Metastable Phases and the Molecular Beam Epitaxy of Metal Silicides

1987 ◽  
Vol 104 ◽  
Author(s):  
J. M. Gibson
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Interface Energy ◽  
Metastable Phases ◽  
Transmission Electron ◽  
Metal Silicides

ABSTRACTThe growth of the epitaxial silicides NiSi2 and CoSi2 on Si is discussed from observations made by in-situ transmission electron microscopy. In particular, we observe the occurrence of epitaxial metastable phases which arise from the dominance of interface energy in extremely thin films. Such phases relate to the thickness dependence of the microstructure in these silicides and may be expected to occur in many binary and more complex thin film systems.

Thermal Stability of Atomic Layer Deposited Zr:Al Mixed Oxide Thin Films: An in Situ Transmission Electron Microscopy Study

2005 ◽  
Vol 20 (7) ◽  
pp. 1741-1750
Author(s):  
L.C. Nistor ◽  
O. Richard ◽  
C. Zhao ◽  
H. Bender ◽  
G. Van Tendeloo
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Thermal Stability ◽  
Transmission Electron Microscopy ◽  
Atomic Layer ◽  
Silicon Surfaces ◽  
Transmission Electron ◽  
Thermal Stability Of

The thermal stability of amorphous Zr:Al mixed oxide films of different composition, produced on (001) silicon wafers by the atomic layer deposition method is studied by transmission electron microscopy during in situ heating experiments. The temperatures at which phase separation and crystallization occur are composition dependent. The crystallization of thick films (55–70 nm), deposited on HF-treated silicon surfaces covered with a 15 cycles Al2O3 layer, results in the formation of cubic ZrO2 and cubic γ–Al2O3. In very thin films (5 nm), deposited on silicon surfaces covered with a 0.5 nm SiO2 thin film, the formation of tetragonal zirconium disilicide (ZrSi2) is observed in the microscope vacuum, at temperatures above 900 °C. This effect depends on the thickness of the as deposited thin film.

Epitaxy and texture analysis of Bi-Sr-Ca-Cu-O thin films on (100) MgO using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 68-69
Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Critical Currents ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
Cell Axis ◽  
Transmission Electron ◽  
Synthesis Procedure

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).

Microstructure of Thin Film Photoconductors and its Correlation with Optical and Electronic Properthss

1996 ◽  
Vol 452 ◽  
Author(s):  
U. Klement ◽  
D. Horst ◽  
F. Ernst
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Transmission Electron ◽  
Electronic Eye

AbstractThe objective of this work is to find a material to replace amorphous hydrogenated silicon used as photosensitive part in the “retina” of an “electronic eye”. For that reason, ZnS, ZnSe, CdS and CdSe were chosen for investigations. Thin films, prepared by chemical vapour deposition, were characterized by transmission electron microscopy. The observed microstructures were correlated with the optoelectronic properties of these materials. CdSe was found to be the most promising material for our application. Hence, the influence of a dielectric interlayer and the effects of additional annealing treatments were analyzed for CdSe and will be discussed with respect to the optimization of the material.

scholarly journals Imaging of Magnetic Textures in Polycrystalline FeGe Thin Films via in-situ Lorentz Transmission Electron Microscopy

2020 ◽  
Vol 26 (S2) ◽  
pp. 1700-1702
Author(s):  
Nuria Bagues ◽  
Binbin Wang ◽  
Tao Liu ◽  
Camelia Selcu ◽  
Stephen Boona ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Transmission Electron ◽  
Lorentz Transmission Electron Microscopy

Hydrogen Absorption of Palladium Thin Films Observed by in Situ Transmission Electron Microscopy with an Environmental Cell

2016 ◽  
Vol 8 (23) ◽  
pp. 14548-14551 ◽  
Author(s):  
Tengfei Zhang ◽  
Yuki Nakagawa ◽  
Takenobu Wakasugi ◽  
Shigehito Isobe ◽  
Yongming Wang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Hydrogen Absorption ◽  
Transmission Electron ◽  
Environmental Cell
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