Binary Optics Microlens Arrays in CdTe.

1990 ◽  
Vol 216 ◽  
Author(s):  
M.B. Stem ◽  
W.F. Delaney ◽  
M. Holz ◽  
K.P. Kunz ◽  
K.R. Maschhoff ◽  
...  
Keyword(s):  
Focal Plane ◽  
Ion Beam ◽  
Spot Size ◽  
Detector Plane ◽  
Optical Elements ◽  
Microlens Arrays ◽  
Ion Beam Etching ◽  
Binary Optics ◽  
Infrared Materials ◽  
First Time

ABSTRACTArrays of miniature focusing optics located at the focal plane can improve the performance of focal plane systems. By more completely collecting the light at the focal plane and concentrating it into a smaller spot size on the detector plane, the photodetector area can be substantially reduced. Increased gamma radiation hardening and noise reduction result from the decrease in photodetector surface area. Binary optics technology, a process for fabricating large arrays of diffractive optical elements, is especially attractive for infrared materials. In this paper, diffractive Fresnel microlens arrays containing over six thousand F/0.9 lenslets are patterned in the surface of CdTe substrates by successive photolithographic and Ar+ ion-beam-etching steps. Results on smaller arrays of monolithically integrated binary-optics lenslets with II-VI detectors, demonstrating enhanced photodetector responsivities, are presented for the first time.

scholarly journals Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers

1998 ◽  
Vol 537 ◽  
Author(s):  
Daniel Hofstetter ◽  
Robert L. Thornton ◽  
Linda T. Romano ◽  
David P. Bour ◽  
Michael Kneissl ◽  
...  
Keyword(s):  
Ion Beam ◽  
Device Fabrication ◽  
Distributed Feedback ◽  
Coupling Scheme ◽  
Optically Pumped ◽  
Ion Beam Etching ◽  
Measurement Results ◽  
Dfb Laser ◽  
First Time

AbstractWe present a device fabrication technology and measurement results of both optically pumped and electrically injected InGaN/GaN-based distributed feedback (DFB) lasers operated at room temperature. For the optically pumped DFB laser, we demonstrate a complex coupling scheme for the first time, whereas the electrically injected device is based on normal index coupling. Threshold currents as low as 1. 1 A were observed in 500 μm long and 10 μm wide devices. The 3rd order grating providing feedback was defined holographically and dry-etched into the upper waveguiding layer by chemically-assisted ion beam etching. Even when operating these lasers considerably above threshold, a spectrally narrow emission (3.5 Å) at wavelengths around 400 nm was seen.

Focal plane arrays mesastructures formation by ion-beam etching

2016 ◽  
Vol 61 (3) ◽  
pp. 324-327
Author(s):  
M. V. Sednev ◽  
K. O. Boltar ◽  
Yu. P. Sharonov ◽  
A. A. Lopukhin
Keyword(s):  
Focal Plane ◽  
Ion Beam ◽  
Focal Plane Arrays ◽  
Ion Beam Etching

Ion Beam Etching of Biological Material in the Scanning Electron Microscope

1969 ◽  
Vol 27 ◽  
pp. 10-11
Author(s):  
Patrick Echlin ◽  
David Kynaston ◽  
Paul M. Knights
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Biological Material ◽  
Ion Beam ◽  
Ion Source ◽  
Ion Beam Etching ◽  
Dynamic Experiments ◽  
First Time ◽  
Scanning Electron

An ion source has been designed to operate in the chamber of the Stereoscan scanning electron microscope and provides facilities for etching specimens in situ. The source is a demountable cold cathode discharge type requiring only simple control.The ion beam described above has been used to progressively etch away hard or resilient biological material. This is the first time that ion beam etching of botanical specimens has been followed inside the scanning microscope, and marks the beginning of a range of dynamic experiments using this form of instrumentation.

scholarly journals Analyzing the Symmetry Properties of a Distribution in the Focal Plane for a Focusing Element with Periodic Angle Dependence of Phase

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Svetlana N. Khonina ◽  
Andrey V. Ustinov
Keyword(s):  
Focal Plane ◽  
Simple Technique ◽  
Focal Spot ◽  
Spot Size ◽  
Diffractive Optical Elements ◽  
Focal Spot Size ◽  
Optical Elements ◽  
Symmetry Properties ◽  
Tight Focusing ◽  
Plane Distribution

We analyze the symmetry properties of the focal plane distribution when light is focused with an element characterized by a periodic angular dependent phase, sin (mφ) or cos (mφ). The majority of wave aberrations can be described using the said phase function. The focal distribution is analytically shown to be a real function at odd values of m, which provides a simple technique for generating designed wave aberrations by means of binary diffractive optical elements. Such a possibility may prove useful in tight focusing, as the presence of definite wave aberrations allows the focal spot size to be decreased. The analytical computations are illustrated by the numerical simulation, which shows that by varying the radial parameters the focal spot configuration can be varied, whereas the central part symmetry is mainly determined by the parity of m: for even the symmetry order is 2m and for odd is m.

Ion beam etching of large aperture diffractive optical elements

2012 ◽  
Vol 20 (8) ◽  
pp. 1676-1683
Author(s):  
邱克强 QIU Ke-qiang ◽  
周小为 ZHOU Xiao-wei ◽  
刘颖 LIU Ying ◽  
徐向东 XU Xiang-dong ◽  
刘正坤 LIU Zheng-kun ◽  
...  
Keyword(s):  
Ion Beam ◽  
Diffractive Optical Elements ◽  
Optical Elements ◽  
Ion Beam Etching ◽  
Large Aperture

scholarly journals Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers

1999 ◽  
Vol 4 (S1) ◽  
pp. 69-74
Author(s):  
Daniel Hofstetter ◽  
Robert L. Thornton ◽  
Linda T. Romano ◽  
David P. Bour ◽  
Michael Kneissl ◽  
...  
Keyword(s):  
Ion Beam ◽  
Device Fabrication ◽  
Distributed Feedback ◽  
Coupling Scheme ◽  
Optically Pumped ◽  
Ion Beam Etching ◽  
Measurement Results ◽  
Dfb Laser ◽  
First Time

We present a device fabrication technology and measurement results of both optically pumped and electrically injected InGaN/GaN-based distributed feedback (DFB) lasers operated at room temperature. For the optically pumped DFB laser, we demonstrate a complex coupling scheme for the first time, whereas the electrically injected device is based on normal index coupling. Threshold currents as low as 1.1 A were observed in 500 μm long and 10 μm wide devices. The 3rd order grating providing feedback was defined holographically and dry-etched into the upper waveguiding layer by chemically-assisted ion beam etching. Even when operating these lasers considerably above threshold, a spectrally narrow emission (3.5 Å) at wavelengths around 400 nm was seen.

Precision aspherization of the surface of optical elements by ion-beam etching

2015 ◽  
Vol 9 (4) ◽  
pp. 765-770 ◽  
Author(s):  
M. V. Zorina ◽  
I. M. Nefedov ◽  
A. E. Pestov ◽  
N. N. Salashchenko ◽  
S. A. Churin ◽  
...  
Keyword(s):  
Ion Beam ◽  
Optical Elements ◽  
Ion Beam Etching

Enhancement of RIE: etched Diffractive Optical Elements surfaces by using Ion Beam Etching

2015 ◽  
Author(s):  
J. Schmitt ◽  
Ch. Bischoff ◽  
U. Rädel ◽  
M. Grau ◽  
U. Wallrabe ◽  
...  
Keyword(s):  
Ion Beam ◽  
Diffractive Optical Elements ◽  
Optical Elements ◽  
Ion Beam Etching
Sign in / Sign up

Export Citation Format

Share Document