scholarly journals Detection of misfit dislocations at interface of strained Si/Si0.8Ge0.2 by electron-beam-induced current technique

2004 ◽  
Vol 84 (17) ◽  
pp. 3316-3318 ◽  
Author(s):  
X. L. Yuan ◽  
T. Sekiguchi ◽  
S. G. Ri ◽  
S. Ito
1989 ◽  
Vol 148 ◽  
Author(s):  
J.C. Sturm ◽  
X. Xiao ◽  
P.M. Garone ◽  
P.V. Schwartz

ABSTRACTThe electron-beam-induced-current (EBIC) technique has been used to image dislocations and other defects at strained Si: Sil−xGex epitaxial interfaces and in overlying epitaxial layers grown by Limited Reaction Processing. Depending upon the bias conditions and test structure, one can distinguish between interface defects and those in overlying films. We have found that for a low density of misfit dislocations, a high quality (defect-free) overlying epitaxial layer can be grown, but for a high density of dislocations certain line defects propagate upwards in the overlying layers.


1984 ◽  
Vol 55 (7) ◽  
pp. 1129-1131 ◽  
Author(s):  
T. V. Rao ◽  
V. Dutta ◽  
O. S. Sastry ◽  
K. L. Chopra

1987 ◽  
Vol 26 (Part 2, No. 12) ◽  
pp. L1944-L1946 ◽  
Author(s):  
Yoshitaka Kohama ◽  
Yoshio Watanabe ◽  
Yukio Fukuda

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