Influence of Phosphorus Dopant Concentration on Recrystallization of Buried Amorphous Layers in SI(100) Produced by Channeled Implants

ABSTRACTBuried amorphous layers are produced in Si(100) by implantation of 100 keV P+ and Si+ ions under channeling condition along the <100>-direction. Rutherford Backscattering Spectrometry in combination with channeling shows that a continuous buried amorphous. layer with a thickness of 1300 Å results under a crystalline toplayer with a thickness of 600 Å. After Solid Phase Epitaxy a highly concentrated defect layer remains for all implants at the depth where the two amorphous/crystalline interfaces of the buried amorphous layer meet. Planar channeling along (100)-direction shows that dislocation loops are present after SPE regrowth at the ‘interface’ of the two crystalline regions for all implants. The size of the dislocation loops becomes smaller in the presence of phosphorus. Moreover, channeling analysis shows that in case of Rapid Thermal Annealing treatment in addition to the SPE regrowth process the defect structures present after full recrystallization can be more easily dissolved in case of the phosphorus implants as compared to the silicon self implant