THE INFLUENCE OF SYNTHESIZING TEMPERATURES ON THE PROPERTIES OF THE Cu/Sn/ZnS PRECURSOR THIN FILMS

Cu 2 ZnSnS 4 thin films were prepared on soda-lime glass by sulfurization of the Cu / Sn / ZnS precursors. The microstructure, morphology and optical properties of the films were investigated by X-ray diffraction (XRD), Raman scattering (Raman), scanning electron microscopy (SEM) and UV-visible spectrophotometer (UV-Vis). The SEM images of the precursor and the thin films annealed at different temperatures are very different due to their different surface products. The absorption spectrum shifts to high-wave band region with increasing annealing temperatures. The precursor thin film annealed at 500°C for 2 h forms a single CZTS phase with kesterite structure and the bandgap is estimated to be 1.54 eV.