Environment Sensitive Embedding Energies of Impurities, and Grain Boundary Relaxation in Iron

1991 ◽  
Vol 238 ◽  
Author(s):  
Genrich L. Krasko

ABSTRACTImpurities, such as H, P, S, B, etc, have a very low solubility in iron, and therefore prefer to segregate at the grain boundaries (GBs). In order to analyze the energetics of the impurities on the iron GB, the LMTO calculations were performed on a simple 8-atom supercel 1 emulating a typical (capped trigonal prism) GB environment. The so-called “environment-sensitive embedding energies” were calculated for H, B, C, N, O, Al, Si, P, and S, as a function of the electron charge density due to the host atoms at the impurity site. It was shown that, at the electron charge density typical of a GB, B and C have the lowest energy among the analyzed impurities, and thus would compete with them for the site on the GB, tending to push the other impurities off the GB. The above energies were then used in a modified Finnis-Sinclair embedded atom approach for calculating the equilibrium interplanar distances in the vicinity of a (111) σ3 tilt GB plane, both for the clean GB and that with an impurity. These distances were found to be oscillating, returning to the equilibrium spacing between (111) planes in bulk BCC iron by the 10th-12th plane off the GB plane. H, B, C, N and O actually dampen the deformation wave (making the oscillation amplitudes less than in the clean GB), while, Al, Si, P and S result in an increase of the oscillations. The effect of B, C, N and O may be interpreted as cohesion enhancement; this conclusion supports our earlier first-principles results [1] on B and C.

1995 ◽  
Vol 408 ◽  
Author(s):  
Genrich L. Krasko

AbstractMetalloid impurities have a very low solubility in Tantalum, and therefore prefer to segregate at the grain boundaries (GBs). In order to analyze the energetics of the impurities on the Tantalum GB, the LMTO calculations were performed on a simple 8-atom supercell emulating a typical (capped trigonal prism) GB environment. The so-called “environment-sensitive embedding energies” were calculated for Hydrogen, Boron, Carbon, Nitrogen, Oxygen, Phosphorus, and Sulphur, as a function of the electron charge density due to the host atoms at the impurity site. The calculations showed that, at the electron density typical of a GB, Carbon has the lowest energy (followed by Nitrogen and Boron) and thus would compete with the other impurities for the site on the GB, tending to displace them from the GB. The above energies were then used in a modified Finnis-Sinclair embedded atom approach for calculating the cohesive energies and the equilibrium interplanar distances in the vicinity of a (111) Σ3tilt GB plane, both for the clean GB and that with an impurity. These distances were found to oscillate, returning to the value corresponding to the equilibrium spacing between (111) planes in bulk BCC Tantalum by the 10th-12th plane off the GB. Carbon, Nitrogen and Boron somewhat dampen the deformation wave (making the oscillations less than in the clean GB), while Oxygen, Phosphorus and Sulphur result in an increase of the oscillations. The cohesive energies follow the same trend, the GB with Carbon being the most stable. Thus, Carbon, Nitrogen and Boron may be thought of as being cohesion enhancers, while Oxygen, Phosphorus and Sulphur result in decohesion effects.


2003 ◽  
Vol 17 (21) ◽  
pp. 3865-3879 ◽  
Author(s):  
A. S. Barnard ◽  
S. P. Russo ◽  
I. K. Snook

Presented here are results of ab initio Density Functional Theory (DFT) structural relaxations performed on dehydrogenated and monohydrogenated nanocrystalline diamond structures of octahedral {111} and cuboctahedral morphologies, up to approximately 2 nm in diameter. Our results in this size range show an inward transition of dehydrogenated nanodiamond clusters into carbon onion-like structures, with preferential exfoliation of the (111) surfaces, in agreement with experimental observations. However, we have found that this transition may be prevented by monohydrogenation of the surfaces. Bonding of atoms in the surface layers of the relaxed structures, and interlayer bonding has been investigated using the electron charge density.


1986 ◽  
Vol 137 (2) ◽  
pp. 441-447 ◽  
Author(s):  
U. Pietsch ◽  
V. G. Tsirelson ◽  
R. P. Ozerov

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