Surface Temperatures and Dissociation Loss During the Pulsed Laser Annealing of GaAs

1983 ◽  
Vol 23 ◽  
Author(s):  
John T.A. Pollock ◽  
Alex Rose
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Pressure Data ◽  
Incident Laser ◽  
Time Resolved ◽  
Dissociation Pressure ◽  
Pulsed Laser Annealing ◽  
Modelling Studies ◽  
Maximum Temperatures ◽  
Good Agreement

ABSTRACTFrom reported equilibrium partial and total dissociation pressure data for GaAs and melt times derived from reported time resolved reflectivity experiments, estimates have been made of the anticipated rate of As loss. Good agreement was found with experimentally determined As loss. A similar approach using experimentally determined Ga loss data allowed estimates of the maximum temperatures reached during pulsed laser annealing. These temperatures are considerably higher than suggested in thermal modelling studies. The boiling point of Ga gould be exceeded at incident laser energies >0.8 J cm−2.

Synchrotron X-Ray Study of the Structure of Silicon During Pulsed Laser Processing

1981 ◽  
Vol 4 ◽  
Author(s):  
B. C. Larson ◽  
C. W. White ◽  
T. S. Noggle ◽  
J. F. Barhorst ◽  
D. Mills
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Temperature Profiles ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
Near Surface ◽  
X Ray ◽  
Pulsed Laser Annealing ◽  
Pulsed Laser Processing ◽  
Thermal Melting

ABSTRACTSynchrotron x-ray pulses have been used to make nanosecond resolution time-resolved x-ray diffraction measurements on silicon during pulsed laser annealing. Thermal expansion analysis of near-surface strains during annealing has provided depth dependent temperature profiles indicating >1100°C temperatures and diffraction from boron implanted silicon has shown evidence for near-surface melting. These results are in qualitative agreement with the thermal melting model of laser annealing.

Time-resolved optical measurement of Si lattice temperature during nanosecond pulsed laser annealing

Physica B+C ◽  
1983 ◽  
Vol 117-118 ◽  
pp. 1024-1026 ◽  
Author(s):  
Kouichi Murakami ◽  
Hisayoshi Itoh ◽  
Kōki Takita ◽  
Kohzoh Masuda
Keyword(s):  
Laser Annealing ◽  
Optical Measurement ◽  
Pulsed Laser ◽  
Lattice Temperature ◽  
Time Resolved ◽  
Pulsed Laser Annealing ◽  
Nanosecond Pulsed Laser

Time-resolved conductance and reflectance measurements of silicon during pulsed-laser annealing

1983 ◽  
Vol 27 (2) ◽  
pp. 1079-1087 ◽  
Author(s):  
G. J. Galvin ◽  
Michael O. Thompson ◽  
J. W. Mayer ◽  
P. S. Peercy ◽  
R. B. Hammond ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Time Resolved ◽  
Pulsed Laser Annealing ◽  
Reflectance Measurements

Surface Electromagnetic Waves in Laser Material Interactions

1982 ◽  
Vol 13 ◽  
Author(s):  
D. J. Ehrlich ◽  
S. R. J. Brueck ◽  
J. Y. Tsao
Keyword(s):  
Electromagnetic Waves ◽  
Laser Annealing ◽  
Semiconductor Materials ◽  
Surface Polariton ◽  
Time Resolved ◽  
Ripple Formation ◽  
Pulsed Laser Annealing ◽  
Surface Electromagnetic Waves ◽  
Ripple Patterns ◽  
Good Agreement

ABSTRACTTransient ripple formation in pulsed laser annealing of semiconductor materials is shown to arise from amplified surface polariton scattering. The permanent ripple patterns are frozen in after transverse thermal and material diffusion during the laser-annealing process. The model is in good agreement with time-resolved measurements of the ripple formation in 1.06−µm laser annealing of Ge. Dispersion of the ripple wavevector in the UV spectral region is discussed.

scholarly journals Low Energy Electron Diffraction During Pulsed Laser Annealing: A Time Resolved Surface Structural Study

1983 ◽  
Vol 23 ◽  
Author(s):  
R. S. Becker ◽  
G. S. Higashi ◽  
J. A. Golovchenko
Keyword(s):  
Electron Diffraction ◽  
Structural Changes ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Low Energy ◽  
Energy Electron ◽  
Time Resolved ◽  
Low Energy Electron Diffraction ◽  
Pulsed Laser Annealing ◽  
Low Energy Electron

ABSTRACTNanosecond structural changes in a crystal lattice during pulsed laser annealing have been measured using time-resolved Low Energy Electron Diffraction (LEED). LEED is both structure and surface (∼ 10Å) sensitive. Lattice temperatures can be extracted from Debye-Waller like extinction coefficients. Combining these with nanosecond time resolution provides a surface probe for short-time dynamical processes. The technique is used to observe the time evolution of a Ge(l11) surface during pulsed laser annealing. The results demonstrate rapid formation of a liquid layer and subsequent surface recrystallization and cooling.

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