnetoresistance(GMR) of the NiFe(9nm)/Cu(4nm)/Co(5nm) pseudo spin valves. Nano-oxide layer positions had a several effects on the multilayer structure that changes its magnetotransport behavior. GMR ratio varied between 2.8% and 0.15% depending on the nano-oxide layer positions within the stack. The increase of the GMR ratio was accompanied by increase in resistance change, decrease in sheet resistance, and decrease in surface roughness. These significant variations of GMR ratio was explained by the changes on the spin dependent scattering or current shunting effect. Our results showed that appropriate placement of a nano-oxide layer was essential fo optimize magnetoresistance and properties of spin valves.

Author(s):  
Y. Kamiguchi ◽  
H. Yuasa ◽  
H. Fukuzawa ◽  
K. Koui ◽  
H. Iwasaki ◽  
...  
Keyword(s):  

2017 ◽  
Vol 112 ◽  
pp. 04011
Author(s):  
Daniela Ionescu ◽  
Gabriela Apreotesei

1997 ◽  
Vol 475 ◽  
Author(s):  
G.J. Strijkers ◽  
H.J.M. Swagten ◽  
A.H.M. Mettler ◽  
M.M.H. Willekens ◽  
W.J.M. De Jonge

ABSTRACTWe introduce an interface selective structure, composed of a spin-valve on top of which a thick nonmagnetic back layer is deposited as a straightforward experimental tool to measure the GMR induced by ultrathin magnetic layers. The interface selectivity of spin-dependent scattering is evidenced by calculations and illustrated in both Co/Cu/Co and Ni80Fe20/Cu/Ni80Fe20 spin-valves by an almost discontinuous behavior in the GMR ratio. The temperture dependence of the extremely short length scale associated with this discontinuity is discussed in relation to the structure of ultrathin ferromagnetic layers.


2006 ◽  
Vol 6 (11) ◽  
pp. 3483-3486 ◽  
Author(s):  
Chunghee Nam ◽  
Youngman Jang ◽  
Ki-Su Lee ◽  
Jungjin Shim ◽  
B. K. Cho

2007 ◽  
Vol 91 (1) ◽  
pp. 011905 ◽  
Author(s):  
C. Y. You ◽  
A. Cerezo ◽  
P. H. Clifton ◽  
L. Folks ◽  
M. J. Carey ◽  
...  

2010 ◽  
Vol 107 (9) ◽  
pp. 093910 ◽  
Author(s):  
Anoop Gupta ◽  
Senthilnathan Mohanan ◽  
Michael Kinyanjui ◽  
Andrey Chuvilin ◽  
Ute Kaiser ◽  
...  

2006 ◽  
Vol 6 (11) ◽  
pp. 3483-3486
Author(s):  
Chunghee Nam ◽  
Youngman Jang ◽  
Ki-Su Lee ◽  
Jungjin Shim ◽  
B. K. Cho

We have studied the influence of the insertion of a nano-oxide layer (NOL) into a magnetic GMR spin-valve. It was found that the spin-valve with NOL has a higher GMR ratio than that of the normal spin-valve without NOL. Naturally formed NOL without vacuum break shows a uniform layer, which effectively suppresses the current shunt, resulting in the reduction of the sheet resistance of GMR. The NOL spin-valve also shows a lower interlayer coupling (Hin) than that of the optimal normal spin-valve, which is consistent with AFM measurement showing lower roughness of NOL formed CoFe surface. Based on the advantage of NOL, we succeeded in lowering Hin while maintaining GMR ratio by insertion of NOL inside the CoFe free layer, where the free layer consists of CoFe/NOL/CoFe/NOL/Capping layer.


2002 ◽  
Vol 81 (1) ◽  
pp. 105-107 ◽  
Author(s):  
S. H. Jang ◽  
T. Kang ◽  
H. J. Kim ◽  
K. Y. Kim

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