Buried Silicon-Nitride by High Temperature Nitrogen Implantation

1987 ◽  
Vol 107 ◽  
Author(s):  
U. Bussmann ◽  
F.H.J. Meerbach ◽  
E.H. Te Kaat
Keyword(s):  
High Temperature ◽  
Silicon Nitride ◽  
Electron Diffraction ◽  
Amorphous Material ◽  
Subsequent Annealing ◽  
High Dose ◽  
Nitrogen Implantation ◽  
Tem Analysis ◽  
Amorphous Si ◽  
Nitride Layers

AbstractBuried silicon nitride layers are formed by high temperature (600-800°C), high dose (0.3-1 x 1018 Ncm -2) nitrogen implantation into silicon. The nitride structure of as-implanted and annealed (6 h at 1200°C) samples is revealed by TEM-analysis. At implantation temperatures up to 600°C an amorphous SixN" layer is formed. At higher temperatures crystalline precipitates are found within an amorphous environment. They are identified as β-Si3N4 by electron diffraction. By subsequent annealing the previously amorphous material crystallizes to a-Si3N4, while the β-grains seem to be stable.

Defect Structure at Buried Silicon Nitride Layers

1985 ◽  
Vol 45 ◽  
Author(s):  
E.H. Te Kaat ◽  
J. Belz
Keyword(s):  
Silicon Nitride ◽  
Low Dose ◽  
Electronic Devices ◽  
High Dose ◽  
Local Defect ◽  
Defect Structures ◽  
Rectangular Profile ◽  
The Common ◽  
Nitride Layers ◽  
Spherulitic Structure

ABSTRACTBuried insulating silicon nitride layers are formed by a 400°C N+-implantation at 150 keV with fluences from 0.35 to 1×1018 N+/cm2 and subsequent anneal at 1200°C in dry nitrogen. TEM and AES measurements on bevelled samples yield a correlation of ion and damage profiles to local defect structures. Low dose implantation results in polycrystalline precipitates of scaled spherulitic structure. High dose continuous polycrystalline nitride layers have good insulation properties following a 5 hour anneal. During anneal, the common asymmetrical ion depth profile transforms to a nearly rectangular profile. The silicon surface layer contains 106 to 108 dislocations/cm2, which seem to be passivated, since detrimental effects on electronic devices have not been measured.

The Role of Implant Temperature in the Formation of Thin Buried Oxide Layers

1986 ◽  
Vol 74 ◽  
Author(s):  
Alice E. White ◽  
K. T. Short ◽  
L. N. Pfeiffer ◽  
K. W. West ◽  
J. L. Batstone
Keyword(s):  
High Temperature ◽  
Crystalline Material ◽  
High Dose ◽  
Si Substrate ◽  
High Temperature Anneal ◽  
Damage Structure ◽  
Amorphous Si ◽  
Substrate Temperatures

AbstractFrom the early work on high dose oxygen implantation for buried SiO2 formation, it is apparent that the temperature of the Si substrate during the implant has a strong influence on the quality of both the SiO2 layer and the overlying Si. This, in turn, can be related to the damage from the oxygen implant. For substrate temperatures < ∼ 300°C, amorphous Si is created during the implant and leads to the formation of twins or polycrystalline Si during the subsequent high temperature (>1300°C) anneal. At higher substrate temperatures (<∼400°C), dynamic annealing eliminates the amorphous Si, but the implanted oxygen appears to segregate during the implant leading to oxygen-rich amorphous regions imbedded in regions of crystalline material. As the amorphous regions start to coalesce and form SiO2 during the high temperature anneal, they trap crystalline Si which cannot escape by diffusion. This process can be circumvented by using a randomizing Si implant to change the damage structure from the oxygen implant before annealing. We have seen these effects clearly in sub-stoichiometric implants, and believe they are also operative during stoichiometric implants.

Formation of silicon nitride compound layers by high‐dose nitrogen implantation

1980 ◽  
Vol 51 (3) ◽  
pp. 1605-1610 ◽  
Author(s):  
T. Tsujide ◽  
M. Nojiri ◽  
H. Kitagawa
Keyword(s):  
Silicon Nitride ◽  
High Dose ◽  
Nitrogen Implantation

Lateral Confinement of Silicide Layers Synthesized with High Dose Implantation and Annealing

1989 ◽  
Vol 147 ◽  
Author(s):  
Alice E. White ◽  
K. T. Short ◽  
S. D. Berger ◽  
H. A. Huggins ◽  
D. Loretto
Keyword(s):  
Electron Beam ◽  
High Temperature ◽  
Electron Beam Lithography ◽  
High Dose ◽  
Induced Current ◽  
High Temperature Annealing ◽  
Tem Analysis ◽  
Resolution Electron ◽  
Electron Beam Induced Current ◽  
High Dose Implantation

AbstractUsing mesotaxy, a technique which involves high dose implantation followed by high temperature annealing, we have created narrow wires of CoSi2 buried beneath the surface of a silicon wafer. The implantation masks are fabricated directly on the silicon substrate using high resolution electron beam lithography in combination with reactive ion etching. TEM analysis shows that the wires are single-crystal and oriented with the substrate with very abrupt interfaces. The electrical continuity of the wires has been confirmed with electron-beam-induced current measurements.

Lattice Imaging of Grain Boundaries in Ceramics

1977 ◽  
Vol 35 ◽  
pp. 114-115
Author(s):  
D. R. Clarke ◽  
G. Thomas
Keyword(s):  
Mechanical Properties ◽  
High Temperature ◽  
Silicon Nitride ◽  
Grain Boundaries ◽  
High Temperature Strength ◽  
Current Interest ◽  
Lattice Imaging ◽  
Special Significance ◽  
Structural Applications ◽  
Refractory Ceramics

Grain boundaries have long held a special significance to ceramicists. In part, this has been because it has been impossible until now to actually observe the boundaries themselves. Just as important, however, is the fact that the grain boundaries and their environs have a determing influence on both the mechanisms by which powder compaction occurs during fabrication, and on the overall mechanical properties of the material. One area where the grain boundary plays a particularly important role is in the high temperature strength of hot-pressed ceramics. This is a subject of current interest as extensive efforts are being made to develop ceramics, such as silicon nitride alloys, for high temperature structural applications. In this presentation we describe how the techniques of lattice fringe imaging have made it possible to study the grain boundaries in a number of refractory ceramics, and illustrate some of the findings.

Sign in / Sign up

Export Citation Format

Share Document