Magnetic Resonance in Hydrogenated Nanocrystalline Silicon Thin Films

2008 ◽  
Vol 1066 ◽  
Author(s):  
Tining Su ◽  
Tong Ju ◽  
Baojie Yan ◽  
Jeffrey Yang ◽  
Subhendu Guha ◽  
...  

ABSTRACTWe have investigated the localized electronic states in mixed-phase hydrogenated nanocrystalline silicon thin films (nc-Si:H) with electron-spin-resonance (ESR). The dark ESR signal most likely arises from defects at the grain boundaries or within the crystallites. With illumination with photon energies ranging from 1.2 eV to 2.0 eV, there is no evidence of photo-induced carriers trapped in the bandtail states within the amorphous region. Dependence of the light-induced ESR (LESR) upon the exciting photon energy reveals that, at different excitation photon energies, different regions dominate the optical absorption. This behavior may have potential consequences for understanding the light-induced degradation in nc-Si:H.

2010 ◽  
Vol 1245 ◽  
Author(s):  
Lee Wienkes ◽  
Aaron Besaw ◽  
Curtis Anderson ◽  
David Bobela ◽  
Paul Stradins ◽  
...  

AbstractThe conductivity of amorphous/nanocrystalline hydrogenated silicon thin films (a/nc-Si:H) deposited in a dual chamber co-deposition system exhibits a non-monotonic dependence on the nanocrystal concentration. Optical absorption measurements derived from the constant photocurrent method (CPM) and preliminary electron spin resonance (ESR) data for similarly prepared materials are reported. The optical absorption spectra, in particular the subgap absorption, are found to be independent of nanocrystalline density for relatively small crystal fractions (< 4%). For films with a higher crystalline content, the absorption spectra indicate broader Urbach slopes and higher midgap absorption. The ESR spectra show an approximately constant defect density across all of the films. These data are interpreted in terms of a model involving electron donation from the nanocrystals into the amorphous material.


2013 ◽  
Vol 102 (12) ◽  
pp. 121107
Author(s):  
Rong Zhang ◽  
Xinyi Chen ◽  
Wenzhong Shen

2010 ◽  
pp. NA-NA
Author(s):  
Toshihiko Toyama ◽  
Masanori Kurihara ◽  
Yasushi Sobajima ◽  
Hiroaki Okamoto ◽  
Satoshi Takahashi ◽  
...  

2008 ◽  
Author(s):  
Fatiha Besahraoui ◽  
Jamal Dine Sib ◽  
Yahia Bouizem ◽  
Larbi Chahed ◽  
B. G. Sidharth ◽  
...  

1998 ◽  
Vol 536 ◽  
Author(s):  
A. B. Pevtsov ◽  
N. A. Feoktistov ◽  
V. G. Golubev

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.


2020 ◽  
Vol 2 (3) ◽  
Author(s):  
Lukas Terkowski ◽  
Iain W. Martin ◽  
Daniel Axmann ◽  
Malte Behrendsen ◽  
Felix Pein ◽  
...  

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