Metalorganic Chemical Vapor Deposition of InP by Pulsing Precursors
Keyword(s):
AbstractWe have grown InP by supplying precursors alternately into the reactor of a metalorganic chemical vapor deposition system. Epitaxial growth has been obtained with a substrate temperature as low as 330 °C. The growth process is mass-transport-limited in the temperature range of 420 to 580 °C. It is kinetic-controlled below 400 °C. At 340 °C, we have achieved monolayer growth in each cycle, i.e., atomic layer epitaxy.
1996 ◽
Vol 35
(Part 1, No. 5A)
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pp. 2749-2753
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1999 ◽
Vol 38
(Part 1, No. 12A)
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pp. 6817-6820
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2000 ◽
Vol 15
(6)
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pp. 1284-1290
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1992 ◽
Vol 125
(1-2)
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pp. 320-328
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