Time-resolved conductance and reflectance measurements of silicon during pulsed-laser annealing

1983 ◽  
Vol 27 (2) ◽  
pp. 1079-1087 ◽  
Author(s):  
G. J. Galvin ◽  
Michael O. Thompson ◽  
J. W. Mayer ◽  
P. S. Peercy ◽  
R. B. Hammond ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Time Resolved ◽  
Pulsed Laser Annealing ◽  
Reflectance Measurements

Synchrotron X-Ray Study of the Structure of Silicon During Pulsed Laser Processing

1981 ◽  
Vol 4 ◽  
Author(s):  
B. C. Larson ◽  
C. W. White ◽  
T. S. Noggle ◽  
J. F. Barhorst ◽  
D. Mills
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Temperature Profiles ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
Near Surface ◽  
X Ray ◽  
Pulsed Laser Annealing ◽  
Pulsed Laser Processing ◽  
Thermal Melting

ABSTRACTSynchrotron x-ray pulses have been used to make nanosecond resolution time-resolved x-ray diffraction measurements on silicon during pulsed laser annealing. Thermal expansion analysis of near-surface strains during annealing has provided depth dependent temperature profiles indicating >1100°C temperatures and diffraction from boron implanted silicon has shown evidence for near-surface melting. These results are in qualitative agreement with the thermal melting model of laser annealing.

Surface Temperatures and Dissociation Loss During the Pulsed Laser Annealing of GaAs

1983 ◽  
Vol 23 ◽  
Author(s):  
John T.A. Pollock ◽  
Alex Rose
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Pressure Data ◽  
Incident Laser ◽  
Time Resolved ◽  
Dissociation Pressure ◽  
Pulsed Laser Annealing ◽  
Modelling Studies ◽  
Maximum Temperatures ◽  
Good Agreement

ABSTRACTFrom reported equilibrium partial and total dissociation pressure data for GaAs and melt times derived from reported time resolved reflectivity experiments, estimates have been made of the anticipated rate of As loss. Good agreement was found with experimentally determined As loss. A similar approach using experimentally determined Ga loss data allowed estimates of the maximum temperatures reached during pulsed laser annealing. These temperatures are considerably higher than suggested in thermal modelling studies. The boiling point of Ga gould be exceeded at incident laser energies >0.8 J cm−2.

Time-resolved optical measurement of Si lattice temperature during nanosecond pulsed laser annealing

Physica B+C ◽  
1983 ◽  
Vol 117-118 ◽  
pp. 1024-1026 ◽  
Author(s):  
Kouichi Murakami ◽  
Hisayoshi Itoh ◽  
Kōki Takita ◽  
Kohzoh Masuda
Keyword(s):  
Laser Annealing ◽  
Optical Measurement ◽  
Pulsed Laser ◽  
Lattice Temperature ◽  
Time Resolved ◽  
Pulsed Laser Annealing ◽  
Nanosecond Pulsed Laser

scholarly journals Low Energy Electron Diffraction During Pulsed Laser Annealing: A Time Resolved Surface Structural Study

1983 ◽  
Vol 23 ◽  
Author(s):  
R. S. Becker ◽  
G. S. Higashi ◽  
J. A. Golovchenko
Keyword(s):  
Electron Diffraction ◽  
Structural Changes ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Low Energy ◽  
Energy Electron ◽  
Time Resolved ◽  
Low Energy Electron Diffraction ◽  
Pulsed Laser Annealing ◽  
Low Energy Electron

ABSTRACTNanosecond structural changes in a crystal lattice during pulsed laser annealing have been measured using time-resolved Low Energy Electron Diffraction (LEED). LEED is both structure and surface (∼ 10Å) sensitive. Lattice temperatures can be extracted from Debye-Waller like extinction coefficients. Combining these with nanosecond time resolution provides a surface probe for short-time dynamical processes. The technique is used to observe the time evolution of a Ge(l11) surface during pulsed laser annealing. The results demonstrate rapid formation of a liquid layer and subsequent surface recrystallization and cooling.

A Detailed Examination of Time-Resolved Pulsed Raman Temeperature Measurements of Laser Annealed Silicon

1983 ◽  
Vol 13 ◽  
Author(s):  
G. E. Jellison ◽  
D. H. Lowndes ◽  
R. F. Wood
Keyword(s):  
Optical Properties ◽  
Pulse Width ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Detailed Examination ◽  
Temperature Gradients ◽  
Probe Laser ◽  
Time Resolved ◽  
Pulsed Laser Annealing ◽  
Anti Stokes

ABSTRACTRaman temperature measurements during pulsed laser annealing of Si by Compaan and co-workers are critically examined. It has been shown previously that the Stokes to anti-Stokes ratio depends critically upon the optical properties of silicon as a function of temperature. These dependences, coupled with the large spatial and temporal temperature gradients normally found immediately after the high reflectivity phase, result in large variations in the calculated temperature depending upon the probe laser pulse width and the pulse-to-pulse and spatial variations in the annealing pulse energy density.

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