Epitaxy and texture analysis of Bi-Sr-Ca-Cu-O thin films on (100) MgO using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 68-69
Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Critical Currents ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
Cell Axis ◽  
Transmission Electron ◽  
Synthesis Procedure

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).

Limitations to the use of Sb as a Surfactant During SiGe MBE

1998 ◽  
Vol 533 ◽  
Author(s):  
Glenn G. Jernigan ◽  
Conrad L. Silvestre ◽  
Mohammad Fatemi ◽  
Mark E. Twigg ◽  
Phillip E. Thompson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Quantum Well ◽  
Photoelectron Spectroscopy ◽  
Surface Coverage ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Alloy Concentration

AbstractThe use of Sb as a surfactant in suppressing Ge segregation during SiGe alloy growth was investigated as a function of Sb surface coverage, Ge alloy concentration, and alloy thickness using xray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy. Unlike previous studies where Sb was found to completely quench Ge segregation into a Si capping layer, we find that Sb can not completely prevent Ge segregation while Si and Ge are being co-deposited. This results in the production of a non-square quantum well with missing Ge at the beginning and extra Ge at the end of the alloy. We also found that Sb does not relieve strain in thin films but does result in compositional or strain variations within thick alloy layers.

In situ x-ray study of the γ- to α-Al2O3 phase transformation during atmospheric pressure oxidation of NiAl(110)

2006 ◽  
Vol 21 (12) ◽  
pp. 3047-3057 ◽  
Author(s):  
A. Vlad ◽  
A. Stierle ◽  
N. Kasper ◽  
H. Dosch ◽  
M. Rühle
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Orientation Relationship ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Oxidation In Air ◽  
Α Al2o3 ◽  
Underlying Substrate

The oxidation in air of NiAl(110) was investigated in the temperature range from 870 °C–1200 °C by in situ x-ray diffraction and transmission electron microscopy. Oxidation at 870 °C and 1 bar oxygen leads to the formation of an epitaxial layer of γ-alumina showing an R30° orientation relationship with respect to the underlying substrate. At oxidation temperatures between 950 °C and 1025 °C, we observed a coexistence of epitaxial γ- and polycrystalline δ-Al2O3. The α-Al2O3 starts to form at 1025 °C and the complete transformation of metastable phases to the stable α-alumina phase takes place at 1100 °C. The fcc-hcp martensitic-like transformation of the initial γ-Al2O3 to epitaxial α-Al2O3 was observed. X-ray diffraction and cross-section transmission electron microscopy proved the existence of a continuous epitaxial α-Al2O3 layer between the substrate and the polycrystalline oxide scale, having a thickness of about 150 nm. The relative orientation relationship between the epitaxial alumina and the underlying substrate was found to be NiAl(110) || α-Al2O3 (0001) and [110] NiAl || [1120].

TEM Study of FePt and FePt:C/FePt Composite Double-Layered Thin Films

2013 ◽  
Vol 275-277 ◽  
pp. 1952-1955
Author(s):  
Ling Fang Jin ◽  
Xing Zhong Li
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Grain Size ◽  
Magnetic Properties ◽  
Composite Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

New functional nanocomposite FePt:C thin films with FePt underlayers were synthesized by noneptaxial growth. The effect of the FePt layer on the ordering, orientation and magnetic properties of the composite layer has been investigated by adjusting FePt underlayer thickness from 2 nm to 14 nm. Transmission electron microscopy (TEM), together with x-ray diffraction (XRD), has been used to check the growth of the double-layered films and to study the microstructure, including the grain size, shape, orientation and distribution. XRD scans reveal that the orientation of the films was dependent on FePt underlayer thickness. In this paper, the TEM studies of both single-layered nonepitaxially grown FePt and FePt:C composite L10 phase and double-layered deposition FePt:C/FePt are presented.

Sol-gel processing of nanocrystalline haematite thin films

1997 ◽  
Vol 12 (6) ◽  
pp. 1441-1444 ◽  
Author(s):  
L. Armelao ◽  
A. Armigliato ◽  
R. Bozio ◽  
P. Colombo
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Single Particles ◽  
X Ray ◽  
Transmission Electron ◽  
Gel Processing

The microstructure of Fe2O3 sol-gel thin films, obtained from Fe(OCH2CH3)3, was investigated by x-ray diffraction (XRD), transmission electron microscopy (TEM), and Raman spectroscopy. Samples were nanocrystalline from 400 °C to 1000 °C, and the crystallized phase was haematite. In the coatings, the α–Fe2O3 clusters were dispersed as single particles in a network of amorphous ferric oxide.

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