Optical and Infrared Spectroscopy of Laser Irradiated BI Implanted SiO2 Glasses

1991 ◽  
Vol 235 ◽  
Author(s):  
R. H. Magruder ◽  
D. O. Henderson ◽  
S. H. Morgan ◽  
R. A. Zuhr
Keyword(s):  
Infrared Spectroscopy ◽  
Laser Irradiation ◽  
Extinction Coefficient ◽  
High Purity ◽  
Laser Pulses ◽  
Reflectance Spectra ◽  
Reflection Spectra ◽  
Infrared Reflection ◽  
Dose Dependent

ABSTRACTOptical and infrared reflection spectra for Bi-implanted high-purity silica are reported as a function of dose and 5eV laser irradiation. The extinction coefficient per ion and the reflectance spectra are dose dependent. Subsequent effects of laser irradiation are dependent upon Bi content and total number of laser pulses. Changes reported are attributed to two photothermal processes. One involving diffusion and desorption of Bi ions and annealing of defects, while the second is dominated by annealing.

Characterization of Thermal Annealed Bi Implanted Silica

1992 ◽  
Vol 279 ◽  
Author(s):  
S. H. Morgan ◽  
D. O. Henderson ◽  
Z. Pan ◽  
R. H. Magruder ◽  
R. A. Zuhr
Keyword(s):  
Optical Absorption ◽  
Thermal Annealing ◽  
High Purity ◽  
Reflection Spectra ◽  
Infrared Reflectance ◽  
Infrared Reflection ◽  
Before And After ◽  
Annealing Effects

ABSTRACTOptical and infrared reflection spectra for Bi implanted silica are reported as a function of dose and thermal annealing. A series of high purity silica samples were implanted with Bi ions at an energy of 350 KeV. Doses were 1 × 1016 and 1.0 × 1017ions/cm2 at 5μamps/cm2. The samples were subsequently thermally annealed at 400, 600 and 800 C. The optical absorption from 6.2 to 1.8 eV and infrared reflectance from 5000 to 450 cm”−1 were measured before and after annealing. Effects of thermal annealing are strongly dependent on Bi content.

Isotopic disorder effect in the infrared reflection spectra of 6Lix7Li1−xY F4 single crystals

2007 ◽  
Vol 142 (5) ◽  
pp. 256-260
Author(s):  
E.A. Vinogradov ◽  
V.A. Yakovlev ◽  
N.N. Novikova ◽  
M.N. Popova ◽  
S.K. Saikin ◽  
...  
Keyword(s):  
Single Crystals ◽  
Reflection Spectra ◽  
Infrared Reflection ◽  
Disorder Effect

Characterization of solid inorganic and coordination compounds by their near infrared reflection spectra

1966 ◽  
Vol 19 (10) ◽  
pp. 1785 ◽  
Author(s):  
AF Reid
Keyword(s):  
Coordination Compounds ◽  
Near Infrared ◽  
Organometallic Compounds ◽  
Reflection Spectra ◽  
Convenient Means ◽  
Infrared Reflection ◽  
Number Of Classes

The near infrared combination spectra of a number of classes of solid inorganic and coordination compounds have been recorded and assigned. The spectra are shown to be typical of particular ligands regardless of the compounds in which they are contained, and to serve as an experimentally convenient means of characterization of solid coordination or organometallic compounds.

scholarly journals DISCRIMINATION OF VARIETY AND AUTHENTICITY FOR RICE BASED ON VISUAL/NEAR INFRARED REFLECTION SPECTRA

2009 ◽  
Vol 28 (5) ◽  
pp. 353-356 ◽  
Author(s):  
Liang LIANG ◽  
Zhi-Xiao LIU ◽  
Min-Hua YANG ◽  
You-Xiang ZHANG ◽  
Cheng-Hua WANG
Keyword(s):  
Near Infrared ◽  
Reflection Spectra ◽  
Infrared Reflection

Time-Resolved X-Ray Studies During Pulsed-Laser Irradiation of Ge

1984 ◽  
Vol 35 ◽  
Author(s):  
J.Z. Tischler ◽  
B.C. Larson ◽  
D.M. Mills
Keyword(s):  
Melting Point ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Laser Pulses ◽  
High Energy ◽  
Measured Temperature ◽  
Time Resolved ◽  
Synchrotron Source ◽  
X Ray ◽  
Pulsed Laser Irradiation

ABSTRACTSynchrotron x-ray pulses from the Cornell High Energy Synchrotron Source (CHESS) have been used to carry out nanosecond resolution measurements of the temperature distrubutions in Ge during UV pulsed-laser irradiation. KrF (249 nm) laser pulses of 25 ns FWHM with an energy density of 0.6 J/cm2 were used. The temperatures were determined from x-ray Bragg profile measurements of thermal expansion induced strain on <111> oriented Ge. The data indicate the presence of a liquid-solid interface near the melting point, and large (1500-4500°C/pm) temperature gradients in the solid; these Ge results are analagous to previous ones for Si. The measured temperature distributions are compared with those obtained from heat flow calculations, and the overheating and undercooling of the interface relative to the equilibrium melting point are discussed.

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