Growth of Lattice-Matched ZnSe-ZnS Strained-Layer Superlattices Onto GaAs as An Alternative to ZnSSe Alloys
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ABSTRACTThis paper describes the results of the first attempt to reduce misfit dislocations in epilayers of a wide bandgap II-VI semiconductor on GaAs substrates by utilizing the ZnSe-ZnS strained-layer superlattice (SLS) structure. From a theoretical calculation, SLSs consisting of a 200A-ZnSe and a IOA-ZnS layer in one period can be grown as lattice-matched films to GaAs substrates. It has been found from the photoluminescence measurements and electron-beam-induced-current (EBIC) image observations that the generation of misfit dislocations can be markedly reduced, as expected.
1987 ◽
Vol 26
(Part 2, No. 12)
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pp. L1944-L1946
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1994 ◽
Vol 24
(1-3)
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pp. 78-81
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1989 ◽
Vol 47
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pp. 518-519
1990 ◽
Vol 48
(4)
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pp. 618-619
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