Localized Laser-Assisted Deposition of Silicon,Silicon Nitride and Silicon Dioxide

ABSTRACTThe localized laser-induced deposition of an insulator for silicon-based microelectronics seems to be an unsolved problem. In order to understand the limiting mechanism in the deposition, the formation kinetics of silicon, silicon oxide and silicon nitride using various laser wavelengths and gas mixtures have been studied Depending upon wavelength and laser-induced temperature, various chemical reactions are involved. In the presence of ammonia, the growth rate of silicon nitride dots was found to be lower than the corresponding silicon deposition rate, indicating that deposition starts with silane decomposition followed by nitridation of silicon. By evaluating the influence of the wavelengths, the existence of a photolytic aided reaction is detected in the presence of 2.4 eV photons. In the presence of oxygen molecules and under most experimental conditions, no deposition occurs. The formation of volatile intermediate compounds can explain the difficulty of locally depositing silicon dioxide.

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Single Backside Cleaning on Silicon, Silicon Nitride and Silicon Oxide

Solid State Phenomena - Ultra Clean Processing of Silicon Surfaces VII ◽

10.4028/3-908451-06-x.249 ◽

2005 ◽

pp. 249-254

Author(s):

Lucile Broussous ◽

Pascal Besson ◽

M.M. Frank ◽

D. Bourgeat

Keyword(s):

Silicon Nitride ◽

Silicon Oxide ◽

Silicon Silicon

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Atomic Precision Device Fabrication Using Cyclic Self-Limiting Plasma Processes: Involving Silicon, Silicon Nitride, and Silicon Dioxide

IEEE Nanotechnology Magazine ◽

10.1109/mnano.2019.2941035 ◽

2019 ◽

Vol 13 (6) ◽

pp. 8-20

Author(s):

Peter L.G. Ventzek ◽

Toshihiko Iwao ◽

Alok Ranjan

Keyword(s):

Silicon Nitride ◽

Silicon Dioxide ◽

Device Fabrication ◽

Atomic Precision ◽

Precision Device ◽

Silicon Silicon

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Kinetics of Silicon Oxide Thin Film Deposition From Silane and Disilane with Nitrous Oxide.

MRS Proceedings ◽

10.1557/proc-105-127 ◽

1987 ◽

Vol 105 ◽

Cited By ~ 1

Author(s):

Jonathan D. Chapple-Sokol ◽

Carmen J. Giunta ◽

Roy G. Gordon

Keyword(s):

Nitrous Oxide ◽

Silicon Dioxide ◽

Silicon Oxide ◽

Thin Film Deposition ◽

Film Deposition ◽

Oxide Thin Film ◽

Mechanistic Study ◽

Chain Reaction ◽

Kinetics Of ◽

Homogeneous Decomposition

AbstractA mechanistic study of the deposition of silicon oxide films (SiOx, 0 < x ≤2) from silanes with nitrous oxide was performed. The depositions of non-stoichiometric films from silane and stoichiometric silicon dioxide from disilane were dominated by SiH2 generation from the decomposition of the silicon-containing reactant. The depositions of stoichiometric films from silane were found to follow chain reaction kinetics initiated by the homogeneous decomposition of N2O.

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TEM Imaging of Amorphous Silicon Oxide - Silicon Nitride - Silicon Oxide Dielectric Films

Microscopy and Microanalysis ◽

10.1017/s1431927600032219 ◽

2001 ◽

Vol 7 (S2) ◽

pp. 1228-1229

Author(s):

Lew Rabenberg ◽

J. P. Zhou ◽

Kil-Soo Ko ◽

Rita Johnson

Keyword(s):

Thin Films ◽

Silicon Nitride ◽

Amorphous Silicon ◽

Atomic Number ◽

Silicon Oxide ◽

Gate Dielectrics ◽

Dielectric Films ◽

Amorphous Silicon Oxide ◽

Nitride Oxide ◽

Silicon Based

Thin films of amorphous silicon oxide and silicon nitride are routinely used as gate dielectrics in silicon-based microelectronic devices. It is valuable to be able to image them and measure their thicknesses quickly and accurately. This brief note describes conditions that can be used to obtain accurate and reproducible TEM images of oxide-nitride-oxide (ONO) thin films.Obtaining adequate contrast differences between oxide and nitride is not trivial because they have the same average atomic number, and both phases are amorphous. As stoichiometric compounds, both SiO2 and Si3N4 would have average atomic numbers equal to 10. For SiO2, (14+2(8))/3=10, and for Si3N4, (3(14)+4(7))/7=10. Thus, the atomic number contrast between these two is weak or nonexistent. Similarly, the amorphous character prevents the use of conventional diffraction contrast techniques.However, the density of Si3N4 (3.2 g/cm3) is considerably greater than the density of SiO2 (2.6 g/cm3), reflecting the higher average coordination of N compared with O.

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Low Teperature Synthesis of Silicon Oxide and Oxynitride Films by Reactive Laser Ablation

MRS Proceedings ◽

10.1557/proc-285-319 ◽

1992 ◽

Vol 285 ◽

Cited By ~ 5

Author(s):

E. Fogaassy ◽

C. Fuchs ◽

A. Slaoui ◽

S. De unamumo ◽

J.-P. Stoquert ◽

...

Keyword(s):

Silicon Nitride ◽

Laser Ablation ◽

Low Temperature ◽

Silicon Oxide ◽

Silicon Monoxide ◽

Fused Silica ◽

Excimer Laser Ablation ◽

Arf Excimer Laser ◽

Silicon Silicon ◽

Specific Influence

ABSTRACTSilicon oxide and oxynitride films are deposited, at low temperature (≤ 450°C) by pulsed ArF excimer laser ablation from silicon, silicon monoxide, fused silica and silicon nitride targets, performed under vacuum and in oxygen atmosphere. We investigate in this paper the specific influence of laser fluence, target materials, substrate temtperature and oxygen pressure on the composition and final properties of SiOxNy grown layers. The synthesis of good quality SiO2 films is demonstratedx. By contrast, the preparation of stoichiometric Si7N4 layers by laser ablation has to be optimized.

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