New Low-Temperature Growth Method for High-Quality Low-Temperature GaN Layer by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

2012 ◽  
Vol 5 (12) ◽  
pp. 125503 ◽  
Author(s):  
In-Su Shin ◽  
Ke Wang ◽  
Tsutomu Araki ◽  
Euijoon Yoon ◽  
Yasushi Nanishi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Radio Frequency Plasma ◽  
High Quality ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Frequency Plasma ◽  
Growth Method

Two Step Growth of InN Films on Sapphire (0001) Substrates Without Nitridation Process by RF-MBE

2001 ◽  
Vol 693 ◽  
Author(s):  
Tomohiro Yamaguchi ◽  
Yoshiki Saito ◽  
Kenji Kano ◽  
Tomo Muramatsu ◽  
Tsutomu Araki ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Radio Frequency Plasma ◽  
Single Crystalline ◽  
Nitridation Process ◽  
Frequency Plasma ◽  
Step Growth

AbstractInN films were grown on sapphire (0001) substrates by radio-frequency plasma-assisted molecular beam epitaxy. The InN buffer layers deposited at low temperature were either grown on a substrate with nitridation or on a substrate without nitridation. The InN buffer layers on the nitridated substrates were always single crystalline, whereas the buffer layers on non-nitridated substrates were always polycrystalline. However, even without nitridation process, single crystalline InN films could be grown on the polycrystalline InN buffer layers; in this case, the orientation was always [1120] InN//[1120] sapphire epitaxy, which differed from the [1010] InN//[1120] sapphire epitaxy in films grown with nitridation.

Low-temperature growth of high-quality ZnO layers by surfactant-mediated molecular-beam epitaxy

2007 ◽  
Vol 309 (2) ◽  
pp. 158-163 ◽  
Author(s):  
S.H. Park ◽  
H. Suzuki ◽  
T. Minegishi ◽  
G. Fujimoto ◽  
J.S. Park ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
High Quality ◽  
Temperature Growth ◽  
Low Temperature Growth

RF-MBE Growth of InN Dots on N-polar GaN Grown on Vicinal c-plane Sapphire

2004 ◽  
Vol 831 ◽  
Author(s):  
Naoki Hashimoto ◽  
Naohiro Kikukawa ◽  
Song-Bek Che ◽  
Yoshihiro Ishitani ◽  
Akihiko Yoshikawa
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Growth Mechanism ◽  
Molecular Beam ◽  
Lattice Relaxation ◽  
Radio Frequency Plasma ◽  
Mbe Growth ◽  
Frequency Plasma ◽  
Nominal Coverage

ABSTRACTWe have grown InN quantum dots (QDs) on nitrogen-polarity (N-polarity) GaN under-layer by the radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE), and systematically investigated growth mechanism of the InN dots. The InN QDs with the N-polarity could be grown at about 500°C, which was much higher than that of previous reports on InN dots grown by MBE. When the nominal coverage of InN became more than 1 mono-layer (ML), lattice relaxation of InN occurred and high density InN dots were uniformly formed. These results indicated that InN dots were formed by Stranski-Krastanov (S-K) growth mode. For the InN deposition above about 8ML, InN dots tended to coalesce and resulted in remarakable decrease of the dots density.

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