Characterization of Thermal Annealed Bi Implanted Silica

1992 ◽  
Vol 279 ◽  
Author(s):  
S. H. Morgan ◽  
D. O. Henderson ◽  
Z. Pan ◽  
R. H. Magruder ◽  
R. A. Zuhr
Keyword(s):  
Optical Absorption ◽  
Thermal Annealing ◽  
High Purity ◽  
Reflection Spectra ◽  
Infrared Reflectance ◽  
Infrared Reflection ◽  
Before And After ◽  
Annealing Effects

ABSTRACTOptical and infrared reflection spectra for Bi implanted silica are reported as a function of dose and thermal annealing. A series of high purity silica samples were implanted with Bi ions at an energy of 350 KeV. Doses were 1 × 1016 and 1.0 × 1017ions/cm2 at 5μamps/cm2. The samples were subsequently thermally annealed at 400, 600 and 800 C. The optical absorption from 6.2 to 1.8 eV and infrared reflectance from 5000 to 450 cm”−1 were measured before and after annealing. Effects of thermal annealing are strongly dependent on Bi content.

Characterization of solid inorganic and coordination compounds by their near infrared reflection spectra

1966 ◽  
Vol 19 (10) ◽  
pp. 1785 ◽  
Author(s):  
AF Reid
Keyword(s):  
Coordination Compounds ◽  
Near Infrared ◽  
Organometallic Compounds ◽  
Reflection Spectra ◽  
Convenient Means ◽  
Infrared Reflection ◽  
Number Of Classes

The near infrared combination spectra of a number of classes of solid inorganic and coordination compounds have been recorded and assigned. The spectra are shown to be typical of particular ligands regardless of the compounds in which they are contained, and to serve as an experimentally convenient means of characterization of solid coordination or organometallic compounds.

scholarly journals Characterization of the ion-amorphization process and thermal annealing effects on third generation SiC fibers and 6H-SiC

2015 ◽  
Vol 1 ◽  
pp. 8 ◽  
Author(s):  
Juan Huguet-Garcia ◽  
Aurélien Jankowiak ◽  
Sandrine Miro ◽  
Renaud Podor ◽  
Estelle Meslin ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Third Generation ◽  
Sic Fibers ◽  
Annealing Effects

Micro-Raman Characterization of Cluster Carbon Implanted Si before and after Rapid Thermal Annealing

2016 ◽  
Vol 75 (8) ◽  
pp. 605-613
Author(s):  
W. S. Yoo ◽  
K. Kang ◽  
H. Nishigaki ◽  
N. Hasuike ◽  
H. Harima ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Before And After ◽  
Raman Characterization

Photoluminescence characterization of Cd-annealing effects on high purity CdTe single crystals

2003 ◽  
Vol 252 (1-3) ◽  
pp. 102-106 ◽  
Author(s):  
S.H. Song ◽  
J.F. Wang ◽  
G.M. Lalev ◽  
L. He ◽  
M. Isshiki
Keyword(s):  
Single Crystals ◽  
High Purity ◽  
Annealing Effects

X-ray electrono-optical and SIMS characterization of Si crystals implanted with Bi ions before and after rapid thermal annealing

1995 ◽  
Vol 30 (1) ◽  
pp. 129-133 ◽  
Author(s):  
J. Auleytner ◽  
J. Adamczewska ◽  
A. Barcz ◽  
J. Górecka ◽  
K. Regiński
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
X Ray ◽  
Before And After

Deposition of Polycrystalline ZnO Films by Two-Step Method and Characterization of Thermal Annealing Effects

2002 ◽  
Vol 720 ◽  
Author(s):  
Jin-Bock Lee ◽  
Myung-Ho Lee ◽  
Hye-Jung Lee ◽  
Jin-Seok Park
Keyword(s):  
Thermal Annealing ◽  
Texture Coefficient ◽  
Rf Magnetron Sputtering ◽  
Film Deposition ◽  
Zno Thin Films ◽  
High Resistivity ◽  
Zno Films ◽  
Step Method ◽  
Annealing Effects

AbstractPolycrystalline ZnO thin films were deposited on SiO2/Si(100) substrate using RF magnetron sputtering. The film deposition performed in this work was composed of following two procedures; the 1st-deposition for 30 min without oxygen at 100 W and the 2nd-deposition with oxygen in the range O2/(Ar+O2) = 10∼50 %. Deposited ZnO films revealed a strongly c-axis preferred-orientation (the corresponding texture coefficient ∼ 100 %) as well as a high resistivity (> 107 Ωcm). It was also observed that the crystallite size of ZnO was noticeably increased by thermal-annealing.

scholarly journals Characterization of Thermal Annealing Effects on the Evolution of Coke Carbon Structure Using Raman Spectroscopy and X-ray Diffraction

2006 ◽  
Vol 46 (8) ◽  
pp. 1165-1170 ◽  
Author(s):  
Masahiro Kawakami ◽  
Haruki Kanba ◽  
Kazunori Sato ◽  
Toshihide Takenaka ◽  
Sushil Gupta ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Thermal Annealing ◽  
X Ray Diffraction ◽  
Carbon Structure ◽  
X Ray ◽  
Annealing Effects

Optical and Infrared Spectroscopy of Laser Irradiated BI Implanted SiO2 Glasses

1991 ◽  
Vol 235 ◽  
Author(s):  
R. H. Magruder ◽  
D. O. Henderson ◽  
S. H. Morgan ◽  
R. A. Zuhr
Keyword(s):  
Infrared Spectroscopy ◽  
Laser Irradiation ◽  
Extinction Coefficient ◽  
High Purity ◽  
Laser Pulses ◽  
Reflectance Spectra ◽  
Reflection Spectra ◽  
Infrared Reflection ◽  
Dose Dependent

ABSTRACTOptical and infrared reflection spectra for Bi-implanted high-purity silica are reported as a function of dose and 5eV laser irradiation. The extinction coefficient per ion and the reflectance spectra are dose dependent. Subsequent effects of laser irradiation are dependent upon Bi content and total number of laser pulses. Changes reported are attributed to two photothermal processes. One involving diffusion and desorption of Bi ions and annealing of defects, while the second is dominated by annealing.

Computer Simulation of Thermal Annealing Effects on Self Implanted Silicon

1994 ◽  
Vol 373 ◽  
Author(s):  
G. DE Sandre ◽  
L. Colombo ◽  
D. Maric
Keyword(s):  
Molecular Dynamics ◽  
Thermal Annealing ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Tight Binding ◽  
Defect Distribution ◽  
Amorphous Network ◽  
Different Temperatures ◽  
Annealing Effects

AbstractWe investigate the effects of thermal annealing on the structural, elastic and electronic properties of self implanted silicon by tight binding molecular dynamics. The irradiated samples, after a careful relaxation at room temperature, are annealed at different temperatures and for different times and, finally, their properties are carefully monitored during constant temperature simulations. We further provide a characterization of the chemical bonding in the amorphous network and show the evolution of the point defect distribution against maximum annealing temperature.

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