Dynamics of Monolayer Growth in Vapor–Liquid–Solid GaAs Nanowires Based on Surface Energy Minimization

The vapor–liquid–solid growth of III-V nanowires proceeds via the mononuclear regime, where only one island nucleates in each nanowire monolayer. The expansion of the monolayer is governed by the surface energetics depending on the monolayer size. Here, we study theoretically the role of surface energy in determining the monolayer morphology at a given coverage. The optimal monolayer configuration is obtained by minimizing the surface energy at different coverages for a set of energetic constants relevant for GaAs nanowires. In contrast to what has been assumed so far in the growth modeling of III-V nanowires, we find that the monolayer expansion may not be a continuous process. Rather, some portions of the already formed monolayer may dissolve on one of its sides, with simultaneous growth proceeding on the other side. These results are important for fundamental understanding of vapor–liquid–solid growth at the atomic level and have potential impacts on the statistics within the nanowire ensembles, crystal phase, and doping properties of III-V nanowires.

ZnO-Controlled Growth of Monolayer WS2 through Chemical Vapor Deposition

Monolayer tungsten disulfide (2D WS2) films have attracted tremendous interest due to their unique electronic and optoelectronic properties. However, the controlled growth of monolayer WS2 is still challenging. In this paper, we report a novel method to grow WS2 through chemical vapor deposition (CVD) with ZnO crystalline whisker as a growth promoter, where partially evaporated WS2 reacts with ZnO to form ZnWO4 by-product. As a result, a depletion region of W atoms and S-rich region is formed which is favorable for subsequent monolayer growth of WS2, selectively positioned on the silicon oxide substrate after the CVD growth.

Effects of Strategically Placed Water Droplets on Monolayer Growth of Molybdenum Disulfide

Two-dimensional (2D) molybdenum disulfide (MoS2) films with a tunable bandgap hold great promise for next-generation electronic and optoelectronic devices. Synthesis of large areas of high-quality MoS2 monolayers lacks experimental reproducibility. Moreover, the outcome of MoS2 growth by chemical vapor deposition is dependent on several interconnected growth parameters. In this study, we present results of MoS2 monolayer growth by strategically placing water droplets on the growth substrate and/or in the source prior to its loading in the growth chamber. The volume and distribution of water on the growth substrate and in the source had a direct impact on the morphology of the as-grown MoS2. Characterized by scanning electron microscopy (SEM), Raman microscopy, and atomic force microscopy (AFM), the number and size of MoS2 layers as well as its distribution on the growth substrate were found to have a strong dependence on the positioning of the water droplet. This study on MoS2 monolayer growth using water droplets as a promoter provides a simple and reproducible experimental technique enabling growth with high reliability.