Chemical Effects Induced by Low-Energy Particle Beams in Fluorozirconate Glasses

MRS Proceedings ◽

10.1557/proc-152-143 ◽

1989 ◽

Vol 152 ◽

Author(s):

Giovanni Marletta ◽

Monica Ferraris

Keyword(s):

Glass Network ◽

Low Energy ◽

Energy Particle ◽

Progressive Reduction ◽

Particle Beams ◽

Fluorozirconate Glasses ◽

Chemical Effects ◽

Radiation Induced ◽

Chemical States ◽

Induced Defects

ABSTRACTThe modification of the chemical structure of fluorozirconate glasses (ZBLAN) with Ar ion and atom beams of low energy (2–10 key) has been studied in comparison with the damage produced in the starting polycrystalline ZrF4 and BaF2. A variety of reduced chemical states of Zr is produced in ZrF4 as well as in ZBLAN glasses, including metallic Zr0 state. A strong enhancement of the amount of the metallic Zr formed under irradiation is observed in ZBLAN, while it is present only as trace in the irradiated pure ZrF4 samples. The reported effect is tentatively attributed to the presence of Ba ions in the glass network which could prompt the self-trapping of radiation-induced defects at the Zr sites, involving their progressive reduction

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Poster - Thur Eve - 22: A water calorimeter for low-energy particle beams

Medical Physics ◽

10.1118/1.4894878 ◽

2014 ◽

Vol 41 (8Part2) ◽

pp. 11-11 ◽

Cited By ~ 1

Author(s):

J Renaud ◽

S Rossomme ◽

A Sarfehnia ◽

S Vynckier ◽

J Seuntjens

Keyword(s):

Low Energy ◽

Energy Particle ◽

Particle Beams

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Optimal transport of low energy particle beams

Proceedings Particle Accelerator Conference ◽

10.1109/pac.1995.505540 ◽

2002 ◽

Cited By ~ 1

Author(s):

C.K. Allen ◽

S.K. Guharay ◽

M. Reiser

Keyword(s):

Optimal Transport ◽

Low Energy ◽

Energy Particle ◽

Particle Beams

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Charge Exchange Reactions on Low-Energy Particle Beams

Bulletin of the Russian Academy of Sciences Physics ◽

10.3103/s1062873820040280 ◽

2020 ◽

Vol 84 (4) ◽

pp. 425-429

Author(s):

N. K. Skobelev ◽

Yu. E. Penionzhkevich ◽

V. Burjan ◽

J. Mrázek

Keyword(s):

Charge Exchange ◽

Low Energy ◽

Exchange Reactions ◽

Energy Particle ◽

Particle Beams

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Profiling of proton beams by fluence scanners

Lithuanian Journal of Physics ◽

10.3952/physics.v61i2.4436 ◽

2021 ◽

Vol 61 (2) ◽

Author(s):

L. Deveikis ◽

J.V. Vaitkus ◽

T. Čeponis ◽

M. Gaspariūnas ◽

V. Kovalevskij ◽

...

Keyword(s):

Proton Beam ◽

Carrier Lifetime ◽

Diagnostic Procedures ◽

Particle Beams ◽

Proton Beams ◽

Profiling Techniques ◽

Radiation Induced ◽

Induced Defects ◽

Mev Protons

Profiling of particle beams is one of the most important diagnostic procedures for operating any kind of accelerator. In this work, the proton beam profilers, based on fluence measurements performed by recording the changes of carrier lifetime in Si material and scintillation intensity of thin GaN layers, caused by radiation induced defects and emission centres, are presented. The beams of penetrative (26 GeV/c) and stopped (1.6 MeV) protons have been examined. It is shown that the penetrative particle regime should be employed to appropriately record 2D fluence distribution profiles. It is also illustrated that the presented profiling techniques can be applied for scanning of other charged (namely, pions) and neutral (neutrons) particle beams.

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Effect of Radiation-Induced Defects Produced by Low-Energy Protons in a Heavily Doped Layer on the Characteristics of n+‒p‒p+ Si Structures

Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques ◽

10.1134/s1027451018030035 ◽

2018 ◽

Vol 12 (3) ◽

pp. 499-503 ◽

Cited By ~ 1

Author(s):

Y. A. Agafonov ◽

N. M. Bogatov ◽

L. R. Grigorian ◽

V. I. Zinenko ◽

A. I. Kovalenko ◽

...

Keyword(s):

Low Energy ◽

Radiation Induced ◽

Heavily Doped ◽

Induced Defects

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Xenon ion irradiation of superconducting YBa2Cu3O7 thin films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100173595 ◽

1990 ◽

Vol 48 (4) ◽

pp. 92-93

Author(s):

H. Watanabe ◽

B. Kabius ◽

B. Roas ◽

K. Urban

Keyword(s):

Defect Formation ◽

Ion Irradiation ◽

High Resolution Electron Microscopy ◽

Structural Disorder ◽

Flux Lines ◽

Pinning Effect ◽

Magnetic Flux Lines ◽

Resolution Electron ◽

Radiation Induced ◽

Induced Defects

Recently it was reported that the critical current density(Jc) of YBa2Cu2O7, in the presence of magnetic field, is enhanced by ion irradiation. The enhancement is thought to be due to the pinning of the magnetic flux lines by radiation-induced defects or by structural disorder. The aim of the present study was to understand the fundamental mechanisms of the defect formation in association with the pinning effect in YBa2Cu3O7 by means of high-resolution electron microscopy(HRTEM).The YBa2Cu3O7 specimens were prepared by laser ablation in an insitu process. During deposition, a substrate temperature and oxygen atmosphere were kept at about 1073 K and 0.4 mbar, respectively. In this way high quality epitaxially films can be obtained with the caxis parallel to the <100 > SrTiO3 substrate normal. The specimens were irradiated at a temperature of 77 K with 173 MeV Xe ions up to a dose of 3.0 × 1016 m−2.

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