Epitaxial Growth of Highly Crystallized InSb films on Si Substrate by MBE and Their Devices Properties

2009 ◽  
Vol 1194 ◽  
Author(s):  
Yoshihisa Kunimi ◽  
Hiromi Fujita ◽  
Ayano Sakurai ◽  
Shinichiro Akiyama ◽  
Masatoshi Miyahara ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Film Growth ◽  
Wafer Surface ◽  
Cluster Beam ◽  
Si Substrate ◽  
Hydrogen Atoms ◽  
Rocking Curve ◽  
Hall Element ◽  
Si Wafer

AbstractHigh crystallized thin InSb epitaxial growth directly on Si substrate was investigated by molecular-beam epitaxy (MBE). Experimental results indicated that suppressing the desorption of hydrogen atoms which terminated the dangling bonds of Si wafer surface and incorporation of As around the interface between film and Si substrate were the most important to obtained high crystallized InSb film. It could be achieved by the irradiation of As4 cluster beam onto the Si wafer just before film growth. Obtained thin InSb film showed mirror like surface, and its thickness was 0.7 μm. Its electron mobility was 47,600 cm2/V-s, and FWHM of HR-XRD rocking curve was about 300 arcsec. This InSb film on Si wafer was applied to Hall element, and it passed ordinary reliability tests.

Thin Film Deposition and Growth Processes by Ionized Cluster Beams

1990 ◽  
Vol 206 ◽  
Author(s):  
I. Yamada ◽  
G.H. Takaoka ◽  
H. Usui ◽  
S.K. Koh
Keyword(s):  
Thin Film ◽  
Cluster Size ◽  
Molecular Beam ◽  
Film Growth ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Atomic Scale ◽  
Cluster Beam ◽  
Film Nucleation ◽  
Cluster Beams

ABSTRACTAtomic scale imaging by STM and TEM of the initial stages of film growth of Ag and Au on graphite substrates indicate that the film nucleation processes are markedly different for ionized cluster beam (ICB) and molecular beam (MBE) deposition. Recent results on measurements of cluster size and formation of epitaxial metal-semiconductor layers by ICB are also discussed.

Si substrate treatment with nitrogen for molecular beam epitaxial growth of ZnSe

1998 ◽  
Vol 34 (18) ◽  
pp. 1791 ◽  
Author(s):  
V.H. Méndez-García ◽  
M. López-López
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Si Substrate ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of GaN thin film on Si substrate with InN as interlayer

2006 ◽  
Vol 294 (2) ◽  
pp. 197-201 ◽  
Author(s):  
F.R. Hu ◽  
K. Ochi ◽  
Y. Zhao ◽  
B.S. Choi ◽  
K. Hane
Keyword(s):  
Thin Film ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Si Substrate ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Selective Formation of Graphene on a Si Wafer

2012 ◽  
Vol 1407 ◽  
Author(s):  
Naili Yue ◽  
Yong Zhang ◽  
Raphael Tsu
Keyword(s):  
Molecular Beam ◽  
Optoelectronic Devices ◽  
Optical Characterization ◽  
Ambient Condition ◽  
Fullerene C60 ◽  
Si Substrate ◽  
Graphene Layers ◽  
Selective Formation ◽  
Sic Film ◽  
Si Wafer

ABSTRACTWe report a technique that can, in principle, selectively convert SiC into graphene at any location and in any size or shape, limited only by the ability of the available lithographic techniques. This technique relies on our discovery that, at ambient condition, a laser beam can convert SiC into graphene layers at the illuminated site, and the conversion can be realized in two ways. One can pattern the SiC film, which is already grown on a Si wafer, with desirable features and then illuminate the SiC film with the laser, or simply “write” the graphene features directly onto the unpatterned SiC film with the laser. Alternatively, one can pre-pattern the Si substrate to achieve selective growth of SiC, then perform the laser conversion. We have demonstrated the feasibility of both approaches. Fullerene (C60) was used to grow a thin SiC film on a Si (111) substrate using molecular beam epitaxy (MBE) at 700-800 oC. The results are verified by various structural, chemical and optical characterization techniques. This work yields the possibility of fabricating graphene based (electronic) nanostructures or superlattices, photonic crystals, and integrated electronic and optoelectronic devices on a large Si wafer.

Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (111)-oriented Si substrate toward UV-detector applications

2005 ◽  
Vol 278 (1-4) ◽  
pp. 288-292 ◽  
Author(s):  
Kazuto Koike ◽  
Kenji Hama ◽  
Ippei Nakashima ◽  
Gen-you Takada ◽  
Ken-ichi Ogata ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Wide Bandgap ◽  
Si Substrate ◽  
Uv Detector ◽  
Alloy Films ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of ZnS on a (100)-oriented Si substrate

1987 ◽  
Vol 81 (1-4) ◽  
pp. 73-78 ◽  
Author(s):  
Meiso Yokoyama ◽  
Ko-ichi Kashiro ◽  
Shin-ichi Ohta
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Si Substrate ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

MBE Growth of GaAs on an Exactly (001)-Oriented Si Substrate and Selective Epitaxial Growth for Fabrication of Modulation-Doped Fet's

1988 ◽  
Vol 126 ◽  
Author(s):  
H. Noge ◽  
H. Kano ◽  
M. Hashimoto ◽  
I. Igarashi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Hall Mobility ◽  
Molecular Beam ◽  
Gaas Layer ◽  
Si Substrate ◽  
Mbe Growth ◽  
Si Substrates ◽  
Selective Epitaxial Growth ◽  
Antiphase Domains

ABSTRACTGaAs layers free of antiphase domains (APD's) have been grown by molecular beam epitaxy (MBE) on nominally (001)-oriented Si substrates. This is achieved by preheating the substrates at 950°C over 60 min or at 1000°C over 5 min in an ultrahigh vacuum. The maximum Hall mobility at 293 K is 5300 cm2/Vs for the APD-free GaAs layer doped with Si at a concentration of 2×1016 cm−3. Selective epitaxial growth of GaAs has been carried out on a Si substrate pattrened with SiO2, which was formed by wet O2 oxidation. By choosing an appropriate thickness of the SiO2 layer, thzxcSe warpage of wafers can be reduced to zero. While single-crystalline GaAs is grown on Si-exposed areas, highly-resistive (p ≧ 105 Ωcm) poly-crystalline GaAs is deposited on SiO2. This technique has been successfully applied for the device isolation of modulation-doped FET's (MODFET's, HEMT's, etc.) on Si without mesa-etching. The transconductance of the MODFET with a 3 μm-long gate reaches 88 mS/mm at 293 K.

Effects of Sodium Carbonate and Ceria Concentration on Chemo-Mechanical Grinding of Single Crystal Si Wafer

2009 ◽  
Vol 76-78 ◽  
pp. 428-433 ◽  
Author(s):  
H. Takahashi ◽  
Y.B. Tian ◽  
J. Sasaki ◽  
Jun Shimizu ◽  
Li Bo Zhou ◽  
...  
Keyword(s):  
Single Crystal ◽  
Sodium Carbonate ◽  
Low Cost ◽  
Wafer Surface ◽  
Si Substrate ◽  
Mechanical Grinding ◽  
Grinding Performance ◽  
Si Wafer

Chemo-mechanical grinding (CMG) process is a promising process for large-sized Si substrate fabrication at low cost. An encountered issue in current CMG process of Silicon (Si) wafers is metallic contaminations on ground Si wafer surface, which is attributed to the existence of sodium carbonate in wheel compounds. In this paper, four different CMG wheels were developed and grinding experiments were conducted to study the effects of exclusion of sodium carbonate and concentration of ceria abrasive on grinding performance. The grinding characteristics of the four wheels were analysized and discussed to reveal the effects of different compositions.

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