By the methods of Auger-spectroscopy and mass-spectrometry of secondary ions, small-angle electron diffraction, X-ray and resistometry analyses the solid-state reactions in the Ti(5 nm)/ Ni(24 nm)/Si(001) thin film system at annealing in running nitrogen in the temperature interval of 723 – 1273 К are investigated. Regularities of phase transformations, consistency of solid-state reactions, layer-by-layer redistribution of components during annealing, features of surface morphology during formation of inclusions of silicide phases are established.
The use of Pt to mark the initial location of heterophase boundaries
in solid-state reactions was extended to investigate the motion of
interfaces during a thin-film solid-state reaction between
In2O3 and MgO in the presence of an electric field.
The Pt markers were prepared by sputtering a thin Pt film onto a
single-crystal substrate. The resulting multilayer was then heated prior
to thin-film deposition to de-wet the Pt film and thus form an array of
small, isolated particles. These particles serve as fine-scale markers for
tracking the motion of interfaces. However, there are certain situations in
which the markers can move with the interface.
Annealing environment effect on the phase formation in Ni(10 nm)/C(2 nm)/Si(001) thin film system produced by sequential sputtering of C and Ni targets without vacuum breaking was under investigation. The specimens were annealed 30 s in vacuum of 1.3·10-4 Pa and in nitrogen flow in the temperature range of 450 - 1000°C. The temperature stimulated solid-state reactions that occur as the result of interdiffusion processes between layers of the thin film system under investigations were examined by X-ray - and electron diffractions, resistivity measurements and Rutherford backscattering. It was established that an annealing environment has a strong impact on the development of the solid-state reactions in Ni(10 nm)/C(2 nm)/Si(001) thin film system.
Kinetics of solid-state reactions between zirconium thin film and silicon carbide at elevated temperatures