Kinetics of Silicon Oxide Thin Film Deposition From Silane and Disilane with Nitrous Oxide.

1987 ◽  
Vol 105 ◽  
Author(s):  
Jonathan D. Chapple-Sokol ◽  
Carmen J. Giunta ◽  
Roy G. Gordon
Keyword(s):  
Nitrous Oxide ◽  
Silicon Dioxide ◽  
Silicon Oxide ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Oxide Thin Film ◽  
Mechanistic Study ◽  
Chain Reaction ◽  
Kinetics Of ◽  
Homogeneous Decomposition

AbstractA mechanistic study of the deposition of silicon oxide films (SiOx, 0 < x ≤2) from silanes with nitrous oxide was performed. The depositions of non-stoichiometric films from silane and stoichiometric silicon dioxide from disilane were dominated by SiH2 generation from the decomposition of the silicon-containing reactant. The depositions of stoichiometric films from silane were found to follow chain reaction kinetics initiated by the homogeneous decomposition of N2O.

Silicon Oxide Thin Film Deposition on Alumina in a Circulating Fluidized Bed Reactor

2005 ◽  
Vol 277-279 ◽  
pp. 577-582 ◽  
Author(s):  
Sang Min Park ◽  
Soon Hwa Jung ◽  
Soung Hee Park ◽  
Sang Done Kim
Keyword(s):  
Fluidized Bed ◽  
Silicon Oxide ◽  
Circulating Fluidized Bed ◽  
Surface Composition ◽  
Fluidized Bed Reactor ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Discharge Power ◽  
Oxide Thin Film ◽  
Alumina Powder

Silicon oxide deposition on fine alumina powders by plasma-enhanced chemical vapor deposition (PECVD) at atmospheric pressure was carried out in a circulating fluidized bed reactor. To deposit silicon oxide on alumina powders, the organo-silicon source precursors (tetraethoxysilane (TEOS) and hexamethyldisiloxane (HMDSO)) and oxygen were used as the reactant gases while helium and argon were used as the dilute gases. The surface property of plasma-treated alumina powder varies from hydrophobic to hydrophilic in the surface composition with variation of the discharge power. In oxygen-containing atmospheres, chemical composition of the deposited film is more inorganic with increasing the discharge power and the flow ratio of O2/precursor for both organo-silicon precursors.

MOCVD of Niobium Nitrides and Oxy-Nitrides using an All-Nitrogen-Coordinated Precursor: Thin-film Deposition and Mechanistic Study

2019 ◽  
Vol 16 (5) ◽  
pp. 235-242 ◽  
Author(s):  
Daniela Bekermann ◽  
Davide Barreca ◽  
Anjana Devi ◽  
Alberto Gasparotto ◽  
Roland Fischer
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Mechanistic Study ◽  
Niobium Nitrides ◽  
Precursor Thin Film

Technology of metal oxide thin film deposition with interruptions

2007 ◽  
Vol 202 (3) ◽  
pp. 453-459 ◽  
Author(s):  
V. Khatko ◽  
J. Calderer ◽  
S. Vallejos ◽  
E. Llobet ◽  
X. Correig
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Oxide Thin Film ◽  
Metal Oxide Thin Film

Localized Laser-Assisted Deposition of Silicon,Silicon Nitride and Silicon Dioxide

1987 ◽  
Vol 101 ◽  
Author(s):  
Geoffrey Auvert ◽  
Yves Pauleau ◽  
Didier Tonneau
Keyword(s):  
Growth Rate ◽  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Silicon Oxide ◽  
Unsolved Problem ◽  
Experimental Conditions ◽  
Formation Kinetics ◽  
Silicon Based ◽  
Kinetics Of ◽  
Silicon Silicon

ABSTRACTThe localized laser-induced deposition of an insulator for silicon-based microelectronics seems to be an unsolved problem. In order to understand the limiting mechanism in the deposition, the formation kinetics of silicon, silicon oxide and silicon nitride using various laser wavelengths and gas mixtures have been studied Depending upon wavelength and laser-induced temperature, various chemical reactions are involved. In the presence of ammonia, the growth rate of silicon nitride dots was found to be lower than the corresponding silicon deposition rate, indicating that deposition starts with silane decomposition followed by nitridation of silicon. By evaluating the influence of the wavelengths, the existence of a photolytic aided reaction is detected in the presence of 2.4 eV photons. In the presence of oxygen molecules and under most experimental conditions, no deposition occurs. The formation of volatile intermediate compounds can explain the difficulty of locally depositing silicon dioxide.

Copper–cobalt heterobimetallic ceramic oxide thin film deposition: Synthesis, characterization and application of precursor

2008 ◽  
Vol 11 (10) ◽  
pp. 1159-1161 ◽  
Author(s):  
Mazhar Hamid ◽  
Asif Ali Tahir ◽  
Muhammad Mazhar ◽  
Kieran C. Molloy ◽  
Gabriele Kociok-Köhn
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Oxide Thin Film ◽  
Ceramic Oxide
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